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論文

Hard X-ray photoemission study of bulk single-crystalline InGaZnO$$_4$$

芝田 悟朗; 他9名*

Applied Physics Letters, 126(24), p.241902_1 - 241902_6, 2025/06

https://doi.org/10.1063/5.0271655

We performed hard X-ray photoemission spectroscopy (HAXPES) experiments of bulk single-crystalline InGaZnO$$_4$$ (sc-IGZO), which was recently synthesized via the optical floating zone method, in order to reveal the bulk intrinsic electronic structure. We find that oxygen vacancies are preferentially located around In atoms in as-grown crystals, which are filled out by post-annealing in an oxygen atmosphere. The subgap states near the valence-band maximum (VBM) were much weaker than those in the previous study even without oxygen annealing, which suggests that the loss of crystallinity is relevant to the formation of them in addition to the oxygen vacancies.

論文

Spin-current volume effect on iron gallium films

Huang, Y.-C.*; 吉川 貴史; 他5名*

Applied Physics Letters, 126(9), p.092403_1 - 092403_6, 2025/03

https://doi.org/10.1063/5.0239164
 被引用回数：0 パーセンタイル：0.00(Physics, Applied)

The application of spin-current volume effect (SVE) with volume magnetostriction of iron gallium (FeGa) films is examined for micro-diaphragm actuation. A silicon diaphragm measuring 1.5$$times$$1.5 mm$$^{2}$$ is coated with Pt (100-nm-thick) and FeGa (100-nm-thick) thin films. An alternating charge current passed through the FeGa/Pt/Si diaphragm under a magnetic field perpendicular to the charge current generates an alternating spin current via the spin Hall effect in the Pt film, transferring angular momentum from the Pt film to the FeGa film. The injected spin current provides energy and changes the effective temperature, thereby varying the thermal fluctuation of the magnetic moments. In a magnetic material with volume magnetostriction, the thermal fluctuation of the magnetic moments affects its volume. When the spin fluctuations change, the volume magnetostriction induces a corresponding expansion or contraction of the material. Both electrodeposited and ion-beam sputter-deposited FeGa films are investigated, and it is observed that the FeGa film exhibits SVE. The force generated by the SVE is evaluated based on the vibration amplitude at the fundamental resonant mode. This study demonstrates that the force generated by the SVE is correlated with the volume magnetostriction and the deposition process.

論文

Electric field-induced nonreciprocal spin current due to chiral phonons in chiral-structure superconductors

Yao, D.*; 松尾 衛; 横山 毅人*

Applied Physics Letters, 124(16), p.162603_1 - 162603_5, 2024/04

https://doi.org/10.1063/5.0207915
 被引用回数：4 パーセンタイル：82.03(Physics, Applied)

We propose a mechanism of spin current generation under an external electric field due to chiral phonons in a chiral-structure superconductor based on the Bogoliubov de Gennes and the Boltzmann equations.

論文

Atomic position and the chemical state of an active Sn dopant for Sn-doped $$beta$$-Ga$$_{2}$$O$$_{3}$$(001)

Tsai, Y. H.*; 小畠 雅明; 福田 竜生; 谷田 肇; 小林 徹; 山下 良之*

Applied Physics Letters, 124(11), p.112105_1 - 112105_5, 2024/03

https://doi.org/10.1063/5.0198160
 被引用回数：2 パーセンタイル：62.71(Physics, Applied)

Recently, gallium oxide (Ga$$_{2}$$O$$_{3}$$) has attracted much attention as an ultra-wide bandgap semiconductor with a bandgap of about 5 eV. In order to control device properties, it is important to clarify the chemical state of dopants and doping sites. X-ray absorption near edge structure (XANES) and hard X-ray photoemission spectroscopy were used to investigate the dopant sites and chemical states of Sn in Sn-doped $$beta$$-Ga$$_{2}$$O$$_{3}$$(001) samples. The results show that the chemical state of the Sn dopant is the Sn$$^{4+}$$ oxidation state and that the bond lengths around the Sn dopant atoms are longer due to the relaxation effect after Sn dopant insertion. Comparison of experimental and simulated XANES spectra indicates that the octahedral Ga substitution site in $$beta$$-Ga$$_{2}$$O$$_{3}$$(001) is the active site of the Sn dopant.

