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論文

Shapiro steps in charge-density-wave states driven by ultrasound

森 道康; 前川 禎通

Applied Physics Letters, 122(4), p.042202_1 - 042202_5, 2023/01

https://doi.org/10.1063/5.0132454
 被引用回数：0 パーセンタイル：0.01(Physics, Applied)

We show that ultrasound can induce the Shapiro steps (SS) in the charge-density-wave (CDW) state. When ultrasound with frequency $$omega$$ and a dc voltage are applied, the SS occur at the current $$Ipropto nomega$$ with integer $$n$$. Even and odd multiples of SS are represented by two couplings between the CDW and ultrasound. Although an ac voltage bias with frequency $$omega$$ induces the SS at $$Ipropto nomega$$, the ultrasound bias enhances the odd multiples more strongly than the even ones. This is the difference between the ultrasound and the ac voltage. Since the SS cause abrupt peaks in the $$dV/dI$$, the extreme changes in the $$I-V$$ curve will be applied to a very sensitive ultrasound detector.

論文

Electrical properties and energy band alignment of SiO$$_{2}$$/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN(000$$bar{1}$$) substrates

溝端 秀聡*; 冨ヶ原 一樹*; 野崎 幹人*; 小林 拓真*; 吉越 章隆; 細井 卓治*; 志村 考功*; 渡部 平司*

Applied Physics Letters, 121(6), p.062104_1 - 062104_6, 2022/08

https://doi.org/10.1063/5.0095468

N極性GaN(000$$bar{1}$$)基板上に作製したSiO$$_{2}$$/GaN MOS構造の界面特性とエネルギーバンドアライメントを、電気測定と放射光X線光電子分光法を用いて調べた。さらに、得られた結果をGa極性GaN(0001)上のSiO$$_{2}$$/GaN MOS構造の特性と比較した。SiO$$_{2}$$/GaN(000$$bar{1}$$)構造はGaN(0001)基板上に作製した構造よりも熱的に不安定であることがわかった。しかし、絶縁膜堆積後アニールの条件を最適化することにより、SiO$$_{2}$$/GaN(000$$bar{1}$$)構造でも優れた電気特性が得られた。一方で、SiO$$_{2}$$/GaN(000$$bar{1}$$)構造の伝導帯オフセットがSiO$$_{2}$$/GaN(0001)構造よりも小さく、これによるゲートリーク電流の増大が見られた。以上のことから、MOSデバイスの作製においてN極性GaN(000$$bar{1}$$)基板の利用には注意を要することを明らかにした。

論文

Observation of domain structure in non-collinear antiferromagnetic Mn$$_3$$Sn thin films by magneto-optical Kerr effect

内村 友宏*; Yoon, J.-Y.*; 佐藤 佑磨*; 竹内 祐太郎*; 金井 駿*; 武智 涼太*; 岸 桂輔*; 山根 結太*; DuttaGupta, S.*; 家田 淳一; et al.

Applied Physics Letters, 120(17), p.172405_1 - 172405_5, 2022/04

https://doi.org/10.1063/5.0089355
 被引用回数：3 パーセンタイル：85.27(Physics, Applied)

We perform a hysteresis-loop measurement and domain imaging for $$(1100)$$-oriented $$D0_{19}$$-Mn$$_{3+x}$$Sn$$_{1-x}$$ $$(-0.11 le x le 0.14)$$ thin films using magneto-optical Kerr effect (MOKE) and compare it with the anomalous Hall effect (AHE) measurement. We obtain a large Kerr rotation angle of 10 mdeg., comparable with bulk single-crystal Mn$$_3$$Sn. The composition $$x$$ dependence of AHE and MOKE shows a similar trend, suggesting the same origin, i.e., the non-vanishing Berry curvature in the momentum space. Magnetic domain observation at the saturated state shows that x dependence of AHE and MOKE is explained by an amount of reversible area that crucially depends on the crystalline structure of the film. Furthermore, in-depth observation of the reversal process reveals that the reversal starts with nucleation of sub-micrometer-scale domains dispersed in the film, followed by a domain expansion, where the domain wall preferentially propagates along the $$[11bar{2}0]$$ direction. Our study provides a basic understanding of the spatial evolution of the reversal of chiral-spin structure in non-collinear antiferromagnetic thin films.

