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Journal Articles

Recent progress of radiation physicochemical process (third part)

Kai, Takeshi; Yokoya, Akinari*; Fujii, Kentaro*; Watanabe, Ritsuko*

Hoshasen Kagaku (Internet), (106), p.21 - 29, 2018/11

It is thought to that the biological effects such as cell death or mutation are induced by complex DNA damage which are formed by several damage sites within a few nm. As the prediction of complex DNA damage at an electron track end, we report our outcomes. These results indicate that DNA damage sites comprising multiple nucleobase lesions with a single strand breaks can be formed by multiple collisions of the electrons within 1 nm. This multiple damage site cannot be processed by base excision repair enzymes. Pre-hydrated electrons can also be produced resulting in an additional base lesion over a few nm from the multi-damage site. This clustered damage site may be finally converted into a double strand break. These DSBs include another base lesion(s) at their termini that escape from the base excision process and which may result in biological effect. Our simulation is useful to reveal phenomena involved in radiation physico-chemistry as well as the DNA damage prediction.

Journal Articles

SiO$$_{2}$$/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

Watanabe, Kenta*; Terashima, Daiki*; Nozaki, Mikito*; Yamada, Takahiro*; Nakazawa, Satoshi*; Ishida, Masahiro*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; et al.

Japanese Journal of Applied Physics, 57(6S3), p.06KA03_1 - 06KA03_6, 2018/06

 Times Cited Count:4 Percentile:32.09(Physics, Applied)

The advantage of SiO$$_{2}$$/AlON stacked gate dielectrics over SiO$$_{2}$$, AlON and Al$$_{2}$$O$$_{3}$$ single dielectric layers was demonstrated. Our systematic research revealed that the optimized stacked structure with 3.3-nm-thick AlON interlayer is beneficial in terms of superior interface quality, reduced gate leakage current and C-V hysteresis for next-generation high frequency and high power AlGaN/GaN MOS-HFETs.

Journal Articles

Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties

Nozaki, Mikito*; Watanabe, Kenta*; Yamada, Takahiro*; Shih, H.-A.*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

Japanese Journal of Applied Physics, 57(6S3), p.06KA02_1 - 06KA02_7, 2018/06

 Times Cited Count:4 Percentile:32.09(Physics, Applied)

We fabricated AlON dielectric films by repeating thin AlN deposition and in situ O$$_{3}$$ oxidation for AlGaN/GaN MOS-HFETs. Uniform nitrogen distribution is achievable by the proposed ALD-based process and that nitrogen concentration can be precisely controlled by changing AlN thickness (ALD cycle number) in each step. It was found that AlON films grown by ALD system offers significant advantages in terms of practical application while keeping superior Vth stability and electrical properties at the insulator/AlGaN interface in AlGaN/GaN MOS-HFETs.

Journal Articles

Control of Ga-oxide interlayer growth and Ga diffusion in SiO$$_{2}$$/GaN stacks for high-quality GaN-based metal-oxide-semiconductor devices with improved gate dielectric reliability

Yamada, Takahiro*; Watanabe, Kenta*; Nozaki, Mikito*; Yamada, Hisashi*; Takahashi, Tokio*; Shimizu, Mitsuaki*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Applied Physics Express, 11(1), p.015701_1 - 015701_4, 2018/01

 Times Cited Count:9 Percentile:12.47(Physics, Applied)

A simple and feasible method for fabricating high-quality and highly reliable GaN-based metal-oxide-semiconductor (MOS) devices was developed on the basis of systematic physical and electrical characterizations. Chemical vapor deposition of SiO$$_{2}$$ films directly onto GaN substrates forming Ga-oxide interlayers was used to fabricate SiO$$_{2}$$/GaO$$_{x}$$/GaN stacked structures. Although well-behaved hysteresis-free GaN-MOS capacitors with extremely low interface state density below 10$$^{10}$$cm$$^{-2}$$eV$$^{-1}$$ were obtained by post-deposition annealing, Ga diffusion into overlying SiO$$_{2}$$ layers severely degraded the insulating property and dielectric breakdown characteristics of the MOS devices. However, this problem was found to be solved by employing rapid thermal processing, leading to superior performance of the GaN-MOS devices in terms of interface quality, insulating property and gate dielectric reliability.

