Atomic position and the chemical state of an active Sn dopant for Sn-doped -Ga $_{2}$ O $_{3}$ (001)

Tsai, Y. H.*; Kobata, Masaaki ; Fukuda, Tatsuo ; Tanida, Hajime ; Kobayashi, Toru ; Yamashita, Yoshiyuki*

Recently, gallium oxide (Ga $_{2}$ O $_{3}$ ) has attracted much attention as an ultra-wide bandgap semiconductor with a bandgap of about 5 eV. In order to control device properties, it is important to clarify the chemical state of dopants and doping sites. X-ray absorption near edge structure (XANES) and hard X-ray photoemission spectroscopy were used to investigate the dopant sites and chemical states of Sn in Sn-doped -Ga $_{2}$ O $_{3}$ (001) samples. The results show that the chemical state of the Sn dopant is the Sn $^{4+}$ oxidation state and that the bond lengths around the Sn dopant atoms are longer due to the relaxation effect after Sn dopant insertion. Comparison of experimental and simulated XANES spectra indicates that the octahedral Ga substitution site in -Ga $_{2}$ O $_{3}$ (001) is the active site of the Sn dopant.

Language	:	English
Journal	:	Applied Physics Letters
Volume	:	124
Number	:	11
Pages	:	p.112105_1 - 112105_5
Publication Year/Month	:	2024/03
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Paper URL	:	https://doi.org/10.1063/5.0198160
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Keywords	:	dopant; chemical state; hard X-ray photoelectron spectroscopy; gallium oxide; X-ray absorption; ultra-wide bandgap semiconductor
Research Facility	:	SPring-8(大型放射光施設)
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Registration No. : AA20230908
JAEA Abstracts No. : 52000481
Paper Submission No. : 27902

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Atomic position and the chemical state of an active Sn dopant for Sn-doped -GaO(001)

Atomic position and the chemical state of an active Sn dopant for Sn-doped -Ga $_{2}$ O $_{3}$ (001)