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Gamma radiation resistance of spin Seebeck devices

スピンゼーベック素子の耐$$gamma$$線特性

Yagmur, A.*; 内田 健一*; 井原 和紀*; 井岡 郁夫; 吉川 貴史*; 小野 円佳*; 遠藤 純一*; 柏木 王明*; 中島 哲也*; 桐原 明宏*; 石田 真彦*; 齊藤 英治*

Yagmur, A.*; Uchida, Kenichi*; Ihara, Kazuki*; Ioka, Ikuo; Kikkawa, Takashi*; Ono, Madoka*; Endo, Junichi*; Kashiwagi, Kimiaki*; Nakashima, Tetsuya*; Kirihara, Akihiro*; Ishida, Masahiko*; Saito, Eiji*

スピンゼーベック効果(SSE)に基づく熱電素子の$$gamma$$線抵抗性を調べるため、約3$$times$$10$$^{5}$$Gyの$$gamma$$線照射試験を実施した。SSE素子には、Pt/Ni$$_{0.2}$$Zn$$_{0.3}$$Fe$$_{2.5}$$O$$_{4}$$/GlassとPt/Bi$$_{0.1}$$Y$$_{2.9}$$Fe$$_{5}$$O$$_{12}$$/Gd$$_{3}$$Ga$$_{5}$$O$$_{12}$$を用いた。SSE素子の熱電特性,磁気特性、構造は、$$gamma$$線照射により影響されないことを確認した。この結果は、SSE素子が厳しい照射環境でさえ熱電素子として適用可能なことを示した。

Thermoelectric devices based on the spin Seebeck effect (SSE) were irradiated with gamma ($$gamma$$) rays with the total dose of around 3$$times$$10$$^{5}$$ Gy in order to investigate the $$gamma$$-radiation resistance of the devices. To demonstrate this, Pt/Ni$$_{0.2}$$Zn$$_{0.3}$$Fe$$_{2.5}$$O$$_{4}$$/Glass and Pt/Bi$$_{0.1}$$Y$$_{2.9}$$Fe$$_{5}$$O$$_{12}$$/Gd$$_{3}$$Ga$$_{5}$$O$$_{12}$$ SSE devices were used. We confirmed that the thermoelectric, magnetic, and structural properties of the SSE devices are not affected by the $$gamma$$-ray irradiation. This result demonstrates that SSE devices are applicable to thermoelectric generation even in high radiation environments.

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パーセンタイル:100

分野:Physics, Applied

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