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Atomic position and the chemical state of an active Sn dopant for Sn-doped $$beta$$-Ga$$_{2}$$O$$_{3}$$(001)

Tsai, Y. H.*; 小畠 雅明  ; 福田 竜生  ; 谷田 肇  ; 小林 徹 ; 山下 良之*

Tsai, Y. H.*; Kobata, Masaaki; Fukuda, Tatsuo; Tanida, Hajime; Kobayashi, Toru; Yamashita, Yoshiyuki*

Recently, gallium oxide (Ga$$_{2}$$O$$_{3}$$) has attracted much attention as an ultra-wide bandgap semiconductor with a bandgap of about 5 eV. In order to control device properties, it is important to clarify the chemical state of dopants and doping sites. X-ray absorption near edge structure (XANES) and hard X-ray photoemission spectroscopy were used to investigate the dopant sites and chemical states of Sn in Sn-doped $$beta$$-Ga$$_{2}$$O$$_{3}$$(001) samples. The results show that the chemical state of the Sn dopant is the Sn$$^{4+}$$ oxidation state and that the bond lengths around the Sn dopant atoms are longer due to the relaxation effect after Sn dopant insertion. Comparison of experimental and simulated XANES spectra indicates that the octahedral Ga substitution site in $$beta$$-Ga$$_{2}$$O$$_{3}$$(001) is the active site of the Sn dopant.

使用言語

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English

掲載資料名

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Applied Physics Letters

巻

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124

号

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11

ページ数

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p.112105_1 - 112105_5

発行年月

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2024/03

発表会議名

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開催年月

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開催都市

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開催国

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キーワード

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dopant; chemical state; hard X-ray photoelectron spectroscopy; gallium oxide; X-ray absorption; ultra-wide bandgap semiconductor

特許データ

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PDF

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論文URL

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https://doi.org/10.1063/5.0198160

研究データの公開先DOI

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本成果にかかわる研究データのリンクです。

使用施設

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SPring-8(大型放射光施設)

広報プレスリリース

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論文解説記事
(成果普及情報誌)

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受委託・共同研究相手機関

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Access

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- Accesses

InCites™

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パーセンタイル：0.00

分野：Physics, Applied

Altmetrics

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