Li(Cd,Mn)P; A New cadmium based diluted ferromagnetic semiconductor with independent spin & charge doping

Li(Cd,Mn)P; スピンと電荷のドーピングに依存しないカドミウムを基にした新しい希薄磁性半導体

Han, W.*; Chen, B. J.*; Gu, B.*; 前川 禎通*; 他14名*

Han, W.*; Chen, B. J.*; Gu, B.*; Maekawa, Sadamichi*; 14 of others*

We report a new diluted ferromagnetic semiconductor Li(Cd,Mn)P, wherein carrier is doped via excess Li while spin is doped by isovalence substitution of Mn into Cd. The extended Cd 4-orbitals lead to more itinerant characters of Li(Cd,Mn)P than that of analogous Li(Zn,Mn)P. A higher Curie temperature of 45 K than that for Li(Zn, Mn)P is obtained in Li(Cd,Mn)P polycrystalline samples by Arrott plot technique. The p-type carriers are determined by Hall effect measurements. The first principle calculations and X-ray diffraction measurements indicate that occupation of excess Li is at Cd sites rather than the interstitial site. Consequently holes are doped by excess Li substitution. More interestingly Li(Cd,Mn)P shows a very low coercive field (100 Oe) and giant negative magnetoresistance (similar to 80%) in ferromagnetic state that will benefit potential spintronics applications.