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JAEA Reports

Development of a Numerical Experimentation Method for Thermal Hydraulics Design and Evaluation of High Burn-Up and Innovative Fuel Pins

Ninokata, Hisashi*; Misawa, Takeharu*; Baglietto, E.*; Aoki, Takayuki*; Sorokin, A. P.*; Maekawa, Isamu*; Ohshima, Hiroyuki; Yamaguchi, Akira

JNC TY9400 2003-010, 170 Pages, 2003/03

JNC-TY9400-2003-010.pdf:5.42MB

A method of large scale direct numerical simulation of turbulent flows in a high burn-up fuel pin bundle is proposed to evaluate wall shear stress and temperature distributions on the pin surfaces as well as detailed coolant velocity and temperature distributions inside subchannels under various thermal hydraulic conditions. This simulation is aimed at providing a tool to confirm margins to thermal hydraulics design limits of the nuclear fuels and at the same time to be used in design-by-analysis approaches. The method will facilitate thermal hydraulic design of high performance LMFR core fuels characterized by high burn-up, ultra long life, high reliable and safe performances, easiness of operation and maintenance, minimization of radio active wastes, without much relying on such empirical approach as hot spot factor and sub-factors, and above all the high cost mock up experiments. A pseudo direct numerical simulation of turbulence (DNS) code is developed, first on the Cartesian coordinates and then on the curvilinear boundary fit coordinates that enables us to reproduce thermal hydraulics phenomena in such a complicated flow channel as subchannels in a nuclear fuel pin assembly. The coordinate transformation is evaluated and demonstrated to yield correct physical quantities by carrying out computations and comparisons with experimental data with respect to the distributions of various physical quantities and turbulence statistics for fluid flow and heat transfers in various kinds of simple flow channel geometry. Then the boundary fitted pseudo DNS for flows inside an infinite pin array configuration is carried out and compared with available detailed experimental data. In parallel similar calculations are carried out using a commercial code STAR-CD to cross-check the DNS performances. As a result, the pseudo DNS showed reasonable comparisons with experiments as well as the STAR-CD results. Importance of the secondary flow influences is emphasized on the momentum a

Journal Articles

Economic scale of utilization of nuclear

Takehisa, Masaaki*; Tagawa, Seiichi*; Kashiwagi, Masayuki*; Tominaga, Hiroshi*; Ishikawa, Isamu*; Ooka, Norikazu; Kamada, Toshimitsu*; Hosobuchi, Kazunari*; Makuuchi, Keizo; Takeshita, Hidefumi; et al.

Genshiryoku Riyo No Keizai Kibo; NSA/Commentaries, No.9, 139 Pages, 2001/01

no abstracts in English

Journal Articles

Chemical effect on X-ray spectra induced by multiple inner-shell ionization, 2

Kawatsura, Kiyoshi*; Takeshima, Naoki*; Terazawa, Norihisa*; Aoki, Yasushi; Yamamoto, Shunya; Nashiyama, Isamu; Narumi, Kazumasa; Naramoto, Hiroshi

JAERI-Review 99-025, TIARA Annual Report 1998, p.188 - 190, 1999/10

no abstracts in English

Journal Articles

Chemical effect on X-ray spectra induced by multiple inner-shell ionization, 2

Kawatsura, Kiyoshi*; Takeshima, Naoki*; Terazawa, Norihisa*; Aoki, Yasushi*; Yamamoto, Shunya; Nashiyama, Isamu; Narumi, Kazumasa; Naramoto, Hiroshi

JAERI-Review 99-025, TIARA Annual Report 1998, p.188 - 190, 1999/10

no abstracts in English

Journal Articles

Oxygen-related defects in O$$^{+}$$-implanted 6H-SiC studied by monoenergetic positron beams

Uedono, Akira*; Tanigawa, Shoichiro*; Oshima, Takeshi; Ito, Hisayoshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu

Journal of Applied Physics, 86(10), p.5392 - 5398, 1999/00

 Times Cited Count:10 Percentile:46.85(Physics, Applied)

no abstracts in English

Journal Articles

$$gamma$$-ray irradiation effects on 6H-SiC MOSFET

Oshima, Takeshi; Yoshikawa, Masahito; Ito, Hisayoshi; Aoki, Yasushi; Nashiyama, Isamu

Mater. Sci. Eng. B, 61-62, p.480 - 484, 1999/00

 Times Cited Count:21 Percentile:72.79(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Generation of interface traps and oxide-trapped charge in 6H-SiC metal-oxide-semiconductor transistors by $$gamma$$-ray irradiation

Oshima, Takeshi; Yoshikawa, Masahito; Ito, Hisayoshi; Aoki, Yasushi; Nashiyama, Isamu

Japanese Journal of Applied Physics, Part 2, 37(8B), p.L1002 - L1004, 1998/08

 Times Cited Count:14 Percentile:54.49(Physics, Applied)

no abstracts in English

Journal Articles

Investigation of vacancy-type defects in P$$^{+}$$-implanted 6H-SiC using monoenergetic positron beams

