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論文

Single crystal growth and transport properties of RRu$$_{2}$$Al$$_{10}$$ (R = La and Pr)

迫田 將仁*; 久保田 和宏*; 田中 修平*; 松岡 英一*; 菅原 仁*; 松田 達磨; 芳賀 芳範

Journal of the Physical Society of Japan, 81(Suppl.B), p.SB011_1 - SB011_4, 2012/12

https://doi.org/10.1143/JPSJS.81SB.SB011
 被引用回数：2 パーセンタイル：10.8(Physics, Multidisciplinary)

We have succeeded in growing single crystals of RRu$$_{2}$$Al$$_{10}$$ (R =La and Pr), and measured their electrical resistivity and Hall effect to gain the deeper insight of the physical properties of CeRu$$_{2}$$Al$$_{10}$$ which exhibits an unusual long-range order (LRO) below $$T_0 sim$$ 27 K. The temperature dependences of the electrical resistivity of both LaRu$$_{2}$$Al$$_{10}$$ and PrRu$$_{2}$$Al$$_{10}$$ show the typical metallic behavior without any phase transition. The Hall effect measurements reveal that the carrier number of CeRu2Al10 in the LRO region is about 30 times smaller than that of LaRu$$_{2}$$Al$$_{10}$$, indicating highly different electronic states between these compounds below $$T_0$$.

論文

High field magnetoresistance and de Haas-van Alphen effect in LaRu$$_2$$Al$$_{10}$$

迫田 將仁*; 田中 修平*; 松岡 英一*; 菅原 仁*; 播磨 尚朝*; 本多 史憲*; 摂待 力生*; 大貫 惇睦; 松田 達磨; 芳賀 芳範

Journal of the Physical Society of Japan, 80(8), p.084716_1 - 084716_5, 2011/08

https://doi.org/10.1143/JPSJ.80.084716
 被引用回数：8 パーセンタイル：50.77(Physics, Multidisciplinary)

Magnetoresistance and de Haas-van Alphen (dHvA) effect were studied to investigate Fermi surface topology in LaRu$$_2$$Al$$_{10}$$. From the positive magnetoresistance in a wide angular region, this compound is regarded as a compensated metal. On the other hand, dHvA measurement shows several Fermi surface branches with a cyclotron effective mass close to the electron rest mass. The Fermi surface topology was well explained by the band calculations.

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