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論文

Manipulation of saturation magnetization and perpendicular magnetic anisotropy in epitaxial Co$$_{x}$$Mn$$_{4-x}$$N films with ferrimagnetic compensation

伊藤 啓太*; 安富 陽子*; Zhu, S.*; Nurmamat, M.*; 田原 昌樹*; 都甲 薫*; 秋山 了太*; 竹田 幸治; 斎藤 祐児; 小口 多美夫*; et al.

Physical Review B, 101(10), p.104401_1 - 104401_8, 2020/03

 被引用回数:1 パーセンタイル:31.73(Materials Science, Multidisciplinary)

Spintronics devices utilizing a magnetic domain wall motion have attracted increasing attention, and ferrimagentic materials with almost compensated magnetic moments are highly required to realize the fast magnetic domain wall motion. Here, we report a key function for this purpose in anti-perovskite Co$$_{x}$$Mn$$_{4-x}$$N films. Perpendicular magnetization emerges for $$0.8 leq x$$, and the saturation magnetization reaches a minimum value at $$x = 0.8$$.

論文

Magnetic-impurity-induced modifications to ultrafast carrier dynamics in the ferromagnetic topological insulators Sb$$_{2-x}$$V$$_{x}$$Te$$_{3}$$

角田 一樹*; 鹿子木 将明*; Reimann, J.*; Nurmamat, M.*; 後藤 伸一*; 竹田 幸治; 斎藤 祐児; Kokh, K. A.*; Tereshchenko, O. E.*; G$"u$dde, J.*; et al.

New Journal of Physics (Internet), 21(9), p.093006_1 - 093006_8, 2019/09

 被引用回数:1 パーセンタイル:65.14(Physics, Multidisciplinary)

We systematically investigate the magnetic, structural and electronic properties and the ultrafast carrier dynamics in a series of V-doped Sb$$_{2}$$Te$$_{3}$$ samples of composition Sb$$_{2-x}$$V$$_{x}$$Te$$_{3}$$ with x = 0, 0.015 and 0.03. Element specific X-ray magnetic circular dichroism signifies that the ferromagnetism of V-doped Sb$$_{2}$$Te$$_{3}$$ is governed by the p-d hybridization between the host carrier and the magnetic dopant. Time- and angle-resolved photoemission spectroscopy has revealed that the V impurity induced states underlying the topological surface state (TSS) add scattering channels that significantly shorten the duration of transient surface electrons down to 100 fs scale. This is in a sharp contrast to the prolonged duration reported for pristine samples though the TSS is located inside the bulk energy gap of the host in either magnetic or non-magnetic cases. It implies the presence of a mobility gap in the bulk energy gap region of the host material.

論文

Negative Te spin polarization responsible for ferromagnetic order in the doped topological insulator V$$_{0.04}$$(Sb$$_{1-x}$$Bi$$_{x}$$)$$_{1.96}$$Te$$_{3}$$

Ye, M.*; Xu, T.*; Li, G.*; Qiao, S.*; 竹田 幸治; 斎藤 祐児; Zhu, S.-Y.*; Nurmamat, M.*; 角田 一樹*; 石田 行章*; et al.

Physical Review B, 99(14), p.144413_1 - 144413_7, 2019/04

 被引用回数:5 パーセンタイル:43.12(Materials Science, Multidisciplinary)

We investigate the microscopic origin of ferromagnetism coupled with topological insulators in V-doped (Sb,Bi)$$_{2}$$Te$$_{3}$$ employing X-ray magnetic circular dichroism and angle-resolved two-photon photoemission spectroscopies, combined with first-principles calculations. We found an magnetic moment at the Te site anti-parallel to that of the V and Sb sites, which plays a key role in the ferromagnetic order. We ascribe it to the hybridization between Te 5${it p}$ and V 3${it d}$ majority spin states at the Fermi energy, consistent with the Zener-type ${it p}$-${it d}$ exchange interaction scenario. The substitution of Bi for Sb suppresses the bulk ferromagnetism by introducing extra electron carriers in the majority spin channel of the Te ${it p}$ states that compensates the antiparallel magnetic moment on the Te site. Our findings reveal important clues to designing magnetic topological insulators with higher Curie temperature that work under ambient conditions.

論文

Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi)$$_{2}$$Te$$_{3}$$

Ye, M.*; Li, W.*; Zhu, S.-Y.*; 竹田 幸治; 斎藤 祐児; Wang, J.*; Pan, H.*; Nurmamat, M.*; 角田 一樹*; Ji, F.*; et al.

Nature Communications (Internet), 6, p.8913_1 - 8913_7, 2015/11

AA2015-0647.pdf:0.64MB

 被引用回数:35 パーセンタイル:9.98(Multidisciplinary Sciences)

磁性元素を添加したトポロジカル絶縁体は、量子異常ホール効果や無散逸伝導などの魅力的な現象の発現が予言され、低消費電力スピンデバイスの開発につながっていくものと期待されている。既に、いくつかの磁性添加トポロジカル絶縁体で長距離磁気秩序が確認されている。しかし、量子異常ホール効果の発現は、極低温におけるCrを添加した(Sb,Bi)$$_{2}$$Te$$_{3}$$系に限られており、強磁性の微視的な起源はほとんど分かっていない。そこで、今回、X線磁気円二色性実験による元素選択的研究を行うことにより、本物質系の強磁性は、母体の正孔キャリアーを媒介としたものであり、Crの3d電子とSbやTeのp電子の相互作用が極めて重要であることを明らかにした。この結果は、異常量子ホール素子の実現に向けても重要である。

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