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Journal Articles

SiO$$_{2}$$/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

Watanabe, Kenta*; Terashima, Daiki*; Nozaki, Mikito*; Yamada, Takahiro*; Nakazawa, Satoshi*; Ishida, Masahiro*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; et al.

Japanese Journal of Applied Physics, 57(6S3), p.06KA03_1 - 06KA03_6, 2018/06

 Times Cited Count:4 Percentile:32.09(Physics, Applied)

The advantage of SiO$$_{2}$$/AlON stacked gate dielectrics over SiO$$_{2}$$, AlON and Al$$_{2}$$O$$_{3}$$ single dielectric layers was demonstrated. Our systematic research revealed that the optimized stacked structure with 3.3-nm-thick AlON interlayer is beneficial in terms of superior interface quality, reduced gate leakage current and C-V hysteresis for next-generation high frequency and high power AlGaN/GaN MOS-HFETs.

Journal Articles

Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties

Nozaki, Mikito*; Watanabe, Kenta*; Yamada, Takahiro*; Shih, H.-A.*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

Japanese Journal of Applied Physics, 57(6S3), p.06KA02_1 - 06KA02_7, 2018/06

 Times Cited Count:4 Percentile:32.09(Physics, Applied)

We fabricated AlON dielectric films by repeating thin AlN deposition and in situ O$$_{3}$$ oxidation for AlGaN/GaN MOS-HFETs. Uniform nitrogen distribution is achievable by the proposed ALD-based process and that nitrogen concentration can be precisely controlled by changing AlN thickness (ALD cycle number) in each step. It was found that AlON films grown by ALD system offers significant advantages in terms of practical application while keeping superior Vth stability and electrical properties at the insulator/AlGaN interface in AlGaN/GaN MOS-HFETs.

Journal Articles

Design and control of interface reaction between Al-based dielectrics and AlGaN Layer in AlGaN/GaN metal-oxide-semiconductor structures

Watanabe, Kenta*; Nozaki, Mikito*; Yamada, Takahiro*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

Applied Physics Letters, 111(4), p.042102_1 - 042102_5, 2017/07

 Times Cited Count:10 Percentile:22.28(Physics, Applied)

AlGaN/GaN HFET (hetero-junction field-effect transitor) has gained much attention as next-generation high frequency and high power devices. In this study, we systematically investigated the interface reaction between Al-based dielectrics (Al$$_{2}$$O$$_{3}$$ and AlON) and AlGaN layer during deposition and post-deposition annealing (PDA), and revealed high thermal stability of AlON/AlGaN interface.

Journal Articles

Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

Yamada, Takahiro*; Ito, Joyo*; Asahara, Ryohei*; Watanabe, Kenta*; Nozaki, Mikito*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; et al.

Journal of Applied Physics, 121(3), p.035303_1 - 035303_9, 2017/01

 Times Cited Count:28 Percentile:5.61(Physics, Applied)

Initial oxidation of GaN(0001) epilayers and subsequent growth of thermal oxides in dry oxygen ambient were investigated by means of X-ray photoelectron spectroscopy, spectroscopic ellipsometry, atomic force microscopy and X-ray diffraction measurements. It was found that, whereas initial oxide formation tends to saturate at temperatures below 800$$^{circ}$$C, selective growth of small oxide grains proceeds at dislocations in the epilayers, followed by noticeable grain growth leading to rough surface morphology at higher oxidation temperatures. This indicates that oxide growth and its morphology are crucially dependent on the defect density in the GaN epilayers. Structural characterizations also revealed that polycrystalline $$alpha$$- and $$beta$$-phase Ga$$_{2}$$O$$_{3}$$ grains in an epitaxial relation with the GaN substrate are formed from the initial stage of the oxide growth. On the basis of these experimental findings, we also developed a comprehensive model for GaN oxidation mediated by nitrogen removal and mass transport.

Journal Articles

Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal-oxide-semiconductor structures

Asahara, Ryohei*; Nozaki, Mikito*; Yamada, Takahiro*; Ito, Joyo*; Nakazawa, Satoshi*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

Applied Physics Express, 9(10), p.101002_1 - 101002_4, 2016/10

 Times Cited Count:21 Percentile:15.16(Physics, Applied)

The superior physical and electrical properties of AlON gate dielectrics on AlGaN/GaN substrates in terms of thermal stability, reliability, and interface quality were demonstrated by direct AlON deposition and subsequent annealing. Nitrogen incorporation into alumina was proven to be beneficial both for suppressing intermixing at the insulator/AlGaN interface and reducing the number of electrical defects in Al$$_{2}$$O$$_{3}$$ films. Consequently, we achieved high-quality AlON/AlGaN/GaN metal-oxide-semiconductor capacitors with improved stability against charge injection and a reduced interface state density as low as 1.2$$times$$10$$^{11}$$ cm$$^{-2}$$eV$$^{-1}$$. The impact of nitrogen incorporation into the insulator was discussed on the basis of experimental findings.

