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Ho, H. Q.; 本多 友貴; 元山 瑞樹*; 濱本 真平; 石井 俊晃; 石塚 悦男
Applied Radiation and Isotopes, 135, p.12 - 18, 2018/05
被引用回数：8 パーセンタイル：57.70(Chemistry, Inorganic & Nuclear)The p-type spherical silicon solar cell is a candidate for future solar energy with low fabrication cost, however, its conversion efficiency is only about 10%. The conversion efficiency of a silicon solar cell can be increased by using n-type silicon semiconductor as a substrate. This study proposed a new method of neutron transmutation doping silicon (NTD-Si) for producing the n-type spherical solar cell, in which the Si-particles are irradiated directly instead of the cylinder Si-ingot as in the conventional NTD-Si. By using a screw, an identical resistivity could be achieved for the Si-particles without a complicated procedure as in the NTD with Si-ingot. Also, the reactivity and neutron flux swing could be kept to a minimum because of the continuous irradiation of the Si-particles. A high temperature engineering test reactor (HTTR), which is located in Japan, was used as a reference reactor in this study. Neutronic calculations showed that the HTTR has a capability to produce about 40 ton of 10 
cm resistivity Si-particles for fabrication of the n-type spherical solar cell.
竹本 紀之; Romanova, N.*; 木村 伸明; Gizatulin, S.*; 斎藤 隆; Martyushov, A.*; Nakipov, D.*; 土谷 邦彦; Chakrov, P.*
JAEA-Technology 2015-021, 32 Pages, 2015/08
JAEA-Technology-2015-021.pdf:3.15MB
日本原子力研究開発機構・照射試験炉センターでは、産業利用拡大の観点からJMTRを活用した中性子核変換ドーピング(Neutron Transmutation Doping: NTD)法によるシリコン半導体製造を検討している。この検討の一環として、カザフスタン共和国核物理研究所(INP)との原子力科学分野における研究開発協力のための実施取決め(試験研究炉に関する原子力技術)のもとで、INPが有するWWR-K炉を用いたシリコンインゴット試料の照射試験を行うこととした。まず、シリコン回転装置を製作してWWR-K炉に設置するとともに、シリコンインゴット試料の照射位置における中性子照射場の評価を行うため、フルエンスモニタを用いた予備照射試験を行った。次に、予備照射試験結果に基づき、2本のシリコンインゴット試料の照射試験を行うとともに、照射後の試料の抵抗率等を測定し、試験研究炉を用いた高品位シリコン半導体製造の商用生産への適用性について評価を行った。
Ho, H. Q.; 本多 友貴; 濱本 真平; 石井 俊晃; 石塚 悦男
no journal, ,
This study proposed a new method of neutron transmutation doping silicon (NTD-Si) for producing the n-type spherical solar cell at the high temperature engineering test reactor (HTTR), in which the Si-particles are irradiated directly instead of the cylinder Si-ingot as in the conventional NTD-Si. By using a screw, an identical resistivity could be achieved for the Si-particles without a complicated procedure as in the NTD with Si-ingot. Also, the reactivity and neutron flux swing could be kept to a minimum because of the continuous irradiation of the Si-particles.
