検索対象:     
報告書番号:
※ 半角英数字
 年 ~ 
 年
検索結果: 4 件中 1件目~4件目を表示
  • 1

発表形式

Initialising ...

選択項目を絞り込む

掲載資料名

Initialising ...

発表会議名

Initialising ...

筆頭著者名

Initialising ...

キーワード

Initialising ...

使用言語

Initialising ...

発行年

Initialising ...

開催年

Initialising ...

選択した検索結果をダウンロード

論文

Growth temperature dependence of strain relaxation during InGaAs/GaAs(0 0 1) heteroepitaxy

佐々木 拓生*; 鈴木 秀俊*; 崔 炳久*; 高橋 正光; 藤川 誠司; 神谷 格*; 大下 祥雄*; 山口 真史*

Journal of Crystal Growth, 323(1), p.13 - 16, 2011/05

 被引用回数:16 パーセンタイル:17.9(Crystallography)

In$$_{0.12}$$Ga$$_{0.88}$$As/GaAs(001)の分子線エピタキシャル成長中のひずみ緩和の様子をその場X線逆格子マッピングにより解析した。成長温度420, 445, 477$$^{circ}$$Cにおける残留ひずみ・結晶性の変化の様子が測定された。Dodson-Tsaoの運動学的モデルは、実験による残留ひずみの測定結果とよく一致することがわかった。さらにひずみ緩和過程における転位の運動の温度依存性の解析から、転位の運動の熱励起を議論することが可能になった。

論文

Real-time observation of anisotropic strain relaxation by three-dimensional reciprocal space mapping during InGaAs/GaAs(001) growth

鈴木 秀俊*; 佐々木 拓生*; 崔 炳久*; 大下 祥雄*; 神谷 格*; 山口 真史*; 高橋 正光; 藤川 誠司

Applied Physics Letters, 97(4), p.041906_1 - 041906_3, 2010/07

 被引用回数:28 パーセンタイル:23.86(Physics, Applied)

Real-time three-dimensional reciprocal space mapping measurement during In$$_{0.12}$$Ga$$_{0.88}$$As/GaAs(001) molecular beam epitaxial growth has been performed to investigate anisotropy in relaxation processes. Anisotropies, strain relaxation, and crystal quality in [110] and [1$$bar{1}$$0] directions were simultaneously evaluated via the position and broadness of 022 diffraction. In the small-thickness region, strain relaxation caused by $$alpha$$-dislocations is higher than that caused by $$beta$$-dislocations, and therefore crystal quality along [110] is worse than that along [1$$bar{1}$$0]. Rapid relaxation along both [110] and [1$$bar{1}$$0] directions occurs at almost the same thickness. After rapid relaxation, anisotropy in strain relaxation gradually decreases, whereas crystal quality along [1$$bar{1}$$0] direction, presumably due to $$beta$$-dislocations, becomes better that along [110] direction and the ratio does not decay with thickness.

論文

In situ study of strain relaxation mechanisms during lattice-mismatched InGaAs/GaAs growth by X-ray reciprocal space mapping

佐々木 拓生*; 鈴木 秀俊*; 崔 炳久*; 高橋 正光; 藤川 誠司; 大下 祥雄*; 山口 真史*

Materials Research Society Symposium Proceedings, Vol.1268, 6 Pages, 2010/05

 被引用回数:0 パーセンタイル:100

The in situ X-ray reciprocal space mapping (in situ RSM) of symmetric diffraction measurements during lattice-mismatched InGaAs/GaAs(001) growth were performed to investigate the strain relaxation mechanisms. The evolution of the residual strain and crystal quality were obtained as a function of InGaAs film thickness. Based on the results, the correlation between the strain relaxation and the dislocations during the film growth were evaluated. As a result, film thickness ranges with different relaxation mechanisms were classified, and dominant dislocation behavior in each phase were deduced. From the data obtained in in situ measurements, the quantitative strain relaxation models were proposed based on a dislocation kinetic model developed by Dodson and Tsao. Good agreement between the in situ data and the model ensured the validity of the dominant dislocation behavior deduced from the present study.

論文

${it In situ}$ real-time X-Ray reciprocal space mapping during InGaAs/GaAs growth for understanding strain relaxation mechanisms

佐々木 拓生*; 鈴木 秀俊*; 崔 炳久*; Lee, J.-H.*; 高橋 正光; 藤川 誠司; 新船 幸二*; 神谷 格*; 大下 祥雄*; 山口 真史*

Applied Physics Express, 2, p.085501_1 - 085501_3, 2009/07

 被引用回数:33 パーセンタイル:20.96(Physics, Applied)

${it In situ}$ real-time X-ray diffraction measurements during In$$_{0.12}$$Ga$$_{0.88}$$As/GaAs(001) epitaxial growth are performed for the first time to understand the strain relaxation mechanisms in a lattice-mismatched system. The high resolution reciprocal space maps of 004 diffraction obtained at interval of 6.2 nm thickness enable transient behavior of residual strain and crystal quality to be observed simultaneously as a function of InGaAs film thickness. From the evolution of these data, five thickness ranges with different relaxation processes and these transition points are determined quantitatively, and the dominant dislocation behavior in each phase is deduced.

4 件中 1件目~4件目を表示
  • 1