Journal Articles

A Significant role of non-thermal equilibrated electrons in the formation of deleterious complex DNA damage

Kai, Takeshi; Yokoya, Akinari*; Ukai, Masatoshi*; Fujii, Kentaro*; Toigawa, Tomohiro; Watanabe, Ritsuko*

Physical Chemistry Chemical Physics, 20(4), p.2838 - 2844, 2018/01

 Times Cited Count:4 Percentile:29.85(Chemistry, Physical)

It is thought that complex DNA damage which induces in radiation biological effects is formed at radiation track end. Thus, the earliest stage of water radiolysis at the electron track end was studied to predict DNA damage. These results indicate that DNA damage sites comprising multiple nucleobase lesions with a single strand breaks can therefore be formed by multiple collisions of the electrons within three base pairs (3bp) of a DNA strand. This multiple damage site cannot be processed by base excision repair enzymes. However, pre-hydrated electrons can also be produced resulting in an additional base lesion more than 3bp away from the multi-damage site. This clustered damage site may be finally converted into a double strand break (DSB) when base excision enzymes process the additional base lesions. These DSBs include another base lesion(s) at their termini that escape from the base excision process and which may result in biological effects such as mutation in surviving cells.

Journal Articles

Role of multichance fission in the description of fission-fragment mass distributions at high energies

Hirose, Kentaro; Nishio, Katsuhisa; Tanaka, Shoya*; L$'e$guillon, R.*; Makii, Hiroyuki; Nishinaka, Ichiro*; Orlandi, R.; Tsukada, Kazuaki; Smallcombe, J.*; Vermeulen, M. J.; et al.

Physical Review Letters, 119(22), p.222501_1 - 222501_6, 2017/12

 Times Cited Count:17 Percentile:8.64(Physics, Multidisciplinary)

Fission-fragment mass distributions were measured for $$^{237-240}$$U, $$^{239-242}$$Np and $$^{241-244}$$Pu populated in the excitation-energy range from 10 to 60 MeV by multi-nucleon transfer channels in the reaction $$^{18}$$O + $$^{238}$$U at the JAEA tandem facility. Among them, the data for $$^{240}$$U and $$^{240,241,242}$$Np were observed for the first time. It was found that the mass distributions for all the studied nuclides maintain a double-humped shape up to the highest measured energy in contrast to expectations of predominantly symmetric fission due to the washing out of nuclear shell effects. From a comparison with the dynamical calculation based on the fluctuation-dissipation model, this behavior of the mass distributions was unambiguously attributed to the effect of multi-chance fission.

Journal Articles

Observation of a $$gamma$$-decaying millisecond isomeric state in $$^{128}$$Cd$$_{80}$$

Jungclaus, A.*; Grawe, H.*; Nishimura, Shunji*; Doornenbal, P.*; Lorusso, G.*; Simpson, G. S.*; S$"o$derstr$"o$m, P.-A.*; Sumikama, Toshiyuki*; Taprogge, J.*; Xu, Z. Y.*; et al.

Physics Letters B, 772, p.483 - 488, 2017/09

 Times Cited Count:6 Percentile:24.52(Astronomy & Astrophysics)

Journal Articles

Materials and Life Science Experimental Facility at the Japan Proton Accelerator Research Complex, 3; Neutron devices and computational and sample environments

Sakasai, Kaoru; Sato, Setsuo*; Seya, Tomohiro*; Nakamura, Tatsuya; To, Kentaro; Yamagishi, Hideshi*; Soyama, Kazuhiko; Yamazaki, Dai; Maruyama, Ryuji; Oku, Takayuki; et al.

Quantum Beam Science (Internet), 1(2), p.10_1 - 10_35, 2017/09

Neutron devices such as neutron detectors, optical devices including supermirror devices and $$^{3}$$He neutron spin filters, and choppers are successfully developed and installed at the Materials Life Science Facility (MLF) of the Japan Proton Accelerator Research Complex (J-PARC), Tokai, Japan. Four software components of MLF computational environment, instrument control, data acquisition, data analysis, and a database, have been developed and equipped at MLF. MLF also provides a wide variety of sample environment options including high and low temperatures, high magnetic fields, and high pressures. This paper describes the current status of neutron devices, computational and sample environments at MLF.

Journal Articles

Design and control of interface reaction between Al-based dielectrics and AlGaN Layer in AlGaN/GaN metal-oxide-semiconductor structures

Watanabe, Kenta*; Nozaki, Mikito*; Yamada, Takahiro*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

Applied Physics Letters, 111(4), p.042102_1 - 042102_5, 2017/07

 Times Cited Count:10 Percentile:22.28(Physics, Applied)

AlGaN/GaN HFET (hetero-junction field-effect transitor) has gained much attention as next-generation high frequency and high power devices. In this study, we systematically investigated the interface reaction between Al-based dielectrics (Al$$_{2}$$O$$_{3}$$ and AlON) and AlGaN layer during deposition and post-deposition annealing (PDA), and revealed high thermal stability of AlON/AlGaN interface.

