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nodulesHakoyama, Tsuneo*; Oi, Ryo*; Hazuma, Kazuya*; Suga, Eri*; Adachi, Yuka*; Kobayashi, Mayumi*; Akai, Rie*; Sato, Shusei*; Fukai, Eigo*; Tabata, Satoshi*; et al.
Plant Physiology, 160(2), p.897 - 905, 2012/10
Times Cited Count：31 Percentile：66.85(Plant Sciences)
, a root regulator associated with the long-distance control of nodulation in Magori, Shimpei*; Kira, Erika*; Shibata, Satoshi*; Umehara, Yosuke*; Kochi, Hiroshi*; Hase, Yoshihiro; Tanaka, Atsushi; Sato, Shusei*; Tabata, Satoshi*; Kawaguchi, Masayoshi*
Molecular Plant-Microbe Interactions, 22(3), p.259 - 268, 2009/03
Times Cited Count：108 Percentile：92.34(Biochemistry & Molecular Biology)Legume plants tightly control the development and number of symbiotic root nodules. In , this regulation required 
in the shoots, suggesting that a long-distance communication between the shoots and the roots may exist. To better understand its molecular basis, we isolated and characterized a novel hypernodulating mutant of 
named 
(
). Reciprocal grafting with wild type showed that hypernodulation is determined by the root genotype. Moreover, grafting a 
shoot onto a rootstock did not exhibit any obvious additive effects on the nodule number. These observations indicate that a shoot factor and a root factor 
participate in the same genetic pathway which governs the long-distance signaling of nodule number control. may function downstream of and the gene product might serve as a receptor or mediator of unknown mobile signal molecules that are transported from the shoots to the roots.
(
), a novel hypernodulation mutant of affected in vascular tissue organization and floral inductionKira, Erika*; Tateno, Kumiko*; Miura, Kinichiro*; Haga, Tatsuya*; Hayashi, Masaki*; Harada, Kyuya*; Sato, Shusei*; Tabata, Satoshi*; Shikazono, Naoya; Tanaka, Atsushi; et al.
Plant Journal, 44(3), p.505 - 515, 2005/11
Times Cited Count：94 Percentile：86.42(Plant Sciences)no abstracts in English
-olefin; ; ; ; Machi, Sueo
Journal of Polymer Science; Polymer Chemistry Edition, 19, p.1525 - 1531, 1981/00
no abstracts in English
substrates implanted with Ge ionsShinagawa, Teruyoshi*; Umenyi, A. V.*; Kikuchi, Shusuke*; Aiba, Mizuki*; Inada, Kazuki*; Miura, Kenta*; Hanaizumi, Osamu*; Yamamoto, Shunya; Kawaguchi, Kazuhiro; Yoshikawa, Masahito
no journal, ,
Light emission between ultraviolet and blue from SiO substrates implanted with Ge ions in comparatively shallow depth (
100 nm) has been reported. In this paper, we report the photoluminescence (PL) properties of SiO substrates implanted with Ge ions deeper than previous works (200 nm depth) in order to enlarge the spot size of the photonic crystals waveguides. Ge ions were implanted into an SiO substrate with 350 keV, and the implantation amount was 1
10
ions/cm
. PL peaks around a wavelength of 400 nm were observed. Stronger PL peaks were measured after annealing (900 
C), which confirmed an effect of improving the emission intensity by the annealing process. Though Ge ions were implanted more deeply than the earlier reported depth, similar results were confirmed. The expectation for a new light-emitting waveguide device that combines Ge-ion-implanted SiO substrates with photonic crystal characteristics has risen.
substrate co-implanted with Si and C ionsKikuchi, Shusuke*; Umenyi, A. V.*; Inada, Kazuki*; Kawashima, Akihiro*; Noguchi, Katsuya*; Sasaki, Tomoyuki*; Miura, Kenta*; Hanaizumi, Osamu*; Yamamoto, Shunya; Kawaguchi, Kazuhiro; et al.
no journal, ,
Light emission around a wavelength (
) of 500 nm from SiO substrates implanted with Si and C ions and annealed at 1100C has been reported. In this report, we investigated photoluminescence (PL) properties of SiO substrates implanted with Si and C ions and annealed at the lower temperature of 700C. PL peaks by Si-ion implantation were observed around = 650 nm, and PL peaks by C-ion implantation were observed around = 450 nm from SiO substrates annealed at 700C. The PL peak wavelength became shorter by increasing the ratio of C to Si ions. Consequently, it was confirmed that it is possible to control the emission wavelength by the ratio of C to Si ions. Our samples showed typical light-emission though the annealing temperature was lower than the temperature reported by other groups.
Miura, Kenta*; Kikuchi, Shusuke*; Kiryu, Hiromu*; Inada, Kazuki*; Ozawa, Yusuke*; Hanaizumi, Osamu*; Yamamoto, Shunya; Sugimoto, Masaki; Yoshikawa, Masahito; Kawaguchi, Kazuhiro; et al.
no journal, ,
no abstracts in English
Miura, Kenta*; Umenyi, A. V.*; Hanaizumi, Osamu*; Sato, Takahiro; Ishii, Yasuyuki; Okubo, Takeru; Yamazaki, Akiyoshi; Koka, Masashi; Yokoyama, Akihito; Kada, Wataru; et al.
no journal, ,
no abstracts in English
Hakoyama, Tsuneo*; Oi, Ryo*; Hazuma, Kazuya*; Suga, Eri*; Adachi, Yuka*; Kobayashi, Mayumi*; Akai, Rie*; Sato, Shusei*; Fukai, Eigo*; Tabata, Satoshi*; et al.
no journal, ,
substrates implanted with Si and C ionsInada, Kazuki*; Kawashima, Akihiro*; Kano, Keisuke*; Noguchi, Katsuya*; Miura, Kenta*; Hanaizumi, Osamu*; Yamamoto, Shunya; Kawaguchi, Kazuhiro*; Yoshikawa, Masahito
no journal, ,
It is reported that Si and C ions implanted SiO substrates emit blue light. In this paper, we are studying photoluminescence (PL) properties of SiO substrates implanted with Si and C ions on various conditions. Si and C ions were implanted into an SiO substrate by using a 400-kV ion implanter at JAEA/Takasaki. The Si-ion implantation energy was 150 keV, and the implantation dose was 5.010
ions/cm. The C-ion implantation energy was 75 keV, and the implantation dose was 3.010 ions/cm. The samples were subsequently annealed at 700C for 25 min in air, after 1000C for 25 min in air. The results of PL measurements show that the PL peak wavelength became shorter by increasing the ratio of C ions to Si ions. Consequently, it was confirmed that the emission wavelength can be controlled by hanging the ratio of C and Si.
