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論文

Gamma radiation resistance of spin Seebeck devices

Yagmur, A.*; 内田 健一*; 井原 和紀*; 井岡 郁夫; 吉川 貴史*; 小野 円佳*; 遠藤 純一*; 柏木 王明*; 中島 哲也*; 桐原 明宏*; et al.

Applied Physics Letters, 109(24), p.243902_1 - 243902_4, 2016/12

https://doi.org/10.1063/1.4971976
 被引用回数：3 パーセンタイル：14.17(Physics, Applied)

スピンゼーベック効果(SSE)に基づく熱電素子の$$gamma$$線抵抗性を調べるため、約3$$times$$10$$^{5}$$Gyの$$gamma$$線照射試験を実施した。SSE素子には、Pt/Ni$$_{0.2}$$Zn$$_{0.3}$$Fe$$_{2.5}$$O$$_{4}$$/GlassとPt/Bi$$_{0.1}$$Y$$_{2.9}$$Fe$$_{5}$$O$$_{12}$$/Gd$$_{3}$$Ga$$_{5}$$O$$_{12}$$を用いた。SSE素子の熱電特性,磁気特性、構造は、$$gamma$$線照射により影響されないことを確認した。この結果は、SSE素子が厳しい照射環境でさえ熱電素子として適用可能なことを示した。

論文

Spin-current-driven thermoelectric generation based on interfacial spin-orbit coupling

Yagmur, A.*; 軽部 修太郎*; 内田 健一*; 近藤 浩太*; 井口 亮*; 吉川 貴史*; 大谷 義近*; 齊藤 英治

Applied Physics Letters, 108(24), p.242409_1 - 242409_4, 2016/06

https://doi.org/10.1063/1.4953879
 被引用回数：8 パーセンタイル：35.59(Physics, Applied)

The longitudinal spin Seebeck effect (SSE) in Bi $$_{2}$$O$$_{3}$$/Cu/yttrium-iron-garnet (YIG) devices has been investigated. When an out-of-plane temperature gradient is applied to the Bi$$_{2}$$O$$_{3}$$/Cu/YIG device, a spin current is generated across the Cu/YIG interface via the SSE and then converted into electric voltage due to the spin$-orbit coupling at the Bi$_{2}$$O$$_{3}$$/Cu interface. The sign of the SSE voltage in the Bi$$_{2}$$O$$_{3}$$/Cu/YIG devices is opposite to that induced by the conventional inverse spin Hall effect in Pt/YIG devices. The SSE voltage in the Bi$$_{2}$$O$$_{3}$$/Cu/YIG devices disappears in the absence of the Bi$$_{2}$$O$$_{3}$$layer and its thermoelectric conversion efficiency is independent of the Cu thickness, indicating the important role of the Bi$$_{2}$$O$$_{3}$$/Cu interface. This result demonstrates that not only the bulk inverse spin Hall effect but also the spin-orbit coupling near the interface can be used for SSE-based thermoelectric generation.

論文

Reducing galvanomagnetic effects in spin pumping measurement with Co$$_{75}$$Fe$$_{25}$$ as a spin injector

Haidar, S. M.*; 井口 亮*; Yagmur, A.*; Lustikova, J.*; 塩見 雄毅*; 齊藤 英治

Journal of Applied Physics, 117(18), p.183906_1 - 183906_6, 2015/05

https://doi.org/10.1063/1.4921359
 被引用回数：5 パーセンタイル：22.04(Physics, Applied)

We have investigated dc voltage generation induced by ferromagnetic resonance in a Co$$_{75}$$Fe$$_{25}$$/Pt film. In order to reduce rectification effects of anisotropic magnetoresistance and the planar Hall effect, which may be observed simultaneously with the inverse spin Hall effect, we selected Co$$_{75}$$Fe$$_{25}$$ with extremely small anisotropic magnetoresistance as a spin injector. Using the difference in the spectral shape of voltage and in the angle dependence of in-plane magnetization among the effects, we demonstrated that the generated dc voltage is governed by the inverse spin Hall effect induced by spin pumping.

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