Journal Articles

Dynamic behavior of secondary electrons produced by a high-energy electron in liquid water

Kai, Takeshi; Yokoya, Akinari*; Fujii, Kentaro*; Watanabe, Ritsuko*

Yodenshi Kagaku, (8), p.11 - 17, 2017/03

It is thought to that the biological effects such as cell death or mutation are induced by complex DNA damage which are formed by several damage sites within a few nm. We calculated dynamic behavior of secondary electrons produced by primary electron and positon of high energy in water whose composition ratio is similar to biological context. The secondary electrons induce the ionization or electronic excitation near the parent cations. The decelerated electrons about 10% are distributed to their parent cations by the attractive Coulombic force. From the results, we predicted the following formation mechanism for the complex DNA damage. The electrons ejected from DNA could induce the ionization or the electronic excitation within the DNA. The electrons attracted by the Coulombic force are pre-hydrated in water layer of the DNA. The pre-hydrated electrons could induce to the DNA damage by dissociative electron transfer. As the results, the complex DNA damage with 1 nm could be formed by the interaction of not only the primary electron or positon but also the secondary electrons.

Journal Articles

Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

Yamada, Takahiro*; Ito, Joyo*; Asahara, Ryohei*; Watanabe, Kenta*; Nozaki, Mikito*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; et al.

Journal of Applied Physics, 121(3), p.035303_1 - 035303_9, 2017/01

 Times Cited Count:28 Percentile:5.61(Physics, Applied)

Initial oxidation of GaN(0001) epilayers and subsequent growth of thermal oxides in dry oxygen ambient were investigated by means of X-ray photoelectron spectroscopy, spectroscopic ellipsometry, atomic force microscopy and X-ray diffraction measurements. It was found that, whereas initial oxide formation tends to saturate at temperatures below 800$$^{circ}$$C, selective growth of small oxide grains proceeds at dislocations in the epilayers, followed by noticeable grain growth leading to rough surface morphology at higher oxidation temperatures. This indicates that oxide growth and its morphology are crucially dependent on the defect density in the GaN epilayers. Structural characterizations also revealed that polycrystalline $$alpha$$- and $$beta$$-phase Ga$$_{2}$$O$$_{3}$$ grains in an epitaxial relation with the GaN substrate are formed from the initial stage of the oxide growth. On the basis of these experimental findings, we also developed a comprehensive model for GaN oxidation mediated by nitrogen removal and mass transport.

Journal Articles

Deceleration processes of secondary electrons produced by a high-energy Auger electron in a biological context

Kai, Takeshi; Yokoya, Akinari; Ukai, Masatoshi; Fujii, Kentaro; Watanabe, Ritsuko

International Journal of Radiation Biology, 92(11), p.654 - 659, 2016/11

 Times Cited Count:2 Percentile:62.01(Biology)

Journal Articles

Dynamic behavior of secondary electrons in liquid water at the earliest stage upon irradiation; Implications for DNA damage localization mechanism

Kai, Takeshi; Yokoya, Akinari*; Ukai, Masatoshi*; Fujii, Kentaro*; Watanabe, Ritsuko*

Journal of Physical Chemistry A, 120(42), p.8228 - 8233, 2016/10

 Times Cited Count:4 Percentile:67.91(Chemistry, Physical)

Low energy secondary electrons produced by an ionizing radiation in a living cell may involve in formation of complexed DNA damage. We performed theoretical study for numerical calculation of dynamic behavior of the electrons to imply a formation of radiation damage to DNA. The decelerating electrons are gradually attracted to their parent cations by the Coulombic force within hundreds of fs, and about 12.6 % of electrons are finally distributed within 2 nm from the cations. The collision fraction of the ionization and excitation within 1 nm from the cation was estimated to be about 40 %. From those analyses, we suggested a process of DNA damage that the secondary electrons may cause highly localized lesions around a cation in DNA molecule through additional dissociative electron transfer as well as the ionization or the excitation if the electrons are ejected from DNA. The localized damage may involve ultimately in biological effects such as cell death or mutation induction.

Journal Articles

$$beta$$ decay of semi-magic $$^{130}$$Cd; Revision and extension of the level scheme of $$^{130}$$In

Jungclaus, A.*; Grawe, H.*; Nishimura, Shunji*; Doornenbal, P.*; Lorusso, G.*; Simpson, G. S.*; S$"o$derstr$"o$m, P. A.*; Sumikama, Toshiyuki*; Taprogge, J.*; Xu, Z. Y.*; et al.

