Molecular analysis of heavy ion induced mutations in budding yeast

Matsuo, Yoichiro*; Izumi, Yoshinobu*; Hase, Yoshihiro; Sakamoto, Ayako; Nozawa, Shigeki; Narumi, Issey*; Shimizu, Kikuo*

JAEA-Review 2013-059, JAEA Takasaki Annual Report 2012, P. 112, 2014/03

Breakdown voltage in silicon carbide metal-oxide-semiconductor devices induced by ion beams

Oshima, Takeshi; Deki, Manato; Makino, Takahiro; Iwamoto, Naoya; Onoda, Shinobu; Hirao, Toshio*; Kojima, Kazutoshi*; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*

AIP Conference Proceedings 1525, p.654 - 658, 2013/04

https://doi.org/10.1063/1.4802408

Metal-Oxide-Semiconductor (MOS) capacitors were fabricated on n-type 4H-SiC epitaxial layers, and the leakage current through the gate oxide during heavy ion irradiation was investigated in order to evaluate dielectric breakdown induced by heavy ions (Single Event Gate Rupture: SEGR). The gate oxide at thickness ranges between 60 and 80 nm was formed using pyrogenic oxidation at 1100 C for 60 min. Circular electrodes with 180 diameter were formed using Al evaporation and a lift-off technique. The leakage current observed through the gate oxide was monitored during 18 MeV oxygen (O) or nickel (Ni) ions. As a result, although no significant difference in the value of the electric field at the dielectric breakdown (around 8.2 MV/cm) was observed between non-irradiated and 18 MeV-O irradiated samples, the value decreased to be 7.3 MV/cm in the case of 18 MeV-Ni ion incidence. The Linier Energy Transfer (LET) for 18 MeV-O is 7 MeV cm/mg, and this value is smaller than that for 18 MeV-Ni (24 MeV cm/mg). Also, 18 MeV-Ni ions deposit energy in narrower regions than 18 MeV-O ions. Thus, it can be concluded that the high density of charge induced by 18 MeV-Ni ions triggers SEGR in SiC MOS capacitors.

DNA damage evaluation system of the high-LET ion beam using the polymerase chain reaction

Matsuo, Yoichiro*; Izumi, Yoshinobu*; Hase, Yoshihiro; Sakamoto, Ayako; Nozawa, Shigeki; Narumi, Issei; Shimizu, Kikuo*

JAEA-Review 2012-046, JAEA Takasaki Annual Report 2011, P. 105, 2013/01

https://jopss.jaea.go.jp/pdfdata/JAEA-Review-2012-046.pdf

Fundamental study on molecular mechanism underlying repair of heavy-ion induced DNA damage in the

Matsuo, Yoichiro*; Izumi, Yoshinobu*; Hase, Yoshihiro; Sakamoto, Ayako; Nozawa, Shigeki; Narumi, Issei; Shimizu, Kikuo*

JAEA-Review 2011-043, JAEA Takasaki Annual Report 2010, P. 108, 2012/01

https://jopss.jaea.go.jp/pdfdata/JAEA-Review-2011-043.pdf

Thermoelectric response in the incoherent transport region near Mott transition; The Case study of LaSrVO

Uchida, Masaki*; Oishi, Koji*; Matsuo, Mari; Koshibae, Wataru*; Onose, Yoshinori*; Mori, Michiyasu; Fujioka, Jun*; Miyasaka, Shigeki*; Maekawa, Sadamichi; Tokura, Yoshinori*

Physical Review B, 83(16), p.165127_1 - 165127_5, 2011/04

https://doi.org/10.1103/PhysRevB.83.165127

Effects of heavy ion beam irradiation in citrus

Matsuo, Yoichi*; Hase, Yoshihiro; Nozawa, Shigeki; Yoshihara, Ryohei; Narumi, Issei

JAEA-Review 2010-065, JAEA Takasaki Annual Report 2009, P. 66, 2011/01

https://jopss.jaea.go.jp/pdfdata/JAEA-Review-2010-065.pdf

no abstracts in English

Laser modification aiming at the enhancement of local electrical conductivities in SiC

Deki, Manato; Ito, Takuto*; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Kitada, Takahiro*; Isu, Toshiro*; Onoda, Shinobu; Oshima, Takeshi

Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9), p.218 - 221, 2010/10

Molecular analysis of carbon ion induced mutations in the yeast and mutants

Matsuo, Yoichiro*; Nishijima, Shigehiro*; Hase, Yoshihiro; Nozawa, Shigeki; Sakamoto, Ayako; Narumi, Issei; Shimizu, Kikuo*

JAEA-Review 2009-041, JAEA Takasaki Annual Report 2008, P. 75, 2009/12

https://jopss.jaea.go.jp/pdfdata/JAEA-Review-2009-041.pdf

no abstracts in English

Induction of thornless Yuzu mutant by heavy ion beam irradiation

Matsuo, Yoichi*; Hase, Yoshihiro; Nozawa, Shigeki; Yoshihara, Ryohei; Yokota, Yuichiro; Narumi, Issei; Oyabu, Eiko*

no journal, , 

no abstracts in English

Femtosecond laser modification aiming at the enhancement of local electric conductivities on SiC

Deki, Manato; Yamamoto, Minoru*; Ito, Takuto*; Tomita, Takuro*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Kitada, Takahiro*; Isu, Toshiro*; Onoda, Shinobu; Oshima, Takeshi

no journal, , 

no abstracts in English