Journal Articles

Synchrotron radiation X-ray photoelectron spectroscopy of Ti/Al ohmic contacts to n-type GaN; Key role of Al capping layers in interface scavenging reactions

Nozaki, Mikito*; Ito, Joyo*; Asahara, Ryohei*; Nakazawa, Satoshi*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Applied Physics Express, 9(10), p.105801_1 - 105801_4, 2016/10

 Times Cited Count:4 Percentile:62.06(Physics, Applied)

Interface reactions between Ti-based electrodes and n-type GaN epilayers were investigated by synchrotron radiation X-ray photoelectron spectroscopy. Metallic Ga and thin TiN alloys were formed at the interface by subsequently depositing Al capping layers on ultrathin Ti layers even at room temperature. By comparing results from stacked Ti/Al and single Ti electrodes, the essential role of Al capping layers serving as an oxygen-scavenging element to produce reactive Ti underlayers was demonstrated. Further growth of the metallic interlayer during annealing was observed. A strategy for achieving low-resistance ohmic contacts to n-GaN with low-thermal-budget processing is discussed.

JAEA Reports

Maintenance of used components in spallation neutron source; Moderator $$cdot$$ reflector and proton beam window

Teshigawara, Makoto; Kinoshita, Hidetaka; Wakui, Takashi; Meigo, Shinichiro; Seki, Masakazu; Harada, Masahide; Ito, Manabu; Suzuki, Toru; Ikezaki, Kiyomi; Maekawa, Fujio; et al.

JAEA-Technology 2012-024, 303 Pages, 2012/07

JAEA-Technology-2012-024.pdf:46.04MB

3 GeV Protons with 1 MW beam power are irradiated to mercury target of spallation neutron source in Materials and Life science Facility (MLF), which is one of facilities of J-PARC. Irradiated components, such as target container, moderator, reflector and proton beam window, are needed to replace periodically due to irradiation damage of high energy protons and neutrons. These used components are replaced remotely because of highly activated. Maintenance scenario was settled so as to handle these components. Required remote handling machines were designed and installed in hot cell and other room of the MLF. We performed remote handling tests by using actual components to confirm the design. We report results, such as replacement procedure, trouble and its solution, etc., for moderator, reflector and proton beam window in order to provide the handling of actual used components.

Journal Articles

Influence of heat treatment on long term creep properties of 9Cr-W-Mo-V-Nb steel

Obara, Satoshi; Wakai, Takashi; Asayama, Tai; Yamada, Yoshiyuki*; Nakazawa, Takanori*; Yamazaki, Masayoshi*; Hongo, Hiromichi*

Tetsu To Hagane, 96(4), p.172 - 181, 2010/04

This paper describes the effect of heat treatment on mechanical properties of 9Cr-W-Mo-V-Nb steel as a part of development of high Cr steel for fast breeder reactor (FBR). The effects of normalizing temperature and tempering temperature and time on creep properties were investigated from the viewpoint of microstructures. Creep strength increased with increase in normalizing temperature from 950$$^{circ}$$C to 1200$$^{circ}$$C. The microstructural factors that improve creep strength are increased amount of MX which precipitated during tempering process and increased dislocation density. In addition, coarsening of prior austenite grain size also contribute to increasing creep strength. Although creep rupture time of 780$$^{circ}$$C-1h tempering specimen was greater than that of 700$$^{circ}$$C-1h and 750$$^{circ}$$C-1h tempering specimen in a long-term region exceeding 20000h at 650$$^{circ}$$C, creep ductility and reduction of area of the former remarkably degraded compared to those of the latter.

Journal Articles

Influence of heat treatments on high temperature tensile properties and toughness of 9Cr-W-Mo-V-Nb steel

Obara, Satoshi; Wakai, Takashi; Asayama, Tai; Yamada, Yoshiyuki*; Nakazawa, Takanori*

Tetsu To Hagane, 95(5), p.417 - 425, 2009/05

 Times Cited Count:4 Percentile:62.73(Metallurgy & Metallurgical Engineering)

This paper describes the effect of heat treatment on mechanical properties of high chromium (Cr) ferritic steel 9Cr-W-Mo-V-Nb steel as a part of development of high Cr steel for fast breeder reactor (FBR). The effects of normalizing temperature and tempering temperature and time on high temperature tensile properties and Charpy impact properties were investigated from the viewpoint of microstructures.

