Comparison between neutron bragg dip and electron backscatter diffraction images of TlBr semiconductors

Watanabe, Kenichi*; Sugai, Yusuke*; Hasegawa, Sota*; Hitomi, Keitaro*; Nogami, Mitsuhiro*; Shinohara, Takenao ; Su, Y. H. ; Parker, J. D.*; Kockelmann, W.*

Thallium bromide (TlBr) semiconductor detectors are promising candidates for high-detection-efficiency, high-energy-resolution, and room-temperature gamma-ray spectrometers. In this study, we conducted neutron Bragg dip and electron backscatter diffraction (EBSD) imaging of TlBr crystals to measure the crystal orientation distribution. We confirmed that crystal grains were continuous over a certain distance along the solidification direction for samples fabricated with the current growth procedure.

Language	:	English
Journal	:	Sensors and Materials
Volume	:	36
Number	:	1
Pages	:	p.149 - 154
Publication Year/Month	:	2024/01
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Paper URL	:	https://doi.org/10.18494/SAM4629
DOI for research data	:	Link to research data related to this paper/report.
Keywords	:	no keyword
Research Facility	:	J-PARC物質・生命科学実験施設
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InCites™	:	Percentile:76.72 Category:Instruments & Instrumentation
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Registration No. : AA20240798
JAEA Abstracts No. : 53000349
Paper Submission No. : 29143

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