Initial oxidation of Si(001) induced by translational kinetic energy of O $_{2}$ supersonic molecular beams

Yoshigoe, Akitaka ; Sano, Mutsumi; Teraoka, Yuden

no abstracts in English

Language	:	English
Journal	:	Japanese Journal of Applied Physics, Part 1
Volume	:	39
Number	:	12B
Pages	:	p.7026 - 7030
Publication Year/Month	:	2000/12
Meeting title	:	2000 International Microprocess and Nanotechnology Conference (MNC 2000)
Held date	:	2000/07
Location (city)	:	Tokyo
Location (country)	:	Japan
Patent information	:
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Paper URL	:	https://doi.org/10.1143/JJAP.39.7026
DOI for research data	:
Keywords	:	超音速O $_{2}$ 分子線; 並進運動エネルギー; Si(001)酸化; XPS; 散乱分子線; Active Oxidation; Passive Oxidation
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InCites™	:	Percentile:41.35 Category:Physics, Applied
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Registration No. : B20000022
JAEA Abstracts No. : 290291
Paper Submission No. : 17953

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Initial oxidation of Si(001) induced by translational kinetic energy of O supersonic molecular beams

Initial oxidation of Si(001) induced by translational kinetic energy of O $_{2}$ supersonic molecular beams