Uedono, Akira*; Oshima, Takeshi; Ito, Hisayoshi; Suzuki, Ryoichi*; *; Tanigawa, Shoichiro*; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Mikado, Tomohisa*

Japanese Journal of Applied Physics, Part 1, 37(5A), p.2422 - 2429, 1998/05

 Times Cited Count:13 Percentile:54.49(Physics, Applied)

no abstracts in English

Journal Articles

Characterization of vacancy-type defects and phosphorus donors introduced in 6H-SiC by ion implantation

Oshima, Takeshi; Uedono, Akira*; Abe, Koji*; Ito, Hisayoshi; Aoki, Yasushi; Yoshikawa, Masahito; Tanigawa, Shoichiro*; Nashiyama, Isamu

Applied Physics A, 67(4), p.407 - 412, 1998/00

 Times Cited Count:26 Percentile:73.42(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Study of thermal annealing of vacancies in ion implanted 3C-SiC by positron annihilation

Oshima, Takeshi; Uedono, Akira*; Ito, Hisayoshi; Abe, Koji*; Suzuki, Ryoichi*; *; Aoki, Yasushi; Tanigawa, Shoichiro*; Yoshikawa, Masahito; Mikado, Tomohisa*; et al.

Mater. Sci. Forum, 264-268, p.745 - 748, 1998/00

no abstracts in English

Journal Articles

Hot-implantation of phosphorus ions into 6H-SiC

Abe, Koji*; Oshima, Takeshi; Ito, Hisayoshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Iwami, Motohiro*

Mater. Sci. Forum, 264-268, p.721 - 724, 1998/00

no abstracts in English

Journal Articles

Characterization of residual defects in cubic silicon carbide subjected to hot-implantation and subsequent annealing

Ito, Hisayoshi; Oshima, Takeshi; Aoki, Yasushi; Abe, Koji*; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*; Uedono, Akira*; Tanigawa, Shoichiro*

Journal of Applied Physics, 82(11), p.5339 - 5347, 1997/12

 Times Cited Count:13 Percentile:58.41(Physics, Applied)

no abstracts in English

Journal Articles

Annealing properties of defects in ion-implanted 3C-SiC studied using monoenergetic positron beams

Uedono, Akira*; Ito, Hisayoshi; Oshima, Takeshi; Suzuki, Ryoichi*; *; Tanigawa, Shoichiro*; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Mikado, Tomohisa*; et al.

Japanese Journal of Applied Physics, Part 1, 36(11), p.6650 - 6660, 1997/11

 Times Cited Count:16 Percentile:64.19(Physics, Applied)

no abstracts in English

Journal Articles

Positron annihilation studies of defects in 3C-SiC hot-implanted with nitrogen and aluminum ions

Ito, Hisayoshi; Uedono, Akira*; Oshima, Takeshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Tanigawa, Shoichiro*; Okumura, Hajime*; Yoshida, Sadafumi*

Applied Physics A, 65(3), p.315 - 323, 1997/00

 Times Cited Count:16 Percentile:64.19(Materials Science, Multidisciplinary)

no abstracts in English

Journal Articles

Defects in ion-implanted 3C-SiC probed by a monoenergetic positron beam

Uedono, Akira*; Ito, Hisayoshi; Oshima, Takeshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*; *; *; et al.

Japanese Journal of Applied Physics, Part 1, 35(12A), p.5986 - 5990, 1996/12

no abstracts in English

Journal Articles

Characterization of defects in hot-implanted 3C-SiC epitaxially grown on Si

Ito, Hisayoshi; Aoki, Yasushi; Oshima, Takeshi; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*

Silicon Carbide and Related Materials 1995 (Institute of Physics Conf. Series,No. 142), 0, p.549 - 552, 1996/00

no abstracts in English

Journal Articles

Hot-implantation of nitrogen and aluminumions into SiC semiconductor

Ito, Hisayoshi; Oshima, Takeshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*

14th Symp. on Materials Science and Engineering, Research Center of Ion Beam Technology, Hosei Univ., 0, p.147 - 150, 1995/00

no abstracts in English

Journal Articles

Characterization of defects in hot-implanted $$beta$$-SiC

Ito, Hisayoshi; Aoki, Yasushi; Yoshikawa, Masahito; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*

13th Symp. on Materials Science and Engineering, Research Center of Ion Beam Technology, Hosei Nniv., 0, p.75 - 80, 1994/12

no abstracts in English

Oral presentation

Absorption and translocation of radioactive cesium in Cypress planted trees

Hirai, Keizo*; Komatsu, Masafumi*; Akama, Akio*; Noguchi, Ryotaro*; Nagakura, Junko*; Ohashi, Shinta*; Saito, Tetsu*; Kawasaki, Tatsuro*; Yazaki, Kenichi*; Ikeda, Shigeto*; et al.

no journal, , 

no abstracts in English

19 (Records 1-19 displayed on this page)
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