論文

Understanding spin currents from magnon dispersion and polarization; Spin-Seebeck effect and neutron scattering study on Tb$$_3$$Fe$$_5$$O$$_{12}$$

川本 陽*; 吉川 貴史; 齊藤 英治; 他9名*

Applied Physics Letters, 124(13), p.132406_1 - 132406_7, 2024/03

https://doi.org/10.1063/5.0197831
 被引用回数：4 パーセンタイル：82.03(Physics, Applied)

Magnon spin currents in the ferrimagnetic garnet Tb$$_{3}$$Fe$$_{5}$$O$$_{12}$$ with 4$$f$$ electrons were examined through the spin-Seebeck effect and neutron scattering measurements. The compound shows a magnetic compensation, where the spin-Seebeck signal reverses above and below $$T$$$$_{rm comp}$$ = 249.5(4) K. Unpolarized neutron scattering unveils two major magnon branches with finite energy gaps, which are well explained in the framework of spin-wave theory. Their temperature dependencies and the direction of the precession motion of magnetic moments, i.e., magnon polarization, defined using polarized neutrons, explain the reversal at $$T$$$$_{rm comp}$$ and decay of the spin-Seebeck signals at low temperatures. We illustrate an example that momentum- and energy-resolved microscopic information is a prerequisite to understand the magnon spin current.

論文

Inelastic neutron scattering study of magnon excitation by ultrasound injection in yttrium iron garnet

社本 真一; 赤津 光洋*; Chang, L.-J.*; 根本 祐一*; 家田 淳一

Applied Physics Letters, 124(11), p.112402_1 - 112402_5, 2024/03

https://doi.org/10.1063/5.0189768
 被引用回数：1 パーセンタイル：40.97(Physics, Applied)

Y$$_3$$Fe$$_5$$O$$_{12}$$における超音波注入によるマグノン励起を非弾性中性子散乱によって研究した。その結果、縦波と横波の両方で超音波注入によりマグノン励起の非弾性中性子散乱強度が増強されることがわかった。

論文

Revealing the role of high-valence elementary substitution in the hydrogen-induced Mottronic transitions of vanadium dioxide

Zhou, X.*; 福谷 克之; 他9名*

Applied Physics Letters, 124(8), p.082103_1 - 082103_7, 2024/02

https://doi.org/10.1063/5.0189271
 被引用回数：6 パーセンタイル：89.50(Physics, Applied)

Electron-doping Mottronics within correlated vanadium dioxide opens up a paradigm to abruptly regulate the Mottronic phase transitions via adjusting the $$d$$-orbital occupancy and configuration. Nevertheless, the potential impact of high-valence elementary substitution in the hydrogen-associated Mottronic transitions of VO$$_{2}$$ is yet unclear. Herein, we demonstrate the role of high-valence elementary substitution in regulating the hydrogen-triggered Mottronic transitions of VO$$_{2}$$, assisted by quantitative hydrogen analysis using the nuclear reaction analysis. Substituting vanadium with a high-valence transitional metal within doped-VO$$_{2}$$ largely reduces the hydrogen incorporation compared to the intrinsic VO$$_{2}$$ under the low temperature hydrogenation process. Therefore, in contrast to hydrogen-induced electron localization of intrinsic VO$$_{2}$$ upon low-temperature hydrogenation, only the hydrogen-triggered metallic state is observed within the hydrogen-associated phase diagram of W$$_{x}$$V$$_{1-x}$$O$$_{2}$$, as further probed by the near-edge X-ray absorption fine structure analysis and X-ray photoelectron spectroscopy. The present work reveals the overlooked role associated with the donor substitutions that largely influences the competitive equilibrium between the two rival hydrogen-induced Mottronic transitions within VO$$_{2}$$ toward either the metallic or the highly insulating phase.

