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Zhang, A.*; Deng, K.*; Sheng, J.*; Liu, P.*; Kumar, S.*; Shimada, Kenya*; Jiang, Z.*; Liu, Z.*; Shen, D.*; Li, J.*; et al.
Chinese Physics Letters, 40(12), p.126101_1 - 126101_8, 2023/12
Times Cited Count:1 Percentile:0(Physics, Multidisciplinary)Ao, N.*; Zhang, H.*; Xu, H. H.*; Wu, S. C.*; Liu, D.*; Xu, P. G.; Su, Y. H.; Kang, Q. H.*; Kang, G. Z.*
Engineering Fracture Mechanics, 281, p.109166_1 - 109166_14, 2023/03
Times Cited Count:4 Percentile:85.05(Mechanics)Huang, H.*; Zhang, W. Q.*; Andreyev, A. N.; Liu, Z.*; Seweryniak, D.*; Li, Z. H.*; Guo, C. Y.*; Barzakh, A. E.*; Van Duppen, P.*; Andel, B.*; et al.
Physics Letters B, 833, p.137345_1 - 137345_8, 2022/10
Times Cited Count:0 Percentile:0.02(Astronomy & Astrophysics)Zhang, W. Q.*; Andreyev, A. N.; Liu, Z.*; Seweryniak, D.*; Huang, H.*; 37 of others*
Physical Review C, 106(2), p.024317_1 - 024317_11, 2022/08
Times Cited Count:1 Percentile:33.4(Physics, Nuclear)Zhang, W. Q.*; Andreyev, A. N.; Liu, Z.*; Seweryniak, D.*; Huang, H.*; Li, Z. H.*; Li, J. G.*; Guo, C. Y.*; 34 of others*
Physics Letters B, 829, p.137129_1 - 137129_7, 2022/06
Times Cited Count:4 Percentile:76.34(Astronomy & Astrophysics)Yan, S. Q.*; Li, X. Y.*; Nishio, Katsuhisa; Lugaro, M.*; Li, Z. H.*; Makii, Hiroyuki; Pignatari, M.*; Wang, Y. B.*; Orlandi, R.; Hirose, Kentaro; et al.
Astrophysical Journal, 919(2), p.84_1 - 84_7, 2021/10
Times Cited Count:1 Percentile:8.87(Astronomy & Astrophysics)Lai, W.-H.*; Wang, H.*; Zheng, L.*; Jiang, Q.*; Yan, Z.-C.*; Wang, L.*; Yoshikawa, Hirofumi*; Matsumura, Daiju; Sun, Q.*; Wang, Y.-X.*; et al.
Angewandte Chemie; International Edition, 59(49), p.22171 - 22178, 2020/12
Times Cited Count:77 Percentile:95.81(Chemistry, Multidisciplinary)Sun, M. D.*; Liu, Z.*; Huang, T. H.*; Zhang, W. Q.*; Andreyev, A. N.; Ding, B.*; Wang, J. G.*; Liu, X. Y.*; Lu, H. Y.*; Hou, D. S.*; et al.
Physics Letters B, 800, p.135096_1 - 135096_5, 2020/01
Times Cited Count:11 Percentile:79.42(Astronomy & Astrophysics)Tang, C.*; Song, Q.*; Chang, C.-Z.*; Xu, Y.*; Onuma, Yuichi; Matsuo, Mamoru*; Liu, Y.*; Yuan, W.*; Yao, Y.*; Moodera, J. S.*; et al.
Science Advances (Internet), 4(6), p.eaas8660_1 - eaas8660_6, 2018/06
Times Cited Count:30 Percentile:84.42(Multidisciplinary Sciences)Lin, J. Q.*; Liu, X.*; Blackburn, E.*; Wakimoto, Shuichi; Ding, H.*; Islam, Z.*; Sinha, S. K.*
Physical Review Letters, 120(19), p.197001_1 - 197001_6, 2018/05
Times Cited Count:3 Percentile:29.25(Physics, Multidisciplinary)The nanometer scale lattice deformation brought about by the dopants in the high temperature superconducting cuprate LaSrCuO was investigated by measuring the associated X-ray diffuse scattering around multiple Bragg peaks. Our results address the long-term concern of dopant introduced local lattice inhomogeneity, and show that the associated nanometer scale lattice deformation is marginal and cannot be responsible for the patched variation in the spectral gaps observed with scanning tunneling microscopy in the cuprates.
Yan, S. Q.*; Li, Z. H.*; Wang, Y. B.*; Nishio, Katsuhisa; Lugaro, M.*; Karakas, A. I.*; Makii, Hiroyuki; Mohr, P.*; Su, J.*; Li, Y. J.*; et al.
Astrophysical Journal, 848(2), p.98_1 - 98_8, 2017/10
Times Cited Count:5 Percentile:21.48(Astronomy & Astrophysics)Yan, S. Q.*; Li, Z. H.*; Wang, Y. B.*; Nishio, Katsuhisa; Makii, Hiroyuki; Su, J.*; Li, Y. J.*; Nishinaka, Ichiro; Hirose, Kentaro; Han, Y. L.*; et al.
