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JAEA Reports

Status of study of long-term assessment of transport of radioactive contaminants in the environment of Fukushima (FY2018) (Translated document)

Nagao, Fumiya; Niizato, Tadafumi; Sasaki, Yoshito; Ito, Satomi; Watanabe, Takayoshi; Dohi, Terumi; Nakanishi, Takahiro; Sakuma, Kazuyuki; Hagiwara, Hiroki; Funaki, Hironori; et al.

JAEA-Research 2020-007, 249 Pages, 2020/10

JAEA-Research-2020-007.pdf:15.83MB

The accident of the Fukushima Daiichi Nuclear Power Station, Tokyo Electric Power Company Holdings, Inc. occurred due to the Great East Japan Earthquake, Sanriku offshore earthquake, of 9.0 magnitude and the accompanying tsunami. As a result, large amount of radioactive materials was released into the environment. Under these circumstances, Japan Atomic Energy Agency (JAEA) has been conducting "Long-term Assessment of Transport of Radioactive Contaminants in the Environment of Fukushima" concerning radioactive materials released in environment, especially migration behavior of radioactive cesium since November 2012. This report is a summary of the research results that have been obtained in environmental dynamics research conducted by JAEA in Fukushima Prefecture.

Journal Articles

Vertical and horizontal distributions of $$^{137}$$Cs on paved surfaces affected by the Fukushima Dai-ichi Nuclear Power Plant accident

Yoshimura, Kazuya; Watanabe, Takayoshi; Kurikami, Hiroshi

Journal of Environmental Radioactivity, 217, p.106213_1 - 106213_6, 2020/06

 Times Cited Count:0 Percentile:100(Environmental Sciences)

Journal Articles

Temporal change of radiocesium loss in a decontaminated deciduous broad-leaved forest

Watanabe, Takayoshi; Sasaki, Yoshito; Niizato, Tadafumi; Mitachi, Katsuaki*; Ito, Satomi

KEK Proceedings 2019-2, p.114 - 119, 2019/11

no abstracts in English

JAEA Reports

Status of study of long-term assessment of transport of radioactive contaminants in the environment of Fukushima (FY2018)

Nagao, Fumiya; Niizato, Tadafumi; Sasaki, Yoshito; Ito, Satomi; Watanabe, Takayoshi; Dohi, Terumi; Nakanishi, Takahiro; Sakuma, Kazuyuki; Hagiwara, Hiroki; Funaki, Hironori; et al.

JAEA-Research 2019-002, 235 Pages, 2019/08

JAEA-Research-2019-002.pdf:21.04MB

The accident of the Fukushima Daiichi Nuclear Power Station (hereinafter referred to 1F), Tokyo Electric Power Company Holdings, Inc. occurred due to the Great East Japan Earthquake, Sanriku offshore earthquake, of 9.0 magnitude and the accompanying tsunami. As a result, large amount of radioactive materials was released into the environment. Under these circumstances, JAEA has been conducting Long-term Environmental Dynamics Research concerning radioactive materials released in environment, especially migration behavior of radioactive cesium since November 2012. This report is a summary of the research results that have been obtained in environmental dynamics research conducted by JAEA in Fukushima Prefecture.

Journal Articles

Physical and electrical characterizations of AlGaN/GaN MOS gate stacks with AlGaN surface oxidation treatment

Yamada, Takahiro*; Watanabe, Kenta*; Nozaki, Mikito*; Shih, H.-A.*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

Japanese Journal of Applied Physics, 57(6S3), p.06KA07_1 - 06KA07_6, 2018/06

 Times Cited Count:3 Percentile:63.29(Physics, Applied)