論文

Emergent magneto-inductance effect in permalloy thin films on flexible polycarbonate substrates at room temperature

松島 悠*; Zhang, Z.*; 大橋 由梨*; 畠山 紘*; Xiao, G.*; 船戸 匠*; 松尾 衛; 海住 英生*

Applied Physics Letters, 124(2), p.022404_1 - 022404_7, 2024/01

https://doi.org/10.1063/5.0181272
 被引用回数：3 パーセンタイル：74.90(Physics, Applied)

We report the discovery of a stepwise magnetic field-induced emergent magneto-inductance effect in Permalloy thin films deposited on polycarbonate substrates. This study opens up exciting avenues for advancing our understanding of emergent inductance in fundamental physics and paves the way for practical applications in flexible magnetic devices.

論文

${it In situ}$ neutron diffraction study on the deformation behavior of the plastic inorganic semiconductor Ag$$_{2}$$S

Wang, Y.*; Gong, W.; 川崎 卓郎; Harjo, S.; Zhang, K.*; Zhang, Z. D.*; Li, B.*

Applied Physics Letters, 123(1), p.011903_1 - 011903_6, 2023/07

https://doi.org/10.1063/5.0158607
 被引用回数：4 パーセンタイル：50.15(Physics, Applied)

Bulk Ag$$_{2}$$S is a plastic inorganic semiconductor at room temperature. It exhibits a compressive strain greater than 50%, which is highly different from brittle conventional counterparts, such as silicon. Here, we present the experimental investigation of the deformation behavior in a plastic inorganic semiconductor Ag$$_{2}$$S using ${it in situ}$ neutron diffraction during compressive deformation at room and elevated temperatures. At room temperature, the lattice strain partitioning among $$hkl$$-orientated grain families could be responsible for the significant work-hardening behavior in the bulk Ag$$_{2}$$S with a monoclinic structure. The rapid accumulation of lattice defects and remarkable development of the deformation texture suggest that dislocation slip promotes plasticity. At 453 K, a monoclinic phase transforms into a body-centered cubic phase. A stress plateau appears at $$sim$$-4.8 MPa, followed by a rehardening state. The deformation mode of bulk Ag$$_{2}$$S at the initial stage is likely attributable to the migration of silver ions, and as strain increases, it is closer to that of room temperature, leading to rehardening.

論文

Step unbunching phenomenon on 4H-SiC (0001) surface during hydrogen etching

榊原 涼太郎*; Bao, J.*; Yuhara, Keisuke*; 松田 啓太*; 寺澤 知潮; 楠 美智子*; 乗松 航*

Applied Physics Letters, 123(3), p.031603_1 - 031603_4, 2023/07

https://doi.org/10.1063/5.0153565
 被引用回数：3 パーセンタイル：39.87(Physics, Applied)

ステップバンチング現象の逆であるステップアンバンチング現象について報告する。4H-SiC(0001)表面を高温でアニールすると、隣接するステップの運動の速度が異なるためにステップバンチングが生じ、数ナノメートル以上の高さのステップが生じる。本研究ではAr/H$$_{2}$$雰囲気中での水素エッチングによって得られたステップが、その後低温でアニールされると、より低い高さのステップに「アンバンチング」されることを見出した。この「束にならない」現象は、エネルギー論と動力学との間の競合の結果としてうまく説明できる。本発見は、水素エッチングによるSiCの表面平滑化のための別のアプローチを提供し、SiCパワーデバイスや二次元材料成長技術全般への応用に重要な洞察を与える可能性がある。

論文

Magnetization switching process by dual spin-orbit torque in interlayer exchange-coupled systems

増田 啓人*; 山根 結太*; 関 剛斎*; Raab, K.*; 土肥 昂尭*; Modak, R.*; 内田 健一*; 家田 淳一; Kl$"a$ui, M.*; 高梨 弘毅

Applied Physics Letters, 122(16), p.162402_1 - 162402_7, 2023/04

https://doi.org/10.1063/5.0140328
 被引用回数：3 パーセンタイル：39.87(Physics, Applied)