論文

Fabrication of (Bi$$_2$$)$$_m$$(Bi$$_2$$Te$$_3$$)$$_n$$ superlattice films by Te desorption from a pristine Bi$$_2$$Te$$_3$$ film

日下 翔太郎*; 佐々木 泰祐*; 角田 一樹; 一ノ倉 聖*; 出田 真一郎*; 田中 清尚*; 宝野 和博*; 平原 徹*

Applied Physics Letters, 120(17), p.173102_1 - 173102_5, 2022/04

https://doi.org/10.1063/5.0090207
 被引用回数：1 パーセンタイル：55.51(Physics, Applied)

We fabricated superlattice films composed of Bi$$_2$$ bilayers (BLs) and Bi$$_2$$Te$$_3$$ quintuple layers (QLs) by annealing pure Bi$$_2$$Te$$_3$$ films. It was found that Te desorbs from the QL to form the BL with an activation energy of 2.7 eV. Eventually two distinct stoichiometric phases were formed, Bi$$_1$$Te$$_1$$ (QL-BL-QL) and Bi$$_4$$Te$$_3$$ (QL-BL), as evidenced by scanning transmission emission microscopy measurements. The surface-state dispersion was measured with angle-resolved photoemission spectroscopy and the topological nature of each sample is discussed. Our method offers a convenient and simple way to fabricate superlattice films with different topological properties.

論文

Martensitic transformation in CrCoNi medium-entropy alloy at cryogenic temperature

Naeem, M.*; Zhou, H.*; He, H.*; Harjo, S.; 川崎 卓郎; Lan, S.*; Wu, Z.*; Zhu, Y.*; Wang, X.-L.*

Applied Physics Letters, 119(13), p.131901_1 - 131901_7, 2021/09

https://doi.org/10.1063/5.0067268
 被引用回数：5 パーセンタイル：65.58(Physics, Applied)

We investigated the in situ deformation behavior of the CrCoNi medium-entropy alloy at a cryogenic temperature of 140 K and compared it with deformation at room temperature. The sample exhibited higher strength and larger ductility at the cryogenic temperature. The CrCoNi alloy remained single-phase face-centered cubic at room temperature, while deformation at 140 K resulted in a martensitic transformation to the hexagonal close-packed structure. The phase transformation, an additional deformation mechanism to stacking faults, twinning, and dis- location slip, resulted in a higher work hardening at cryogenic temperature. The study addresses the structure metastability in the CrCoNi alloy, which led to the formation of epsilon-martensite from the intrinsic stacking faults.

論文

Evaluation of edge domains in giant magnetoresistive junctions

Frost, W.*; 関 剛斎*; 窪田 崇秀*; Ramos, R.*; 齊藤 英治; 高梨 弘毅*; 廣畑 貴文*

Applied Physics Letters, 118(17), p.172405_1 - 172405_5, 2021/04

https://doi.org/10.1063/5.0049315
 被引用回数：0 パーセンタイル：0(Physics, Applied)

We demonstrate that the spin-Seebeck effect can be used to estimate the volume of edge domains formed in a giant magnetoresistive (GMR) device. The thermal gradient induced by Joule heating can be harnessed by the addition of a ferromagnetically insulating channel of Fe$$_2$$O$$_3$$ on the sides of the GMR pillar. This generates a spin wave in Fe$$_2$$O$$_3$$, which couples with the free-layer edge magnetization and controls the reversal of the ferromagnetic layers in one direction only, increasing the current density from $$(1.1pm0.1)times10^7$$ A/cm$$^2$$ to $$(7.0pm0.5)times10^7$$ A/cm$$^2$$. By simple assumption, we estimate the effect of the edge domain on magnetization reversal to be $$10%-15%$$ by spin-transfer torque.

論文

Observation of quantum interference conductance fluctuations in metal rings with strong spin-orbit coupling

Ramos, R.*; 巻内 崇彦*; 吉川 貴史*; 大門 俊介*; 大柳 洸一*; 齊藤 英治

Applied Physics Letters, 117(24), p.242402_1 - 242402_5, 2020/12

https://doi.org/10.1063/5.0031708
 被引用回数：1 パーセンタイル：8.35(Physics, Applied)

We investigated the magnetotransport properties of mesoscopic platinum nanostructures (wires and rings) with sub-100 nm lateral dimensions at very low temperatures. Despite the strong spin-orbit interaction in platinum, oscillation of the conductance as a function of the external magnetic field due to quantum interference effects was found to appear. The oscillation was decomposed into Aharonov-Bohm periodic oscillations and aperiodic fluctuations of the conductance due to a magnetic flux piercing the loop of the ring and the metal wires forming the nanostructures, respectively. We also investigated the magnetotransport under different bias currents to explore the interplay between electron phase coherence and spin accumulation effects in strong spin-orbit conductors.