JAEA Reports

Test plans of the high temperature test operation at HTTR

Sakaba, Nariaki; Nakagawa, Shigeaki; Takada, Eiji*; Nojiri, Naoki; Shimakawa, Satoshi; Ueta, Shohei; Sawa, Kazuhiro; Fujimoto, Nozomu; Nakazawa, Toshio; Ashikagaya, Yoshinobu; et al.

JAERI-Tech 2003-043, 59 Pages, 2003/03

JAERI-Tech-2003-043.pdf:2.54MB

HTTR plans a high temperature test operation as the fifth step of the rise-to-power tests to achieve a reactor outlet coolant temperature of 950 degrees centigrade in the 2003 fiscal year. Since HTTR is the first HTGR in Japan which uses coated particle fuel as its fuel and helium gas as its coolant, it is necessary that the plan of the high temperature test operation is based on the previous rise-to-power tests with a thermal power of 30 MW and a reactor outlet coolant temperature at 850 degrees centigrade. During the high temperature test operation, reactor characteristics, reactor performances and reactor operations are confirmed for the safety and stability of operations. This report describes the evaluation result of the safety confirmations of the fuel, the control rods and the intermediate heat exchanger for the high temperature test operation. Also, problems which were identified during the previous operations are shown with their solution methods. Additionally, there is a discussion on the contents of the high temperature test operation. As a result of this study, it is shown that the HTTR can safely achieve a thermal power of 30MW with the reactor outlet coolant temperature at 950 degrees centigrade.

JAEA Reports

Rise-to-power test in High Temperature Engineering Test Reactor; Test progress and summary of test results up to 30MW of reactor thermal power

Nakagawa, Shigeaki; Fujimoto, Nozomu; Shimakawa, Satoshi; Nojiri, Naoki; Takeda, Takeshi; Saikusa, Akio; Ueta, Shohei; Kojima, Takao; Takada, Eiji*; Saito, Kenji; et al.

JAERI-Tech 2002-069, 87 Pages, 2002/08

JAERI-Tech-2002-069.pdf:10.12MB

Rise-to-power test in the HTTR has been performed from April 23rd to June 6th in 2000 as phase 1 test up to 10MW, from January 29th to March 1st in 2001 as phase 2 test up to 20MW in the rated operation mode and from April 14th to June 8th in 2001 as phase 3 test up to 20MW in the high temperature test operation mode. Phase 4 test to achieve the thermal reactor power of 30MW started from October 23rd in 2001. On December 7th it was confirmed that the thermal reactor power reached to 30MW and the reactor outlet coolant temperature reached to 850$$^{circ}$$C. JAERI obtained the certificate of pre-operation test from MEXT because all the pre-operation tests by MEXT were passed successfully. From the test results of rise-up-power test up to 30MW, the performance of reactor and cooling system were confirmed, and it was confirmed that an operation of reactor facility could be performed safely. Some problems to be solved were found through tests. By means of solving them, the reactor operation with the reactor outlet coolant temperature of 950$$^{circ}$$C will be achievable.

JAEA Reports

JENDL Dosimetry File 99 (JENDL/D-99)

Kobayashi, Katsuhei*; Iguchi, Tetsuo*; Iwasaki, Shin*; Aoyama, Takafumi*; Shimakawa, Satoshi; Ikeda, Yujiro; Odano, Naoteru; Sakurai, Kiyoshi; Shibata, Keiichi; Nakagawa, Tsuneo; et al.

JAERI 1344, 133 Pages, 2002/01

JAERI-1344.pdf:7.59MB

The JENDL Dosimetry File 99 (JENDL/D-99) has been prepared for determinations of neutron flux/fluence and energy spectrum at specific neutron fields. This file contains data for 67 reactions with 47 nuclides. Cross sections for 33 major dosimetry reactions and their covariance data were simultaneously generated and the other 34 reaction data were mainly adopted from the first version, JENDL/D-91. The GMA code was mainly used for most of the evaluation procedures by referring the basic experimental data in EXFOR. The resultant data are given in the neutron energy region below 20 MeV in both of point-wise and group-wise files in the ENDF-6 format. In order to confirm reliability of the data, several integral tests have been carried out: comparison with the data in IRDF-90V2 and average cross sections measured in fission neutron fields, fast/thermal reactor spectra, DT neutron fields and Li(d,n) neutron fields. The contents of JENDL/D-99 and the results of the integral tests are described in this report. All of the dosimetry cross sections are shown in a graphical form in the Appendix.

