Thermally altered subsurface material of asteroid (162173) Ryugu

Kitazato, Kohei*; Milliken, R. E.*; Iwata, Takahiro*; Abe, Masanao*; Otake, Makiko*; Matsuura, Shuji*; Takagi, Yasuhiko*; Nakamura, Tomoki*; Hiroi, Takahiro*; Matsuoka, Moe*; et al.

Nature Astronomy (Internet), 5(3), p.246 - 250, 2021/03

https://doi.org/10.1038/s41550-020-01271-2

Here we report observations of Ryugu's subsurface material by the Near-Infrared Spectrometer (NIRS3) on the Hayabusa2 spacecraft. Reflectance spectra of excavated material exhibit a hydroxyl (OH) absorption feature that is slightly stronger and peak-shifted compared with that observed for the surface, indicating that space weathering and/or radiative heating have caused subtle spectral changes in the uppermost surface. However, the strength and shape of the OH feature still suggests that the subsurface material experienced heating above 300 C, similar to the surface. In contrast, thermophysical modeling indicates that radiative heating does not increase the temperature above 200 C at the estimated excavation depth of 1 m, even if the semimajor axis is reduced to 0.344 au. This supports the hypothesis that primary thermal alteration occurred due to radiogenic and/or impact heating on Ryugu's parent body.

Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment

Yamada, Takahiro*; Watanabe, Kenta*; Nozaki, Mikito*; Shih, H.-A.*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

Japanese Journal of Applied Physics, 57(6S3), p.06KA07_1 - 06KA07_6, 2018/06

https://doi.org/10.7567/JJAP.57.06KA07

Thermal oxidation of AlGaN surface and its impact on the electrical properties of AlGaN/GaN MOS capacitors were investigated by means of synchrotron radiation photoelectron spectroscopy (SR-PES), atomic force microscopy (AFM) and C-V measurements. SR-PES analysis revealed that the AlGaN surface is oxidized even at low temperature of 400C, in contrast to no oxide formation on GaN surface. However, since no noticeable change in the surface morphology was observed at temperatures up to 800C, it can be concluded that an ultrathin oxide overlayer is formed on the AlGaN surface. On the other hand, for the oxidation treatments above 850C, the formation of small oxide grains was observed over the entire area of the AlGaN surface, and the growth of oxide grains significantly degraded the surface morphology. Therefore, the AlGaN/GaN MOS capacitors were fabricated on the AlGaN surface oxidized at moderate temperatures up to 800C. While we have confirmed that relatively good interface properties are obtained for direct AlON deposition without oxidation treatment, it was found that the oxidation treatment at 400C leads to further improvement of interface properties and reduction of C-V hysteresis.

Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties

Nozaki, Mikito*; Watanabe, Kenta*; Yamada, Takahiro*; Shih, H.-A.*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

Japanese Journal of Applied Physics, 57(6S3), p.06KA02_1 - 06KA02_7, 2018/06

https://doi.org/10.7567/JJAP.57.06KA02

We fabricated AlON dielectric films by repeating thin AlN deposition and in situ O oxidation for AlGaN/GaN MOS-HFETs. Uniform nitrogen distribution is achievable by the proposed ALD-based process and that nitrogen concentration can be precisely controlled by changing AlN thickness (ALD cycle number) in each step. It was found that AlON films grown by ALD system offers significant advantages in terms of practical application while keeping superior Vth stability and electrical properties at the insulator/AlGaN interface in AlGaN/GaN MOS-HFETs.

Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

Yamada, Takahiro*; Ito, Joyo*; Asahara, Ryohei*; Watanabe, Kenta*; Nozaki, Mikito*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; et al.

Journal of Applied Physics, 121(3), p.035303_1 - 035303_9, 2017/01

https://doi.org/10.1063/1.4974458

Initial oxidation of GaN(0001) epilayers and subsequent growth of thermal oxides in dry oxygen ambient were investigated by means of X-ray photoelectron spectroscopy, spectroscopic ellipsometry, atomic force microscopy and X-ray diffraction measurements. It was found that, whereas initial oxide formation tends to saturate at temperatures below 800C, selective growth of small oxide grains proceeds at dislocations in the epilayers, followed by noticeable grain growth leading to rough surface morphology at higher oxidation temperatures. This indicates that oxide growth and its morphology are crucially dependent on the defect density in the GaN epilayers. Structural characterizations also revealed that polycrystalline - and -phase GaO grains in an epitaxial relation with the GaN substrate are formed from the initial stage of the oxide growth. On the basis of these experimental findings, we also developed a comprehensive model for GaN oxidation mediated by nitrogen removal and mass transport.

Synchrotron radiation X-ray photoelectron spectroscopy of Ti/Al ohmic contacts to n-type GaN; Key role of Al capping layers in interface scavenging reactions

Nozaki, Mikito*; Ito, Joyo*; Asahara, Ryohei*; Nakazawa, Satoshi*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Applied Physics Express, 9(10), p.105801_1 - 105801_4, 2016/10

https://doi.org/10.7567/APEX.9.105801

Interface reactions between Ti-based electrodes and n-type GaN epilayers were investigated by synchrotron radiation X-ray photoelectron spectroscopy. Metallic Ga and thin TiN alloys were formed at the interface by subsequently depositing Al capping layers on ultrathin Ti layers even at room temperature. By comparing results from stacked Ti/Al and single Ti electrodes, the essential role of Al capping layers serving as an oxygen-scavenging element to produce reactive Ti underlayers was demonstrated. Further growth of the metallic interlayer during annealing was observed. A strategy for achieving low-resistance ohmic contacts to n-GaN with low-thermal-budget processing is discussed.