Physical Review C, 94(2), p.024303_1 - 024303_8, 2016/08

 Times Cited Count:11 Percentile:17.6(Physics, Nuclear)

Journal Articles

Recent progress of radiation physicochemical process (first part)

Kai, Takeshi; Yokoya, Akinari; Fujii, Kentaro; Watanabe, Ritsuko

Hoshasen Kagaku (Internet), (101), p.3 - 11, 2016/04

Behavior analysis of low energy electrons in liquid water provides the fundamentals for successive radiation chemistry, and it makes analysis of DNA damage implication involved in the electrons possible. We have progressed theoretical studies for radiation physicochemical process of liquid water to clear the role of low-energy secondary electrons damage to DNA. The process has included many unknown factors for the DNA damage so far. Based on the results, we implied a newly formation process of unrepair DNA damage produced by the secondary electrons assumed that it was ejected from DNA by impact of a high energy electron. We report our outcomes separately in three manuscripts entitled "Recent progress of radiation physicochemical process (first, second, third parts)" to journal of radiation chemistry. In this first part, we outline recent status of studies for the DNA damage and the radiation physicochemical process, we also show calculation method of electron impact cross sections involved strongly in electron deceleration in liquid water in the topics of our outcomes. From the calculated results, we also report our prediction, which are different from previous one, for electron thermalization.

Journal Articles

First observation of $$gamma$$ rays emitted from excited states south-east of $$^{132}$$Sn; The $$pi$$ g$$_{9/2}^{-1}$$ $$ otimes$$ $$nu f_{7/2}$$ multiplet of $$^{132}$$In$$_{83}$$

Jungclaus, A.*; Gargano, A.*; Grawe, H.*; Taprogge, J.*; Nishimura, Shunji*; Doornenbal, P.*; Lorusso, G.*; Shimizu, Y.*; Simpson, G. S.*; S$"o$derstr$"o$m, P.-A.*; et al.

Physical Review C, 93(4), p.041301_1 - 041301_6, 2016/04

 Times Cited Count:10 Percentile:20.12(Physics, Nuclear)

Journal Articles

Recent progress of radiation physicochemical process (second part)

Kai, Takeshi; Yokoya, Akinari*; Fujii, Kentaro*; Watanabe, Ritsuko*

Hoshasen Kagaku (Internet), (102), p.49 - 56, 2016/00

Behavior analysis of low energy electrons in liquid water provides the fundamentals for successive radiation chemistry, and it makes analysis of DNA damage implication involved in the electrons possible. We have progressed theoretical studies for radiation physicochemical process of water to clear the role of secondary electrons damage to DNA. The process has included many unknown factors for the DNA damage so far. We implied a newly formation process of unrepair DNA damage produced by the secondary electrons. We report our outcomes separately in three manuscripts entitled "Recent progress of radiation physicochemical process (first, second, third parts)". In this second part, we show calculated results of thermalization lengths and times of electrons in water to verify a dynamic Monte Carlo code developed in this study. From the calculated results, we also report our prediction, which are different from previous one, for thermalization and pre-hydration processes.

Journal Articles

Thermal equilibrium and prehydration processes of electrons injected into liquid water calculated by dynamic Monte Carlo method

Kai, Takeshi; Yokoya, Akinari; Ukai, Masatoshi*; Fujii, Kentaro; Watanabe, Ritsuko

Radiation Physics and Chemistry, 115, p.1 - 5, 2015/10

 Times Cited Count:8 Percentile:22.06(Chemistry, Physical)

Role of secondary electrons on DNA damage have not been understood sufficiently because there still exists a lack of study for thermalization process of an electron in liquid phase. We calculated thermalization lengths and spatial distributions of an electron in liquid water using cross sections for rotation and phonon excitations in a liquid phase. Obtained thermalization lengths are in good agreement with experimental results reported by literatures. Thermalization time was also estimated from time evolution of spatial distributions of the incident electron to be hundreds femtoseconds. From these results, we predict that thermalization and pre-hydration of electron might progress simultaneously. These electrons possibly cause damage in biological molecules in a cell. Particularly severe types of DNA damage consisting of proximately located multiple lesions are potentially induced by reaction of DNA with the thermalized electrons by dissociative electron transfer.

Journal Articles

Nuclear structure of $$^{37,38}$$Si investigated by decay spectroscopy of $$^{37,38}$$Al

Steiger, K.*; Nishimura, Shunji*; Li, Z.*; Gernh$"a$user, R.*; Utsuno, Yutaka; Chen, R.*; Faestermann, T.*; Hinke, C.*; Kr$"u$cken, R.*; Nishimura, Mitsuki*; et al.

European Physical Journal A, 51(9), p.117_1 - 117_9, 2015/09

 Times Cited Count:6 Percentile:42(Physics, Nuclear)

no abstracts in English

Journal Articles

$$beta$$ decay of $$^{129}$$Cd and excited states in $$^{129}$$In

Taprogge, J.*; Jungclaus, A.*; Grawe, H.*; Nishimura, Shunji*; Doornenbal, P.*; Lorusso, G.*; Simpson, G. S.*; S$"o$derstr$"o$m, P.-A.*; Sumikama, Toshiyuki*; Xu, Z. Y.*; et al.

Physical Review C, 91(5), p.054324_1 - 054324_11, 2015/05

 Times Cited Count:17 Percentile:12.84(Physics, Nuclear)

109 (Records 1-20 displayed on this page)