Thermal oxidation of AlGaN surface and its impact on the electrical properties of AlGaN/GaN MOS capacitors were investigated by means of synchrotron radiation photoelectron spectroscopy (SR-PES), atomic force microscopy (AFM) and C-V measurements. SR-PES analysis revealed that the AlGaN surface is oxidized even at low temperature of 400$$^{circ}$$C, in contrast to no oxide formation on GaN surface. However, since no noticeable change in the surface morphology was observed at temperatures up to 800$$^{circ}$$C, it can be concluded that an ultrathin oxide overlayer is formed on the AlGaN surface. On the other hand, for the oxidation treatments above 850$$^{circ}$$C, the formation of small oxide grains was observed over the entire area of the AlGaN surface, and the growth of oxide grains significantly degraded the surface morphology. Therefore, the AlGaN/GaN MOS capacitors were fabricated on the AlGaN surface oxidized at moderate temperatures up to 800$$^{circ}$$C. While we have confirmed that relatively good interface properties are obtained for direct AlON deposition without oxidation treatment, it was found that the oxidation treatment at 400$$^{circ}$$C leads to further improvement of interface properties and reduction of C-V hysteresis.

Journal Articles

SiO$$_{2}$$/AlON stacked gate dielectrics for AlGaN/GaN MOS heterojunction field-effect transistors

Watanabe, Kenta*; Terashima, Daiki*; Nozaki, Mikito*; Yamada, Takahiro*; Nakazawa, Satoshi*; Ishida, Masahiro*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; et al.

Japanese Journal of Applied Physics, 57(6S3), p.06KA03_1 - 06KA03_6, 2018/06

 Times Cited Count:8 Percentile:30.85(Physics, Applied)

The advantage of SiO$$_{2}$$/AlON stacked gate dielectrics over SiO$$_{2}$$, AlON and Al$$_{2}$$O$$_{3}$$ single dielectric layers was demonstrated. Our systematic research revealed that the optimized stacked structure with 3.3-nm-thick AlON interlayer is beneficial in terms of superior interface quality, reduced gate leakage current and C-V hysteresis for next-generation high frequency and high power AlGaN/GaN MOS-HFETs.

Journal Articles

Implementation of atomic layer deposition-based AlON gate dielectrics in AlGaN/GaN MOS structure and its physical and electrical properties

Nozaki, Mikito*; Watanabe, Kenta*; Yamada, Takahiro*; Shih, H.-A.*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

Japanese Journal of Applied Physics, 57(6S3), p.06KA02_1 - 06KA02_7, 2018/06

 Times Cited Count:8 Percentile:30.85(Physics, Applied)

We fabricated AlON dielectric films by repeating thin AlN deposition and in situ O$$_{3}$$ oxidation for AlGaN/GaN MOS-HFETs. Uniform nitrogen distribution is achievable by the proposed ALD-based process and that nitrogen concentration can be precisely controlled by changing AlN thickness (ALD cycle number) in each step. It was found that AlON films grown by ALD system offers significant advantages in terms of practical application while keeping superior Vth stability and electrical properties at the insulator/AlGaN interface in AlGaN/GaN MOS-HFETs.

Journal Articles

Control of Ga-oxide interlayer growth and Ga diffusion in SiO$$_{2}$$/GaN stacks for high-quality GaN-based metal-oxide-semiconductor devices with improved gate dielectric reliability

Yamada, Takahiro*; Watanabe, Kenta*; Nozaki, Mikito*; Yamada, Hisashi*; Takahashi, Tokio*; Shimizu, Mitsuaki*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Applied Physics Express, 11(1), p.015701_1 - 015701_4, 2018/01

 Times Cited Count:18 Percentile:11.8(Physics, Applied)

A simple and feasible method for fabricating high-quality and highly reliable GaN-based metal-oxide-semiconductor (MOS) devices was developed on the basis of systematic physical and electrical characterizations. Chemical vapor deposition of SiO$$_{2}$$ films directly onto GaN substrates forming Ga-oxide interlayers was used to fabricate SiO$$_{2}$$/GaO$$_{x}$$/GaN stacked structures. Although well-behaved hysteresis-free GaN-MOS capacitors with extremely low interface state density below 10$$^{10}$$cm$$^{-2}$$eV$$^{-1}$$ were obtained by post-deposition annealing, Ga diffusion into overlying SiO$$_{2}$$ layers severely degraded the insulating property and dielectric breakdown characteristics of the MOS devices. However, this problem was found to be solved by employing rapid thermal processing, leading to superior performance of the GaN-MOS devices in terms of interface quality, insulating property and gate dielectric reliability.