We report current-induced magnetization switching in Pt/Co/Ir/Co/Pt multilayers with different Ir layer thicknesses ($$t_mathrm{Ir}$$), where the perpendicularly magnetized Co layers are coupled ferromagnetically or antiferromagnetically through an interlayer exchange coupling and are sandwiched by the Pt spin Hall layers. The domain structures formed during switching vary depending on the magnetization alignment, i.e., ferromagnetically coupled or antiferromagnetically coupled configuration. These results clarify the macroscopic picture of switching process for interlayer exchange-coupled systems. The local picture of the switching process is also examined by a numerical calculation based on a macrospin model, which reveals the switching dynamics triggered by dual spin-orbit torque for both antiferromagnetically and ferromagnetically coupled cases. The numerical calculation shows that the dual spin-orbit torque from the two Pt layers effectively acts on the two Co layers not only for the antiferromagnetically coupled case but also for the ferromagnetically coupled one. Our findings deepen the under- standing of the switching mechanism in a magnetic multilayer and provide an avenue to design spintronic devices with more efficient spin-orbit torque switching.

論文

Work function lowering of LaB$$_{6}$$ by monolayer hexagonal boron nitride coating for improved photo- and thermionic-cathodes

山口 尚登*; 遊佐 龍之介*; Wang, G.*; Pettes, M. T.*; Liu, F.*; 津田 泰孝; 吉越 章隆; 虻川 匡司*; Moody, N. A.*; 小川 修一*

Applied Physics Letters, 122(14), p.141901_1 - 141901_7, 2023/04

https://doi.org/10.1063/5.0142591
 被引用回数：6 パーセンタイル：64.95(Physics, Applied)

単層BMをコートしたLaB$$_{6}$$の仕事関数の低減に関して報告する。hBNでコートされた領域は、非被覆あるいはグラフェンコートされたLaB$$_{6}$$(100)単結晶領域に比べて仕事関数が低下していることが、光電子顕微鏡(PEEM)および熱電子顕微鏡(TEEM)実験から分かった。グラフェンコートに比べてhBNコートされたLaB$$_{6}$$(100)では、非常に大きな仕事関数の低下が起きることが、DFT計算から定性的に分かった。計算に酸化層を考慮すると、計算と実験の間の整合性が改善された。放射光XPSによって、我々のLaB$$_{6}$$表面に酸化層が実在することを確認した。

論文

Thermal stability of non-collinear antiferromagnetic Mn$$_3$$Sn nanodot

佐藤 佑磨*; 竹内 祐太郎*; 山根 結太*; Yoon, J.-Y.*; 金井 駿*; 家田 淳一; 大野 英男*; 深見 俊輔*

Applied Physics Letters, 122(12), p.122404_1 - 122404_5, 2023/03

https://doi.org/10.1063/5.0135709
 被引用回数：5 パーセンタイル：58.52(Physics, Applied)

$$D0_{19}$$-Mn$$_3$$Sn, an antiferromagnet having a non-collinear spin structure in a kagome lattice, has attracted great attention owing to various intriguing properties such as large anomalous Hall effect. Stability of magnetic state against thermal fluctuation, characterized in general by the thermal stability factor $$Delta$$, has been well studied in ferromagnetic systems but not for antiferromagnets. Here we study $$Delta$$ of the antiferromagnetic Mn$$_3$$Sn nanodots as a function of their diameter $$D$$. To obtain $$Delta$$, we measure the switching probability as a function of pulse-field amplitude and analyze the results based on a model developed by accounting for two and six-fold magnetic anisotropies in the kagome plane. We observe no significant change in $$Delta$$ down to $$D = 300$$ nm below which it decreases with $$D$$. The obtained $$D$$ dependence is well explained by a single-domain and nucleation-mediated reversal models. These findings provide a basis to understand the thermal fluctuation and reversal mechanism of antiferromagnets for device application.

