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High field magnetoresistance and de Haas-van Alphen effect in LaRu$$_2$$Al$$_{10}$$

LaRu$$_2$$Al$$_{10}$$における強磁場磁気抵抗とドハース・ファンアルフェン効果

迫田 將仁*; 田中 修平*; 松岡 英一*; 菅原 仁*; 播磨 尚朝*; 本多 史憲*; 摂待 力生*; 大貫 惇睦; 松田 達磨; 芳賀 芳範

Sakoda, Masahito*; Tanaka, Shuhei*; Matsuoka, Eiichi*; Sugawara, Hitoshi*; Harima, Hisatomo*; Honda, Fuminori*; Settai, Rikio*; Onuki, Yoshichika; Matsuda, Tatsuma; Haga, Yoshinori

Magnetoresistance and de Haas-van Alphen (dHvA) effect were studied to investigate Fermi surface topology in LaRu$$_2$$Al$$_{10}$$. From the positive magnetoresistance in a wide angular region, this compound is regarded as a compensated metal. On the other hand, dHvA measurement shows several Fermi surface branches with a cyclotron effective mass close to the electron rest mass. The Fermi surface topology was well explained by the band calculations.

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パーセンタイル:48.39

分野:Physics, Multidisciplinary

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