論文

Concurrent magneto-optical imaging and magneto-transport readout of electrical switching of insulating antiferromagnetic thin films

Schreiber, F.*; Baldrati, L.*; Schmitt, C.*; Ramos, R.*; 齊藤 英治; Lebrun, R.*; Kl$"a$ui, M.*

Applied Physics Letters, 117(8), p.082401_1 - 082401_5, 2020/08

https://doi.org/10.1063/5.0011852
 被引用回数：19 パーセンタイル：84.56(Physics, Applied)

We demonstrate stable and reversible current induced switching of large-area ($$>$$100 $$mu$$m$$^2$$) antiferromagnetic domains in NiO/Pt by performing concurrent transport and magneto-optical imaging measurements in an adapted Kerr microscope. By correlating the magnetic images of the antiferromagnetic domain changes and magneto-transport signal response in these current-induced switching experiments, we disentangle magnetic and non-magnetic contributions to the transport signal. Our table-top approach establishes a robust procedure to subtract the non-magnetic contributions in the transport signal and extract the spin-Hall magnetoresistance response associated with the switching of the antiferromagnetic domains, enabling one to deduce details of the antiferromagnetic switching from simple transport measurements.

論文

Electric field effect on the magnetic domain wall creep velocity in Pt/Co/Pd structures with different Co thicknesses

小山 知弘*; 家田 淳一; 千葉 大地*

Applied Physics Letters, 116(9), p.092405_1 - 092405_5, 2020/03

AA2019-0550.pdf:0.91MB

https://doi.org/10.1063/1.5143970
 被引用回数：3 パーセンタイル：27.73(Physics, Applied)

The electric field (EF) modulation of magnetic domain wall (DW) creep velocity $$v$$ in Pt/Co/Pd structure with perpendicular magnetic anisotropy (MA) has been studied. The structures with different Co thickness $$t_mathrm{Co}$$ up to $$sim 1$$ nm are investigated. In all samples, applying a gate voltage induces a clear change in $$v$$. Thicker samples provide a higher $$v$$ modulation efficiency, and the $$v$$ modulation magnitude of more than a factor of 100 times is observed in the thickest $$t_mathrm{Co}$$ of 0.98 nm. The parameter characterizing the creep motion is significantly affected by the EF, resulting in the modulation of $$v$$. Unlike the $$v$$ case, the MA modulation efficiency decreases with increasing $$t_mathrm{Co}$$. The present results are discussed based on the EF-induced change in the interfacial Dzyaloshinskii-Moriya interaction (iDMI), which has been recently demonstrated in the same structure, and $$t_mathrm{Co}$$ dependence of the DW energy. The $$t_mathrm{Co}$$ dependence of the $$v$$ modulation suggests that the EF effect on the iDMI is more important than the MA.

論文

Absence of evidence of spin transport through amorphous Y$$_3$$Fe$$_5$$O$$_{12}$$

Gomez-Perez, J. M.*; 大柳 洸一*; 八尋 黎明*; Ramos, R.*; Hueso, L. E.*; 齊藤 英治; Casanova, F.*

Applied Physics Letters, 116(3), p.032401_1 - 032401_5, 2020/01

https://doi.org/10.1063/1.5119911
 被引用回数：8 パーセンタイル：61.16(Physics, Applied)

We probe the current-induced magnetic switching of insulating antiferromagnet-heavy-metal systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We observe switching of more than one-third of the antiferromagnetic domains by the application of current pulses. Our data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely, the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.