Journal Articles

Impurity behavior during the H-mode in JFT-2M

Ogawa, Hiroaki; Kasai, Satoshi; Tamai, Hiroshi; Kawashima, Hisato; *; Yamauchi, Toshihiko; Mori, Masahiro; Miura, Yukitoshi; Suzuki, Norio; Sengoku, Seio; et al.

Journal of the Physical Society of Japan, 59(11), p.3962 - 3976, 1990/11

 Times Cited Count:4 Percentile:52.54(Physics, Multidisciplinary)

no abstracts in English

Journal Articles

Ion Bernstein wave experiment on JFT-2M tokamak

Tamai, Hiroshi; Ogawa, Toshihide; Matsumoto, Hiroshi; Odajima, Kazuo; ; Hoshino, Katsumichi; Kasai, Satoshi; Kawakami, Tomohide; Kawashima, Hisato; Kondoh, Takashi; et al.

Japanese Journal of Applied Physics, 29(10), p.L1911 - L1914, 1990/10

 Times Cited Count:1 Percentile:89.56(Physics, Applied)

no abstracts in English

Journal Articles

H mode observed in the JFT-2M tokamak with edge heating by electron cyclotron waves

Hoshino, Katsumichi; Yamamoto, Takumi; Kawashima, Hisato; Suzuki, Norio; Uesugi, Yoshihiko; Mori, Masahiro; ; Kasai, Satoshi; Kawakami, Tomohide; Matsuda, Toshiaki; et al.

Physical Review Letters, 63(7), p.770 - 773, 1989/08

 Times Cited Count:23 Percentile:19.53(Physics, Multidisciplinary)

no abstracts in English

JAEA Reports

Observation of H-mode by edge heating solely by electron cyclotron heating in a divertor configuration of JFT-2M tokamak

Hoshino, Katsumichi; Yamamoto, Takumi; Kawashima, Hisato; Suzuki, Norio; Uesugi, Yoshihiko; ; Kasai, Satoshi; Kawakami, Tomohide; Matsuda, Toshiaki; Miura, Yukitoshi; et al.

JAERI-M 89-038, 7 Pages, 1989/03

JAERI-M-89-038.pdf:0.29MB

no abstracts in English

Journal Articles

Pump limiter experiment on JFT-2M tokamak

Sengoku, Seio; ; Hoshino, Katsumichi; Kasai, Satoshi; Kawakami, Tomohide; Kawashima, Hisato; Kondo, Takashi*; Maeda, Hikosuke; Matsuda, Toshiaki; Matsumoto, Hiroshi; et al.

Journal of Nuclear Materials, 162-164, p.667 - 673, 1989/00

 Times Cited Count:3 Percentile:56.74

no abstracts in English

Journal Articles

A New mode of improved confinement in discharges with stationary density in JEF-2M

Mori, Masahiro; Suzuki, Norio; Uesugi, Yoshihiko; Ogawa, Toshihide; Ogawa, Hiroaki; Otsuka, Hideo; Odajima, Kazuo; Kasai, Satoshi; Kawakami, Tomohide; Kawashima, Hisato; et al.

Nuclear Fusion, 28(10), p.1892 - 1897, 1988/10

 Times Cited Count:21 Percentile:26.51(Physics, Fluids & Plasmas)

no abstracts in English

Journal Articles

Particle accumulation at the edge observed in n$$_{e}$$ and T$$_{e}$$ profiles of H-mode JFT-2M plasma

Yamauchi, Toshihiko; Odajima, Kazuo; Uesugi, Yoshihiko; ; D.Dimock*; Kawashima, Hisato; Kasai, Satoshi; Kawakami, Tomohide; Maeda, Hikosuke; Matsuda, Toshiaki; et al.

Physics Letters A, 131(4-5), p.301 - 309, 1988/08

 Times Cited Count:2 Percentile:64.71

no abstracts in English

Journal Articles

Steep gradient and pedestal of electron profiles in H-mode JFT-2M plasma

Yamauchi, Toshihiko; Hoshino, Katsumichi; Uesugi, Yoshihiko; ; Kawashima, Hisato; Kasai, Satoshi; Kawakami, Tomohide; Maeda, Hikosuke; Matoba, Toru; Matsuda, Toshiaki; et al.

Japanese Journal of Applied Physics, 27(5), p.L924 - L926, 1988/05

 Times Cited Count:1 Percentile:90(Physics, Applied)

no abstracts in English

43 (Records 1-20 displayed on this page)