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Sn
S-based shandite filmsLau, Y.-C.*; 池田 絢哉*; 藤原 宏平*; 小沢 耀弘*; Zheng, J.*; 関 剛斎*; 野村 健太郎*; Du, L.*; Wu, Q.*; 塚崎 敦*; et al.
Physical Review B, 108(6), p.064429_1 - 064429_11, 2023/08
被引用回数：14 パーセンタイル：73.09(Materials Science, Multidisciplinary)Magnetic Weyl semimetals (mWSMs) are characterized by linearly dispersive bands with chiral Weyl node pairs associated with broken time-reversal symmetry. One of the hallmarks of mWSMs is the emergence of large intrinsic anomalous Hall effect. On heating the mWSM above its Curie temperature, the magnetism vanishes while exchange-split Weyl point pairs collapse into doubly degenerate gapped Dirac states. Here, we reveal the attractive potential of these Dirac nodes in paramagnetic state for efficient spin current generation at room temperature via the spin Hall effect. Ni and In are introduced to separately substitute Co and Sn in a prototypal mWSM CoSnS shandite film and tune the Fermi level. Composition dependence of spin Hall conductivity for paramagnetic shandite at room temperature resembles that of anomalous Hall conductivity for ferromagnetic shandite at low temperature; exhibiting peak-like dependence centering around the Ni-substituted CoNi
SnS and undoped CoSnS compositions, respectively. The observed spin Hall and anomalous Hall conductivity maxima at different compositions reflect optimum Fermi-level positioning relative to the paramagnetic Dirac and magnetic Weyl states, suggesting the common origin and intercorrelation between the two Hall effects. Our findings highlight a strategy for the quest of spin Hall materials, guided by the abundant experimental anomalous Hall-effect data of ferromagnets in the literature.
SnS submicrometer-wide wire devices塩貝 淳一*; 池田 絢哉*; 藤原 宏平*; 関 剛斎*; 高梨 弘毅; 塚崎 敦*
Physical Review Materials (Internet), 6(11), p.114203_1 - 114203_9, 2022/11
被引用回数：6 パーセンタイル：28.12(Materials Science, Multidisciplinary)Microscopic understanding of magnetization switching via domain nucleation and/or domain-wall propagation is fundamental knowledge for developing magnetic and spintronic devices. Here, we explore the underlying mechanism of the large coercivity of the magnetic Weyl semimetal CoSnS thin films, which is roughly ten times larger than that of CoSnS bulk single crystal, by measuring Hall resistance in constricted wire devices. The discretized steplike variations appear in the hysteresis loops of the Hall resistance in 0.6 micrometers wide and narrower devices, indicating that the size of the reversed magnetic domain is comparable to the active area of the Hall devices. By counting the number of discrete features, the average diameter of the reversed magnetic domain is estimated to be 80 nm. Individually, the diameter of the reversed domain nucleus is evaluated to be roughly 2 nm. Considering the difference in the diameters of the reversed magnetic domain and the reversed domain nucleus, we ascribed the large coercivity of the CoSnS thin films to a large nucleation field owing to the uniform crystallinity within grains and strong domain-wall pinning at grain boundaries specific to the thin films. With the large nucleation field in the films, an engineering of the domain-wall pinning sites is a promising approach to control the nucleation, manipulation, and detection of the single domain wall in CoSnS thin-film devices.
大塚 悠介*; 金澤 直也*; 平山 元昭*; 松井 彬*; 野本 拓也*; 有田 亮太郎*; 中島 多朗*; 花島 隆泰*; Ukleev, V.*; 青木 裕之; et al.
Science Advances (Internet), 7(47), p.eabj0498_1 - eabj0498_9, 2021/11
被引用回数：22 パーセンタイル：67.43(Multidisciplinary Sciences)FeSi is a nonmagnetic narrow-gap insulator, exhibiting peculiar charge and spin dynamics beyond a simple band structure picture. Those unusual features have been attracting renewed attention from topological aspects. Although the surface conduction was demonstrated according to size-dependent resistivity in bulk crystals, its topological characteristics and consequent electromagnetic responses remain elusive. Here, we demonstrate an inherent surface ferromagnetic-metal state of FeSi thin films and its strong spin-orbit coupling (SOC) properties through multiple characterizations of two-dimensional conductance, magnetization, and spintronic functionality. Terminated covalent bonding orbitals constitute the polar surface state with momentum-dependent spin textures due to Rashba-type spin splitting, as corroborated by unidirectional magnetoresistance measurements and first-principles calculations. As a consequence of the spin-momentum locking, nonequilibrium spin accumulation causes magnetization switching. These surface properties are closely related to the Zak phase of the bulk band topology. Our findings propose another route to explore noble metal-free materials for SOC-based spin manipulation.