論文

Polaronic nature of a muonium-related paramagnetic center in SrTiO$$_3$$

伊藤 孝; 髭本 亘; 幸田 章宏*; 下村 浩一郎*

Applied Physics Letters, 115(19), p.192103_1 - 192103_4, 2019/11

https://doi.org/10.1063/1.5125919
 被引用回数：6 パーセンタイル：39.88(Physics, Applied)

The hyperfine features and thermal stability of a muonium (Mu)-related paramagnetic center were investigated in the SrTiO$$_3$$ perovskite titanate via muon spin rotation spectroscopy. The hyperfine coupling tensor of the paramagnetic center was found to have prominent dipolar characteristics, indicating that the electron spin density is dominantly distributed on a Ti site to form a small polaron near an ionized Mu$$^+$$ donor. Based on a hydrogen-Mu analogy, interstitial hydrogen is also expected to form such a polaronic center in the dilute doping limit. The small activation energy of 30(3) meV found for the thermal dissociation of the Mu$$^+$$-polaron complex suggests that the strain energy required to distort the lattice is comparable to the electronic energy gained by localizing the electron.

論文

Angular momentum compensation manipulation to room temperature of the ferrimagnet Ho$$_{3-x}$$Dy$$_{x}$$Fe$$_5$$O$$_{12}$$ detected by the Barnett effect

今井 正樹; 中堂 博之; 小野 正雄; 針井 一哉; 松尾 衛; 大沼 悠一*; 前川 禎通; 齊藤 英治

Applied Physics Letters, 114(16), p.162402_1 - 162402_4, 2019/04

https://doi.org/10.1063/1.5095166
 被引用回数：17 パーセンタイル：73.44(Physics, Applied)

We demonstrate that the angular momentum compensation temperature $$T_{rm A}$$, at which the net angular momentum in the sample disappears, can be controlled in Ho$$_3$$Fe$$_5$$O$$_{12}$$ by partially substituting Dy for Ho. The $$T_{rm A}$$ can be detected using the Barnett effect, by which mechanical rotation magnetizes an object due to spin-rotation coupling. We found that $$T_{rm A}$$ increases with the Dy content and clarified that the $$T_{rm A}$$ of Ho$$_{1.5}$$Dy$$_{1.5}$$Fe$$_5$$O$$_{12}$$ coincides with room temperature. The Barnett effect enables us to explore materials applicable to magnetic devices utilizing the angular momentum compensation only by rotating the powder sample at room temperature.

論文

Magnetomechanical sensing based on delta-E effect in Y$$_3$$Fe$$_5$$O$$_{12}$$ micro bridge

有沢 洋希*; 大門 俊介*; 追川 康之*; Seo, Y.-J.*; 針井 一哉; 大柳 洸一*; 齊藤 英治

Applied Physics Letters, 114(12), p.122402_1 - 122402_5, 2019/03

https://doi.org/10.1063/1.5090272
 被引用回数：4 パーセンタイル：27.5(Physics, Applied)

We have investigated magnetic field effects on mechanical vibration of a magnetic microbridge made of ferrimagnetic insulator Y$$_3$$Fe$$_5$$O$$_{12}$$ at room temperature. The mechanical resonance frequency of the bridge exhibits a steep change at the saturation magnetic field of the microbridge. The steep change was shown to originate from magnetoelastic coupling combined with shape magnetic anisotropy. The competition between shape magnetic anisotropy and the external magnetic field can drive a delta-E effect, the modulation of Young modulus via the magnetoelastic coupling, in a narrow field range, which results in the observed steep change in the mechanical property.

論文

Antiferromagnetic NiO thickness dependent sign of the spin Hall magnetoresistance in $$gamma$$-Fe$$_2$$O$$_3$$/NiO/Pt epitaxial stacks

Dong, B.-W.*; Baldrati, L.*; Schneider, C.*; 新関 友彦*; Ramos, R.*; Ross, A.*; Cramer, J.*; 齊藤 英治; Kl$"a$ui, M.*

Applied Physics Letters, 114(10), p.102405_1 - 102405_5, 2019/03

https://doi.org/10.1063/1.5080766
 被引用回数：8 パーセンタイル：49.83(Physics, Applied)

We study the spin Hall magnetoresistance (SMR) in epitaxial $$gamma$$-Fe$$_2$$O$$_3$$/NiO(001)/Pt stacks, as a function of temperature and thickness of the antiferromagnetic insulating NiO layer. Upon increasing the thickness of NiO from 0 nm to 10 nm, we detect a sign change of the SMR in the temperature range between 10 K and 280 K. This temperature dependence of the SMR in our stacks is different compared to that of previously studied yttrium iron garnet/NiO/Pt, as we do not find any peak or sign change as a function of temperature. We explain our data by a combination of spin current reflection from both the NiO/Pt and $$gamma$$-Fe$$_2$$O$$_3$$/NiO interfaces and the thickness-dependent exchange coupling mode between the NiO and $$gamma$$-Fe$$_2$$O$$_3$$ layers, comprising parallel alignment for thin NiO and perpendicular alignment for thick NiO.