Journal Articles

Amount of radioactive cesium sedimentation in a soil saving dam with 3D laser scanner

Watanabe, Takayoshi; Oyama, Takuya; Ishii, Yasuo; Niizato, Tadafumi; Abe, Hironobu; Mitachi, Katsuaki; Sasaki, Yoshito

KEK Proceedings 2017-6, p.122 - 126, 2017/11

no abstracts in English

Journal Articles

Materials and Life Science Experimental Facility at the Japan Proton Accelerator Research Complex, 3; Neutron devices and computational and sample environments

Sakasai, Kaoru; Sato, Setsuo*; Seya, Tomohiro*; Nakamura, Tatsuya; To, Kentaro; Yamagishi, Hideshi*; Soyama, Kazuhiko; Yamazaki, Dai; Maruyama, Ryuji; Oku, Takayuki; et al.

Quantum Beam Science (Internet), 1(2), p.10_1 - 10_35, 2017/09

Neutron devices such as neutron detectors, optical devices including supermirror devices and $$^{3}$$He neutron spin filters, and choppers are successfully developed and installed at the Materials Life Science Facility (MLF) of the Japan Proton Accelerator Research Complex (J-PARC), Tokai, Japan. Four software components of MLF computational environment, instrument control, data acquisition, data analysis, and a database, have been developed and equipped at MLF. MLF also provides a wide variety of sample environment options including high and low temperatures, high magnetic fields, and high pressures. This paper describes the current status of neutron devices, computational and sample environments at MLF.

Journal Articles

Design and control of interface reaction between Al-based dielectrics and AlGaN Layer in AlGaN/GaN metal-oxide-semiconductor structures

Watanabe, Kenta*; Nozaki, Mikito*; Yamada, Takahiro*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

Applied Physics Letters, 111(4), p.042102_1 - 042102_5, 2017/07

 Times Cited Count:14 Percentile:23.13(Physics, Applied)

AlGaN/GaN HFET (hetero-junction field-effect transitor) has gained much attention as next-generation high frequency and high power devices. In this study, we systematically investigated the interface reaction between Al-based dielectrics (Al$$_{2}$$O$$_{3}$$ and AlON) and AlGaN layer during deposition and post-deposition annealing (PDA), and revealed high thermal stability of AlON/AlGaN interface.

Journal Articles

Translocation of radiocesium released by the Fukushima Daiichi Nuclear Power Plant accident in Japanese chestnut and chestnut weevil larvae

Sasaki, Yoshito; Ishii, Yasuo; Abe, Hironobu; Mitachi, Katsuaki; Watanabe, Takayoshi; Niizato, Tadafumi

Horticulture Journal, 86(2), p.139 - 144, 2017/04

To examine the translocation of radiocesium (Cs) scattered by the Fukushima Daiichi Nuclear Power Plant accident that occurred in March 2011 to the Japanese chestnut, we investigated the autoradiography and radiocesium concentration in each part of the Japanese chestnut. The Japanese chestnut fruit has a thin skin between the kernel (cotyledons) and shell; the kernel of the fruit is edible. $$^{137}$$Cs concentration in each part of the fruit was found to be almost the same at about 1.0$$times$$10$$^{4}$$ Bq$$cdot$$kg$$^{-1}$$. Radiocesium concentration in chestnut weevil larvae found on the fruit was approximately one-seventh of that in the kernel.

Journal Articles

Comprehensive study on initial thermal oxidation of GaN(0001) surface and subsequent oxide growth in dry oxygen ambient

Yamada, Takahiro*; Ito, Joyo*; Asahara, Ryohei*; Watanabe, Kenta*; Nozaki, Mikito*; Nakazawa, Satoshi*; Anda, Yoshiharu*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; et al.

