Isolated electron spins in silicon carbide with millisecond coherence times

Christle, D.*; Falk, A.*; Andrich, A.*; Klimov, P.*; Hassan, J.*; Son, N. T.*; Janzn, E.*; 大島 武; Awschalom, D.*

Nature Materials, 14(2), p.160 - 163, 2015/02

https://doi.org/10.1038/nmat4144

Carbon vacancy - silicon vacancy pair (V-V) in silicon carbide (SiC) is regarded as a promising candidate for a qubit for quantum computing since V-V is thought to have electronic states with sharp optical and spin transitions. However, single spin operation using V-V has not yet been succeeded although it was revealed that V-V shows the characteristics as a single photon source (SPS). In this study, we studied spin properties of V-V created in SiC by 2 MeV-electron irradiation. First, we found V-V in SiC using a confocal microscope (CFM) and measured their optical detected magnet resonance (ODMR) at 20 K. Then, their spin coherence was measured from the standard two-pulse Hahn-echo sequence using ODMR. As a result, the spin coherence time exceeding 1 ms was obtained.