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Single crystal growth and $$H$$-$$T$$ phase diagram of spin-triplet superconducting UTe$$_2$$

スピン三重項超伝導体UTe$$_2$$の単結晶育成と$$H$$-$$T$$相図

酒井 宏典   

Sakai, Hironori

スピン三重項超伝導体として注目されているUTe$$_2$$における新しい単結晶育成法を考案し、その条件最適化をおこなった結果、超伝導転移温度の向上に加えて、残留抵抗率比の大幅な改善がみられた。こうして得られた純良単結晶を用いて、電気抵抗率と交流帯磁率の同時測定を行なって強磁場25Tまでの磁場($$H$$)-温度($$T$$)相図の決定を行った。

We have developed a single crystal growth method for UTe$$_2$$, which is attracting attention as a spin-triplet superconductor. With optimized growth conditions, the residual resistivity ratio has been significantly improved, in addition to an increase in superconducting transition temperature. The phase diagram of magnetic field ($$H$$)-temperature ($$T$$) up to a high magnetic field of 25 T has been determined by simultaneous measurement of electrical resistivity and AC susceptibility using a high-quality single crystal grown by this method.

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