論文

Shapiro steps in charge-density-wave states driven by ultrasound

森 道康; 前川 禎通

Applied Physics Letters, 122(4), p.042202_1 - 042202_5, 2023/01

https://doi.org/10.1063/5.0132454
 被引用回数：4 パーセンタイル：50.15(Physics, Applied)

We show that ultrasound can induce the Shapiro steps (SS) in the charge-density-wave (CDW) state. When ultrasound with frequency $$omega$$ and a dc voltage are applied, the SS occur at the current $$Ipropto nomega$$ with integer $$n$$. Even and odd multiples of SS are represented by two couplings between the CDW and ultrasound. Although an ac voltage bias with frequency $$omega$$ induces the SS at $$Ipropto nomega$$, the ultrasound bias enhances the odd multiples more strongly than the even ones. This is the difference between the ultrasound and the ac voltage. Since the SS cause abrupt peaks in the $$dV/dI$$, the extreme changes in the $$I-V$$ curve will be applied to a very sensitive ultrasound detector.

論文

Spin motive force induced by parametric excitation

星 幸治郎*; 日置 友智*; 齊藤 英治

Applied Physics Letters, 121(21), p.212404_1 - 212404_6, 2022/11

https://doi.org/10.1063/5.0129466
 被引用回数：4 パーセンタイル：34.41(Physics, Applied)

Spin motive force generated by parametrically excited magnetization dynamics is numerically investigated. We calculate spin motive force in a permalloy disk under an ac magnetic field with twice the ferromagnetic resonance frequency parallel to the static magnetic field based on the Landau-Lifshitz-Gilbert equation. We found that large spin motive force originating from standing spin waves driven by parametric excitation appears in the system. The observed time dependence of the voltage shows a dc voltage with an ac component oscillating with twice of the resonance frequency. The estimated amplitude of the voltage due to the spin motive force is $$sim$$$$mu$$V. We also investigate spin motive force driven by different modes of standing spin waves. Our numerical results extend the way to generate spin motive force by making use of the magnetization dynamics with the steep spatial modulation created by nonlinear spin waves excitation, without a nonuniform magnetization structure such as a conventional magnetic domain wall and a vortex.

論文

Real-space observation of standing spin-wave modes in a magnetic disk

日置 友智*; 齊藤 英治; 他3名*

Applied Physics Letters, 121(13), p.132402_1 - 132402_5, 2022/09

https://doi.org/10.1063/5.0098772
 被引用回数：0 パーセンタイル：0.00(Physics, Applied)

In-plane standing spin-wave modes in a minute magnetic disk are directly observed by using time-resolved magneto-optical microscopy synchronized with microwaves. The time-resolved microscopy allowed us to obtain snapshots of standing spin-wave modes in a magnetic disk, which show a hourglass-like standing spin wave pattern. We found that the characteristic pattern is caused by spatially nonuniform magnetization and a strong microwave excitation in terms of finite element calculation and micromagnetic simulations. The technique we developed in this work allows us to access magnetization dynamics in microstructured magnets under strong microwave pumping.

論文

Electrical properties and energy band alignment of SiO$$_{2}$$/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN(000$$bar{1}$$) substrates

溝端 秀聡*; 冨ヶ原 一樹*; 野崎 幹人*; 小林 拓真*; 吉越 章隆; 細井 卓治*; 志村 考功*; 渡部 平司*

Applied Physics Letters, 121(6), p.062104_1 - 062104_6, 2022/08

https://doi.org/10.1063/5.0095468
 被引用回数：1 パーセンタイル：7.32(Physics, Applied)

N極性GaN(000$$bar{1}$$)基板上に作製したSiO$$_{2}$$/GaN MOS構造の界面特性とエネルギーバンドアライメントを、電気測定と放射光X線光電子分光法を用いて調べた。さらに、得られた結果をGa極性GaN(0001)上のSiO$$_{2}$$/GaN MOS構造の特性と比較した。SiO$$_{2}$$/GaN(000$$bar{1}$$)構造はGaN(0001)基板上に作製した構造よりも熱的に不安定であることがわかった。しかし、絶縁膜堆積後アニールの条件を最適化することにより、SiO$$_{2}$$/GaN(000$$bar{1}$$)構造でも優れた電気特性が得られた。一方で、SiO$$_{2}$$/GaN(000$$bar{1}$$)構造の伝導帯オフセットがSiO$$_{2}$$/GaN(0001)構造よりも小さく、これによるゲートリーク電流の増大が見られた。以上のことから、MOSデバイスの作製においてN極性GaN(000$$bar{1}$$)基板の利用には注意を要することを明らかにした。

