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論文

In-situ monitoring of ion-beam luminescence of Si-O-C(-H) ceramics under proton-beam irradiation

成澤 雅紀*; 江夏 昌志; 武山 昭憲; 杉本 雅樹; 出崎 亮; 佐藤 隆博; 外薗 洋樹*; 河相 武利*; 岩瀬 彰宏*

Journal of the Ceramic Society of Japan, 123(9), p.805 - 808, 2015/09

Two kinds of Si-O-C(-H) ceramics particles having intrinsic photoluminescence (PL) spectra were prepared from silicone resin microspheres by heat treatment in a hydrogen atmosphere at 800 or 1100$$^{circ}$$C. The obtained particles were painted on a Si substrate using a binder, and ion-beam-luminescence spectra were observed under proton beam irradiation with an acceleration energy in the ranges of 1-3 MeV. Observed spectra had peaks at wavelength of 520-540 nm. These peak wavelengths were larger than those observed under UV light irradiation. The luminescence of H$$_{2}$$ 1100 (sample decarbonized at 1100$$^{circ}$$C) was bright, and that of H$$_{2}$$ 800 (sample decarbonized at 800$$^{circ}$$C) was faint. However, the intensity of luminescence decreased rapidly at an early stage of the beam irradiation. In air, a sharp luminescence band with a peak at 300 nm appeared together with the main emission with a peak in the range of 520-540 nm. The existence of the sharp band at 300 nm was apparent in the H$$_{2}$$ 800 spectra, whereas it appeared as a minor peak in the H$$_{2}$$ 1100 spectra in air.

論文

Annealing of electron irradiated, thick, ultrapure 4H SiC between 1100$$^{circ}$$C and 1500$$^{circ}$$C and measurements of lifetime and photoluminescence

Klahold, W. M.*; Devaty, R. P.*; Choyke, W. J.*; 河原 洸太朗*; 木本 恒暢*; 大島 武

Materials Science Forum, 778-780, p.273 - 276, 2014/02

Ultra-pure n-type (8$$times$$10$$^{13}$$ cm$$^{-3}$$), 99 $$mu$$m thick epitaxial layers of hexagonal (4H) silicon carbide (SiC) were irradiated with electrons either at 170 keV with a fluence of 5$$times$$10$$^{16}$$ cm$$^{-2}$$ or at 1 MeV with a fluence of 1$$times$$10$$^{15}$$ cm$$^{-2}$$ in various geometries. Low temperature photoluminescence (LTPL) spectra and microwave photoconductance ($$mu$$PCD) lifetime measurements were carried out for all samples before and after annealing in argon in free standing mode or on a POCO carbon (Poco Graphite, Inc.) platform, every 50 $$^{circ}$$C from 1100 $$^{circ}$$C to 1500 $$^{circ}$$C. However, no improvement in carrier lifetime was observed although previous studies reported that carbon diffused into SiC during high temperature treatment improves carrier lifetime. The result obtained in this study suggests that simple carbon diffusion model cannot be applied and more study is required to understand the injection of carbon interstitials into the SiC lattice.

論文

Photoluminescence and Raman studies of curium and americium complexes of 6-methyl 2-(2-pyridyl)- benzimidazole; Evidence for an efficient intramolecular energy transfer

Assefa, Z.*; 矢板 毅; Haire, R. G.*; 館盛 勝一

Inorganic Chemistry, 42(23), p.7375 - 7377, 2003/11

 被引用回数:11 パーセンタイル:38.34(Chemistry, Inorganic & Nuclear)

6-メチル-2-(2-ピリジル)-ベンゾイミダゾール(biz)は、溶液中でアクチノイドと容易に錯形成するとともに、高効率に配位子-金属分子内エネルギー移動特性などを示すことが新しく見いだされた。エネルギー移動過程はCm(III):Biz系では、non-radiativeモードで、Am(III):Biz系ではおもにradiativeモードで進行することなどがわかった。

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