Enhanced charge collection in drain contact of 6H-SiC MOSFETs induced by heavy ion microbeam

小野田 忍; Vizkelethy, G.*; 牧野 高紘; 岩本 直也; 児島 一聡*; 野崎 眞次*; 大島 武

Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.230 - 233, 2010/10

Metal Oxide Semiconductor Field Effect Transistor (MOSFET) fabricated on Silicon Carbide (SiC) is regarded as a promising candidate for high-power and high-frequency electronic devices because of its excellent electrical and thermal properties. Transient currents were measured for 6H-SiC MOSFETs fabricated with three different gate oxides by using 18 MeV Oxygen and 50 MeV Cu microbeams at JAEA and Sandia National Laboratories. The 2-Dimensional Technology Computer Aided Design (TCAD) simulations were performed to clarify the mechanisms behind the transient events. According to both experiments and simulations, the typical parasitic bipolar amplification is observed when an ion strikes the drain contact. As a result of bipolar amplification, the drain current is larger than the ideal value.