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Unique band structure of pressure induced semiconducting state in SmS characterized by $$^{33}$$S-nuclear magnetic resonance measurements

$$^{33}$$S核磁気共鳴により評価したSmSの圧力誘起半導体状態における特徴的なバンド構造

吉田 章吾*; 芳賀 芳範   ; 藤井 拓斗*; 中井 祐介*; 水戸 毅*; 他8名*

Yoshida, Shogo*; Haga, Yoshinori; Fujii, Takuto*; Nakai, Yusuke*; Mito, Takeshi*; 8 of others*

In Kondo insulators, a small energy gap evolves only at low temperatures. In this study, $$^{33}$$S-nuclear magnetic resonance measurements under high pressures are performed to clarify the electronic structure of SmS. The spin-lattice relaxation time, consisting of multiple components, was analyzed based on a periodic Anderson model with Bayesian inference, leading to a peculiar small gap state arising from strong hybridization.

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