Physical Review C, 94(1), p.015804_1 - 015804_5, 2016/07
Times Cited Count:6 Percentile:44.49(Physics, Nuclear)Li, X. F.*; Chen, Z. Q.*; Liu, C.*; Zhang, H.; Kawasuso, Atsuo
Journal of Applied Physics, 117(8), p.085706_1 - 085706_6, 2015/02
Times Cited Count:23 Percentile:68.13(Physics, Applied)Vacancy-type defects in C-implanted GaN were probed using a slow positron beam. The increase of Doppler broadening S parameter indicates introduction of arge vacancy clusters. Post-implantation annealing at temperatures up to 800C makes these vacancy clusters to agglomerate into microvoids. The vacancy clusters or microvoids show high thermal stability, and they are only partially removed after annealing up to 1000C. Amorphous regions are observed by high resolution transmission electron microscopy measurement, which directly confirms that amorphization is induced by C-implantation. The disordered GaN lattice is possibly due to special feature of carbon impurities, which enhance the damage buildup during implantation.
Matsunaga, Go; Okabayashi, Michio*; Aiba, Nobuyuki; Boedo, J. A.*; Ferron, J. R.*; Hanson, J. M.*; Hao, G. Z.*; Heidbrink, W. W.*; Holcomb, C. T.*; In, Y.*; et al.
Nuclear Fusion, 53(12), p.123022_1 - 123022_13, 2013/12
Times Cited Count:6 Percentile:26.2(Physics, Fluids & Plasmas)Deng, Z.*; Zhao, K.*; Gu, B.; Han, W.*; Zhu, J. L.*; Wang, X. C.*; Li, X.*; Liu, Q. Q.*; Yu, R. C.*; Goko, Tatsuo*; et al.
Physical Review B, 88(8), p.081203_1 - 081203_5, 2013/08
Times Cited Count:73 Percentile:91.83(Materials Science, Multidisciplinary)Annadi, A.*; Zhang, Q.*; Renshaw Wang, X.*; Tuzla, N.*; Gopinadhan, K.*; L, W. M.*; Roy Barman, A.*; Liu, Z. Q.*; Srivastava, A.*; Saha, S.*; et al.
Nature Communications (Internet), 4, p.1838_1 - 1838_7, 2013/05
Times Cited Count:97 Percentile:94.65(Multidisciplinary Sciences)Matsunaga, Go; Okabayashi, Michio*; Aiba, Nobuyuki; Boedo, J. A.*; Ferron, J. R.*; Hanson, J. M.*; Hao, G. Z.*; Heidbrink, W. W.*; Holcomb, C. T.*; In, Y.*; et al.
Proceedings of 24th IAEA Fusion Energy Conference (FEC 2012) (CD-ROM), 8 Pages, 2013/03
Deng, Z.*; Jin, C. Q.*; Liu, Q. Q.*; Wang, X. C.*; Zhu, J. L.*; Feng, S. M.*; Chen, L. C.*; Yu, R. C.*; Arguello, C.*; Goko, Tatsuo*; et al.
Nature Communications (Internet), 2, p.1425_1 - 1425_5, 2011/08
Times Cited Count:158 Percentile:93.74(Multidisciplinary Sciences)In a prototypical ferromagnet (Ga,Mn)As based on a III-V semiconductor, substitution of divalent Mn atoms into trivalent Ga sites leads to severely limited chemical solubility and metastable specimens available only as thin films. The doping of hole carriers via (Ga,Mn) substitution also prohibits electron doping. To overcome these difficulties, Masek et al. theoretically proposed systems based on a I-II-V semiconductor LiZnAs, where isovalent (Zn,Mn) substitution is decoupled from carrier doping with excess/deficient Li concentrations. Here we show successful synthesis of Li(ZnMn)As in bulk materials. We reported that ferromagnetism with a critical temperature of up to 50 K is observed in nominally Li-excess compounds, which have p-type carriers.
Chen, L.-M.; Kotaki, Hideyuki; Nakajima, Kazuhisa*; Koga, J. K.; Bulanov, S. V.; Tajima, Toshiki; Gu, Y. Q.*; Peng, H. S.*; Wang, X. X.*; Wen, T. S.*; et al.
Physics of Plasmas, 14(4), p.040703_1 - 040703_4, 2007/04
Times Cited Count:36 Percentile:75.52(Physics, Fluids & Plasmas)An experiment for the laser self-guiding studies has been carried out with 100 TW laser pulse interaction with the long underdense plasma. Formation of extremely long plasma channel with its length, about 10 mm, 20 times above the Rayleigh length is observed. The self-focusing channel features such as the laser pulse significant bending and the electron cavity formation are demonstrated experimentally for the first time.
Xu, M. H.*; Chen, L.-M.; Li, Y.-T.*; Yuan, X.-H.*; Liu, Y.-Q.*; Nakajima, Kazuhisa; Tajima, Toshiki; Wang, Z.-H.*; Wei, Z.-Y.*; Zhao, W.*; et al.
Acta Physica Sinica, 56(1), p.353 - 358, 2007/01
Times Cited Count:5 Percentile:37.28(Physics, Multidisciplinary)The characteristics of X-ray sources generated by p-polarized femtosecond laser-solid interactions are experimentally studied in the relativistic regime. By use of knife-edge image technique and a single-photon-counting X-ray CCD camera, we obtain the source size, the spectrum and the conversion efficiency of the X-ray sources. The experimental results show that the conversion efficiency of photons reaches an optimum value 7.0810/sr at the laser intensity of 1.610W/cm, which is different from the Reich's simulation results. We find that about 10% of laser energy is converted into the forward hot electrons at the laser intensity of 1.610W/cm.
Matsunaga, Go; Okabayashi, Michio*; Aiba, Nobuyuki; Boedo, J. A.*; Ferron, J. R.*; Hanson, J. M.*; Hao, G. Z.*; Heidbrink, W. W.*; Holcomb, C. T.*; In, Y.*; et al.
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no abstracts in English