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松本 貴裕*; 野又 郁実*; 大原 高志; 金光 義彦*
Physical Review Materials (Internet), 5(6), p.066003_1 - 066003_9, 2021/06
被引用回数:0 パーセンタイル:0(Materials Science, Multidisciplinary)The hydrogen isotope deuterium has attracted special interest for the manufacture of silicon (Si) semiconductors as well as for the synthesis of isotopically labeled compounds. However, the efficient production of D or H deuteride in a controlled manner is challenging, and rational H isotope enrichment protocols are still lacking. Here, we demonstrate a highly efficient exchange reaction from H to D on the surface of nanocrystalline Si. Fourfold enrichment of D termination was successfully achieved by dipping n-Si into a dilute D solution. By determining the surface-localized vibrational modes for H-and D-terminated n-Si using inelastic neutron scattering spectroscopy, we found that the physical mechanism responsible for this enrichment originates from the difference in the zero-point oscillation energies and entropies of the surface-localized vibrations.
松本 貴裕*; 鈴木 淳市; 大沼 正人*; 金満 義彦*; 舛本 泰章*
Physical Review B, 63(19), p.195322_1 - 195322_5, 2001/05
被引用回数:57 パーセンタイル:89.88(Materials Science, Multidisciplinary)ナノクリスタルシリコンの光吸収スペクトルを光透過法,吸収法,小角散乱法により決定した。その結果、ナノシリコンは、量子サイズ効果を持つ間接遷移型の半導体であることが示された。また、小角散乱によりバンドの広がりがナノシリコンサイズの1.6乗に比例することを明らかにした。