Atomic position and the chemical state of an active Sn dopant for Sn-doped -GaO(001)

Tsai, Y. H.*; 小畠 雅明; 福田 竜生; 谷田 肇; 小林 徹; 山下 良之*

Applied Physics Letters, 124(11), p.112105_1 - 112105_5, 2024/03

https://doi.org/10.1063/5.0198160

Recently, gallium oxide (GaO) has attracted much attention as an ultra-wide bandgap semiconductor with a bandgap of about 5 eV. In order to control device properties, it is important to clarify the chemical state of dopants and doping sites. X-ray absorption near edge structure (XANES) and hard X-ray photoemission spectroscopy were used to investigate the dopant sites and chemical states of Sn in Sn-doped -GaO(001) samples. The results show that the chemical state of the Sn dopant is the Sn oxidation state and that the bond lengths around the Sn dopant atoms are longer due to the relaxation effect after Sn dopant insertion. Comparison of experimental and simulated XANES spectra indicates that the octahedral Ga substitution site in -GaO(001) is the active site of the Sn dopant.

Annual Report of the Osaka Laboratory for Radiation Chemistry,Japan Atomic Energy Research Institute, No.17; April 1,1983-March 31,1984

大阪支所*

JAERI-M 84-239, 59 Pages, 1985/01

JAERI-M-84-239.pdf:1.44MB

本報告は、大阪支所において昭和58年度に行われた研究活動を述べたものである。主な研究題目は、電子あるいはイオン照射下の界面現象に関する基礎研究、電子線照射による重合反応の研究、ポリマーの改質および上記の研究と関連した重合反応、高分子分解、ならびにグラフト重合に関する基礎研究である。