Influence of heat treatment on long term creep properties of 9Cr-W-Mo-V-Nb steel

Obara, Satoshi; Wakai, Takashi; Asayama, Tai; Yamada, Yoshiyuki*; Nakazawa, Takanori*; Yamazaki, Masayoshi*; Hongo, Hiromichi*

Tetsu To Hagane, 96(4), p.172 - 181, 2010/04

https://doi.org/10.2355/tetsutohagane.96.172

This paper describes the effect of heat treatment on mechanical properties of 9Cr-W-Mo-V-Nb steel as a part of development of high Cr steel for fast breeder reactor (FBR). The effects of normalizing temperature and tempering temperature and time on creep properties were investigated from the viewpoint of microstructures. Creep strength increased with increase in normalizing temperature from 950C to 1200C. The microstructural factors that improve creep strength are increased amount of MX which precipitated during tempering process and increased dislocation density. In addition, coarsening of prior austenite grain size also contribute to increasing creep strength. Although creep rupture time of 780C-1h tempering specimen was greater than that of 700C-1h and 750C-1h tempering specimen in a long-term region exceeding 20000h at 650C, creep ductility and reduction of area of the former remarkably degraded compared to those of the latter.

Test plans of the high temperature test operation at HTTR

Sakaba, Nariaki; Nakagawa, Shigeaki; Takada, Eiji*; Nojiri, Naoki; Shimakawa, Satoshi; Ueta, Shohei; Sawa, Kazuhiro; Fujimoto, Nozomu; Nakazawa, Toshio; Ashikagaya, Yoshinobu; et al.

JAERI-Tech 2003-043, 59 Pages, 2003/03

JAERI-Tech-2003-043.pdf:2.54MB

HTTR plans a high temperature test operation as the fifth step of the rise-to-power tests to achieve a reactor outlet coolant temperature of 950 degrees centigrade in the 2003 fiscal year. Since HTTR is the first HTGR in Japan which uses coated particle fuel as its fuel and helium gas as its coolant, it is necessary that the plan of the high temperature test operation is based on the previous rise-to-power tests with a thermal power of 30 MW and a reactor outlet coolant temperature at 850 degrees centigrade. During the high temperature test operation, reactor characteristics, reactor performances and reactor operations are confirmed for the safety and stability of operations. This report describes the evaluation result of the safety confirmations of the fuel, the control rods and the intermediate heat exchanger for the high temperature test operation. Also, problems which were identified during the previous operations are shown with their solution methods. Additionally, there is a discussion on the contents of the high temperature test operation. As a result of this study, it is shown that the HTTR can safely achieve a thermal power of 30MW with the reactor outlet coolant temperature at 950 degrees centigrade.

JENDL Dosimetry File 99 (JENDL/D-99)

Kobayashi, Katsuhei*; Iguchi, Tetsuo*; Iwasaki, Shin*; Aoyama, Takafumi*; Shimakawa, Satoshi; Ikeda, Yujiro; Odano, Naoteru; Sakurai, Kiyoshi; Shibata, Keiichi; Nakagawa, Tsuneo; et al.

JAERI 1344, 133 Pages, 2002/01

JAERI-1344.pdf:7.59MB

The JENDL Dosimetry File 99 (JENDL/D-99) has been prepared for determinations of neutron flux/fluence and energy spectrum at specific neutron fields. This file contains data for 67 reactions with 47 nuclides. Cross sections for 33 major dosimetry reactions and their covariance data were simultaneously generated and the other 34 reaction data were mainly adopted from the first version, JENDL/D-91. The GMA code was mainly used for most of the evaluation procedures by referring the basic experimental data in EXFOR. The resultant data are given in the neutron energy region below 20 MeV in both of point-wise and group-wise files in the ENDF-6 format. In order to confirm reliability of the data, several integral tests have been carried out: comparison with the data in IRDF-90V2 and average cross sections measured in fission neutron fields, fast/thermal reactor spectra, DT neutron fields and Li(d,n) neutron fields. The contents of JENDL/D-99 and the results of the integral tests are described in this report. All of the dosimetry cross sections are shown in a graphical form in the Appendix.

Ion Bernstein wave experiment on JFT-2M tokamak

Tamai, Hiroshi; Ogawa, Toshihide; Matsumoto, Hiroshi; Odajima, Kazuo; ; Hoshino, Katsumichi; Kasai, Satoshi; Kawakami, Tomohide; Kawashima, Hisato; Kondoh, Takashi; et al.

Japanese Journal of Applied Physics, 29(10), p.L1911 - L1914, 1990/10

https://doi.org/10.1143/JJAP.29.L1911

no abstracts in English

Observation of H-mode by edge heating solely by electron cyclotron heating in a divertor configuration of JFT-2M tokamak

Hoshino, Katsumichi; Yamamoto, Takumi; Kawashima, Hisato; Suzuki, Norio; Uesugi, Yoshihiko; ; Kasai, Satoshi; Kawakami, Tomohide; Matsuda, Toshiaki; Miura, Yukitoshi; et al.

JAERI-M 89-038, 7 Pages, 1989/03

JAERI-M-89-038.pdf:0.29MB

no abstracts in English