Enhancement of electrical activation of aluminum acceptors in 6H-SiC by co-implantation of carbon ions

Oshima, Takeshi; Ito, Hisayoshi; Yoshikawa, Masahito

no abstracts in English

Language	:	English
Journal	:	Materials Science Forum
Volume	:	353-356
Number	:
Pages	:	p.575 - 578
Publication Year/Month	:	2001/00
Meeting title	:	3rd European Conference on Silicon Carbide and Related Materials (ECSCRM-2000)
Held date	:	2000/09
Location (city)	:	Kloster Banz
Location (country)	:	Germany
Patent information	:
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DOI for research data	:
Keywords	:	シリコンカーバイド; アクセプタ不純物; イオン注入; 炭素共注入; ホール濃度
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Registration No. : B20000721
JAEA Abstracts No. : 290408
Paper Submission No. : 18045

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