論文

Observation of gyromagnetic reversal

今井 正樹; 緒方 裕大*; 中堂 博之; 小野 正雄; 針井 一哉; 松尾 衛*; 大沼 悠一*; 前川 禎通; 齊藤 英治

Applied Physics Letters, 113(5), p.052402_1 - 052402_3, 2018/07

https://doi.org/10.1063/1.5041464
 被引用回数：16 パーセンタイル：69.09(Physics, Applied)

We report direct observation of gyromagnetic reversal, which is the sign change of gyromagnetic ratio in a ferrimagnet Ho$$_3$$Fe$$_5$$O$$_{12}$$, by using the Barnett effect measurement technique at low temperatures. The Barnett effect is a phenomenon in which magnetization is induced by mechanical rotation through the coupling between rotation and total angular momentum $$J$$ of electrons. The magnetization of Ho$$_3$$Fe$$_5$$O$$_{12}$$ induced by mechanical rotation disappears at 135 K and 240 K. The temperatures correspond to the magnetization compensation temperature $$T_{rm M}$$ and the angular momentum compensation temperature $$T_{rm A}$$, respectively. Between $$T_{rm M}$$ and $$T_{rm A}$$, the magnetization flips over to be parallel against the angular momentum due to the sign change of gyromagnetic ratio. This study provides an unprecedented technique to explore the gyromagnetic properties.

論文

Nanoscale spatial analysis of clay minerals containing cesium by synchrotron radiation photoemission electron microscopy

吉越 章隆; 塩飽 秀啓; 小林 徹; 下山 巖; 松村 大樹; 辻 卓也; 西畑 保雄; 小暮 敏博*; 大河内 拓雄*; 保井 晃*; et al.

Applied Physics Letters, 112(2), p.021603_1 - 021603_5, 2018/01

https://doi.org/10.1063/1.5005799
 被引用回数：6 パーセンタイル：34.77(Physics, Applied)

放射光光電子顕微鏡(SR-PEEM)を人工的にCs吸着したミクロンサイズの風化黒雲母微粒子のピンポイント分析に適用した。絶縁物にもかかわらず、チャージアップの影響無しに構成元素(Si, Al, Cs, Mg, Fe)の空間分布を観察できた。Csが粒子全体に分布することが分かった。Cs M$$_{4,5}$$吸収端近傍のピンポイントX線吸収分光(XAS)から、1価の陽イオン状態(Cs$$^{+}$$)であることがわかった。さらに、Fe L$$_{2,3}$$吸収端の測定から、Feの価数状態を決定した。我々の結果は、サンプルの伝導性に左右されること無く、SR-PEEMがさまざまな環境試料に対するピンポイント化学分析法として利用可能であることを示すものである。

論文

Effect of rattling motion without cage structure on lattice thermal conductivity in LaOBiS$$_{2-x}$$Se$$_x$$

Lee, C. H.*; 西田 篤弘*; 長谷川 巧*; 西当 弘隆*; 國岡 春乃*; 河村 聖子; 中村 充孝; 中島 健次; 水口 佳一*

Applied Physics Letters, 112(2), p.023903_1 - 023903_4, 2018/01

https://doi.org/10.1063/1.5010373
 被引用回数：26 パーセンタイル：79.48(Physics, Applied)

LaOBiS$$_{2-x}$$Se$$_x$$の低エネルギーフォノンを中性子非弾性散乱によって調べた。主にBi原子の振動に関連すると思われる分散のないフラットなフォノンが、比較的低いエネルギー$$E = 6 sim 6.7$$meVに観測された。このフォノンは、S原子よりも原子質量の大きいSeをドープし格子が膨張することによってソフト化する。同時に、Seドープにより格子熱伝導率が減少する。これらの結果は、LaOBiS$$_{2-x}$$Se$$_x$$が籠状構造を持たないにもかかわらず、Bi原子のラットリングが籠状化合物のラットリングのようにフォノンを散乱しうるということを示唆しており、それが熱電特性を向上させるのに寄与していると考えられる。