論文

Perspectives on spintronics with surface acoustic waves

Puebla, J.*; Hwang, Y.*; 前川 禎通*; 大谷 義近*

Applied Physics Letters, 120(22), p.220502_1 - 220502_9, 2022/05

https://doi.org/10.1063/5.0093654
 被引用回数：36 パーセンタイル：93.54(Physics, Applied)

Surface acoustic waves (SAWs) are elastic waves propagating on the surface of solids with the amplitude decaying into the solid. The well- established fabrication of compact SAW devices, together with well-defined resonance frequencies, places SAWs as an attractive route to manipulate the magnetization states in spintronics, all of which is made possible by the magnetostriction and magnetoelastic effects. Here, we review the basic characteristics of SAW devices and their interaction out-of-resonance and in-resonance with the magnetization in thin films. We describe our own recent results in this research field and closely related works and provide our perspectives moving forward.

論文

Observation of domain structure in non-collinear antiferromagnetic Mn$$_3$$Sn thin films by magneto-optical Kerr effect

内村 友宏*; Yoon, J.-Y.*; 佐藤 佑磨*; 竹内 祐太郎*; 金井 駿*; 武智 涼太*; 岸 桂輔*; 山根 結太*; DuttaGupta, S.*; 家田 淳一; et al.

Applied Physics Letters, 120(17), p.172405_1 - 172405_5, 2022/04

https://doi.org/10.1063/5.0089355
 被引用回数：24 パーセンタイル：88.93(Physics, Applied)

We perform a hysteresis-loop measurement and domain imaging for $$(1100)$$-oriented $$D0_{19}$$-Mn$$_{3+x}$$Sn$$_{1-x}$$ $$(-0.11 le x le 0.14)$$ thin films using magneto-optical Kerr effect (MOKE) and compare it with the anomalous Hall effect (AHE) measurement. We obtain a large Kerr rotation angle of 10 mdeg., comparable with bulk single-crystal Mn$$_3$$Sn. The composition $$x$$ dependence of AHE and MOKE shows a similar trend, suggesting the same origin, i.e., the non-vanishing Berry curvature in the momentum space. Magnetic domain observation at the saturated state shows that x dependence of AHE and MOKE is explained by an amount of reversible area that crucially depends on the crystalline structure of the film. Furthermore, in-depth observation of the reversal process reveals that the reversal starts with nucleation of sub-micrometer-scale domains dispersed in the film, followed by a domain expansion, where the domain wall preferentially propagates along the $$[11bar{2}0]$$ direction. Our study provides a basic understanding of the spatial evolution of the reversal of chiral-spin structure in non-collinear antiferromagnetic thin films.

論文

Fabrication of (Bi$$_2$$)$$_m$$(Bi$$_2$$Te$$_3$$)$$_n$$ superlattice films by Te desorption from a pristine Bi$$_2$$Te$$_3$$ film

日下 翔太郎*; 佐々木 泰祐*; 角田 一樹; 一ノ倉 聖*; 出田 真一郎*; 田中 清尚*; 宝野 和博*; 平原 徹*

Applied Physics Letters, 120(17), p.173102_1 - 173102_5, 2022/04

https://doi.org/10.1063/5.0090207
 被引用回数：4 パーセンタイル：34.41(Physics, Applied)

We fabricated superlattice films composed of Bi$$_2$$ bilayers (BLs) and Bi$$_2$$Te$$_3$$ quintuple layers (QLs) by annealing pure Bi$$_2$$Te$$_3$$ films. It was found that Te desorbs from the QL to form the BL with an activation energy of 2.7 eV. Eventually two distinct stoichiometric phases were formed, Bi$$_1$$Te$$_1$$ (QL-BL-QL) and Bi$$_4$$Te$$_3$$ (QL-BL), as evidenced by scanning transmission emission microscopy measurements. The surface-state dispersion was measured with angle-resolved photoemission spectroscopy and the topological nature of each sample is discussed. Our method offers a convenient and simple way to fabricate superlattice films with different topological properties.

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