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Neutron transmutation doping of n-type spherical silicon solar cell at high-temperature engineering test reactor

Ho, H. Q.; 本多 友貴; 濱本 真平; 石井 俊晃; 石塚 悦男

Ho, H. Q.; Honda, Yuki; Hamamoto, Shimpei; Ishii, Toshiaki; Ishitsuka, Etsuo

This study proposed a new method of neutron transmutation doping silicon (NTD-Si) for producing the n-type spherical solar cell at the high temperature engineering test reactor (HTTR), in which the Si-particles are irradiated directly instead of the cylinder Si-ingot as in the conventional NTD-Si. By using a screw, an identical resistivity could be achieved for the Si-particles without a complicated procedure as in the NTD with Si-ingot. Also, the reactivity and neutron flux swing could be kept to a minimum because of the continuous irradiation of the Si-particles.

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