論文

Photo-oxidative doping in $$pi$$-conjugated zig-zag chain of carbon atoms with sulfur-functional group

池浦 広美*; 関口 哲弘

Applied Physics Letters, 111(23), p.231605_1 - 231605_4, 2017/12

https://doi.org/10.1063/1.4990570
 被引用回数：0 パーセンタイル：0(Physics, Applied)

-SCH$$_{3}$$側鎖をもつトランス-ポリアセチレン(PA)骨格の光酸化ドーピング過程を研究した。本分子系はジグザグ状のグラフェン-ナノリボン末端のヘテロ置換による材料機能化に関連している。硫黄K殻X線吸収端近傍構造(XANES)分光法を用い、S-CH$$_{3}$$と大気O$$_{2}$$との反応によりPA骨格に結合したS(O)CH$$_{3}$$や-SO$$_{3}$$$$^{-}$$など酸化生成物が選択的に生じることを示した。硫黄の酸化状態とXANESピーク位置との相関から、CH$$_{3}$$S$$^{delta+}$$ -PA$$^{delta-}$$の部分電荷分布を評価した。陽電荷的な硫黄原子は高い電気陰性度の酸素原子をより引き付け、更なる光酸化を促進すると期待できる。SO$$_{3}$$$$^{-}$$側鎖が生成していることから、明らかにPA骨格へのホールドーピングが起こっている。本結果はUV光照射を用いた原子レベルにおけるドーピング制御や空間選択ドーピングといった創製戦略を提供する。

論文

Design and control of interface reaction between Al-based dielectrics and AlGaN Layer in AlGaN/GaN metal-oxide-semiconductor structures

渡邉 健太*; 野崎 幹人*; 山田 高寛*; 中澤 敏志*; 按田 義治*; 石田 昌宏*; 上田 哲三*; 吉越 章隆; 細井 卓治*; 志村 考功*; et al.

Applied Physics Letters, 111(4), p.042102_1 - 042102_5, 2017/07

https://doi.org/10.1063/1.4986419
 被引用回数：14 パーセンタイル：60.26(Physics, Applied)

GaNは絶縁破壊電界などSiC以上の優れた物性値を有するため、パワーデバイスへの応用が期待されている。また、AlGaN/GaN HFETは優れた高周波特性を示すが、ゲートリーク電流低減のためにMOSゲート構造の実現が望まれている。本研究では、Al$$_{2}$$O$$_{3}$$及びAlONについて成膜時の基板温度を室温から300度の範囲で変化させ、放射光光電子分光法によるMOS界面構造評価及び、MOSキャパシタによる電気特性評価を行った。その結果、Al$$_{2}$$O$$_{3}$$を300度で成膜した場合、成膜中にAlGaN表面の酸化及び後熱処理によるGa拡散が見られ、界面特性が劣化することがわかった。それに対しAlONは成膜温度に関わらず界面反応のほとんどない良好な熱的安定性を示し、また界面特性にも優れることがわかった。

論文

Fabrication and magnetic control of Y$$_3$$Fe$$_5$$O$$_{12}$$ cantilevers

Seo, Y.-J.*; 針井 一哉; 高橋 遼*; 中堂 博之; 大柳 洸一*; Qiu, Z.*; 小野 崇人*; 塩見 雄毅*; 齊藤 英治

Applied Physics Letters, 110(13), p.132409_1 - 132409_4, 2017/03

https://doi.org/10.1063/1.4979553
 被引用回数：12 パーセンタイル：55.21(Physics, Applied)

フェリ磁性体であるY$$_3$$Fe$$_5$$O$$_{12}$$を用いたサブミクロンカンチレバーを収束イオンビーム法によって作成し、その振動特性を磁場によって制御した。カンチレバーは縦横2つの振動モードを示し、それぞれのモードは外部磁場の印加によって共鳴周波数が減少、増大した。この結果は磁気力の磁場変化を取り扱った数値シミュレーションでよく再現された。周波数変化は数%に及ぶことから、磁場による高効率な振動制御が行われたと結論できる。

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