Journal of Applied Physics, 121(3), p.035303_1 - 035303_9, 2017/01

 Times Cited Count:34 Percentile:7.7(Physics, Applied)

Initial oxidation of GaN(0001) epilayers and subsequent growth of thermal oxides in dry oxygen ambient were investigated by means of X-ray photoelectron spectroscopy, spectroscopic ellipsometry, atomic force microscopy and X-ray diffraction measurements. It was found that, whereas initial oxide formation tends to saturate at temperatures below 800$$^{circ}$$C, selective growth of small oxide grains proceeds at dislocations in the epilayers, followed by noticeable grain growth leading to rough surface morphology at higher oxidation temperatures. This indicates that oxide growth and its morphology are crucially dependent on the defect density in the GaN epilayers. Structural characterizations also revealed that polycrystalline $$alpha$$- and $$beta$$-phase Ga$$_{2}$$O$$_{3}$$ grains in an epitaxial relation with the GaN substrate are formed from the initial stage of the oxide growth. On the basis of these experimental findings, we also developed a comprehensive model for GaN oxidation mediated by nitrogen removal and mass transport.

Journal Articles

Effect of nitrogen incorporation into Al-based gate insulators in AlON/AlGaN/GaN metal-oxide-semiconductor structures

Asahara, Ryohei*; Nozaki, Mikito*; Yamada, Takahiro*; Ito, Joyo*; Nakazawa, Satoshi*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; et al.

Applied Physics Express, 9(10), p.101002_1 - 101002_4, 2016/10

 Times Cited Count:28 Percentile:12.82(Physics, Applied)

The superior physical and electrical properties of AlON gate dielectrics on AlGaN/GaN substrates in terms of thermal stability, reliability, and interface quality were demonstrated by direct AlON deposition and subsequent annealing. Nitrogen incorporation into alumina was proven to be beneficial both for suppressing intermixing at the insulator/AlGaN interface and reducing the number of electrical defects in Al$$_{2}$$O$$_{3}$$ films. Consequently, we achieved high-quality AlON/AlGaN/GaN metal-oxide-semiconductor capacitors with improved stability against charge injection and a reduced interface state density as low as 1.2$$times$$10$$^{11}$$ cm$$^{-2}$$eV$$^{-1}$$. The impact of nitrogen incorporation into the insulator was discussed on the basis of experimental findings.

Journal Articles

Synchrotron radiation X-ray photoelectron spectroscopy of Ti/Al ohmic contacts to n-type GaN; Key role of Al capping layers in interface scavenging reactions

Nozaki, Mikito*; Ito, Joyo*; Asahara, Ryohei*; Nakazawa, Satoshi*; Ishida, Masahiro*; Ueda, Tetsuzo*; Yoshigoe, Akitaka; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Applied Physics Express, 9(10), p.105801_1 - 105801_4, 2016/10

 Times Cited Count:4 Percentile:68.84(Physics, Applied)

Interface reactions between Ti-based electrodes and n-type GaN epilayers were investigated by synchrotron radiation X-ray photoelectron spectroscopy. Metallic Ga and thin TiN alloys were formed at the interface by subsequently depositing Al capping layers on ultrathin Ti layers even at room temperature. By comparing results from stacked Ti/Al and single Ti electrodes, the essential role of Al capping layers serving as an oxygen-scavenging element to produce reactive Ti underlayers was demonstrated. Further growth of the metallic interlayer during annealing was observed. A strategy for achieving low-resistance ohmic contacts to n-GaN with low-thermal-budget processing is discussed.

Journal Articles

The Transfer of radiocesium from the bark to the stemflow of chestnut trees (${it Castanea crenata}$) contaminated by radionuclides from the Fukushima Dai-ichi Nuclear Power Plant accident

Sasaki, Yoshito; Abe, Hironobu; Mitachi, Katsuaki; Watanabe, Takayoshi; Ishii, Yasuo; Niizato, Tadafumi

Journal of Environmental Radioactivity, 161, p.58 - 65, 2016/09

AA2015-0311.pdf:1.93MB

 Times Cited Count:6 Percentile:64.47(Environmental Sciences)

We report the behavior of radiocesium on the tree bark and its transfer into the stemflow of chestnut in a forest in Fukushima. The radiocesium concentration is greatest in $$phi$$2-cm stem, less in $$<$$$$phi$$5-mm stem, and least in the leaves. In the $$phi$$2-cm stem, the radiocesium concentration of the bark was approximately 10 times that of wood. The average Cs-137 concentration of the dissolved fraction of stem flow was about 10 Bq/L; the pH was nearly constant at 5.8. A strong positive correlation was observed between the radiocesium concentration and the electrical conductivity of the dissolved fraction of stemflow; this result suggests that radiocesium and electrolytes have the same elution mechanism from the tree. Some of the particles in the particulate fraction of the stem flow was strongly adsorbed radiocesium.

Journal Articles

Input and output budgets of radiocesium concerning the forest floor in the mountain forest of Fukushima released from the TEPCO's Fukushima Dai-ichi Nuclear Power Plant accident

Niizato, Tadafumi; Abe, Hironobu; Mitachi, Katsuaki; Sasaki, Yoshito; Ishii, Yasuo; Watanabe, Takayoshi

Journal of Environmental Radioactivity, 161, p.11 - 21, 2016/09

 Times Cited Count:19 Percentile:27.89(Environmental Sciences)

Estimations of radiocesium input and output budgets concerning the forest floor in a mountain forest region have been conducted in the north and central part of the Abukuma Mountains of Fukushima, after 2 to 3 year period following the TEPCO Fukushima Dai-ichi Nuclear Power Plant accident. The radiocesium input and output associated with surface washoff, throughfall, stemflow, and litterfall processes at the experimental plots have been monitored on a forest floor of evergreen Japanese cedar and deciduous Konara oak forests. The results at both monitoring locations show the radiocesium input to be 4-50 times higher than the output during the rainy season in Fukushima. These results indicate that the radiocesium tend to be preserved in the forest ecosystem due to extremely low output ratios. Thus, the associated fluxes throughout the circulation process are key issues for the projecting the environmental fate of the radiocesium levels.

Journal Articles

Comprehensive study and design of scaled metal/high-$$k$$/Ge gate stacks with ultrathin aluminum oxide interlayers

Asahara, Ryohei*; Hideshima, Iori*; Oka, Hiroshi*; Minoura, Yuya*; Ogawa, Shingo*; Yoshigoe, Akitaka; Teraoka, Yuden; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Applied Physics Letters, 106(23), p.233503_1 - 233503_4, 2015/06

 Times Cited Count:14 Percentile:34.83(Physics, Applied)

Advanced metal/high-$$k$$/Ge gate stacks with a sub-nm equivalent oxide thickness and improved interface properties were demonstrated by controlling interface reactions using ultrathin aluminum oxide (AlOx) interlayers. Comprehensive study by means of physical and electrical characterizations revealed distinct impacts of AlOx interlayers, plasma oxidation.

Journal Articles

Ozone-induced stomatal sluggishness changes carbon and water balance of temperate deciduous forests

Hoshika, Yasutomo*; Katata, Genki; Deushi, Makoto*; Watanabe, Makoto*; Koike, Takayoshi*; Paoletti, E.*

Scientific Reports (Internet), 5, p.9871_1 - 9871_8, 2015/05

 Times Cited Count:60 Percentile:5.27(Multidisciplinary Sciences)

The phytotoxic nature of tropospheric ozone can impair forest productivity and affects stomatal functions. Although a delay in stomatal responses (ozone-induced stomatal sluggishness) to fluctuating stimuli has a potential to change carbon and water balance in forests, this effect is not included in the current models for ozone risk assessment to forest. Here we examined effects of ozone-induced stomatal sluggishness on carbon gain and transpiration of global deciduous forests by combining land surface model and global atmospheric chemistry model. Ozone-induced stomatal sluggishness enhances stomatal ozone uptake resulting in facilitating a decline of forest carbon acquisition and also enhancing transpiration. Our findings are consistent with previous experimental and field observational results, indicating that forest trees suffer significant impairment of carbon and water balance through ozone-induced stomatal sluggishness.

Journal Articles

High-$$k$$/Ge gate stack with an extremely thin-EOT by controlling interface reaction using ultrathin AlO$$_{x}$$ interlayer

Tanaka, Ryohei*; Hideshima, Iori*; Minoura, Yuya*; Yoshigoe, Akitaka; Teraoka, Yuden; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

Dai-19-Kai Getosutakku KenkyuKai Yokoshu, p.5 - 8, 2014/01

105 (Records 1-20 displayed on this page)