In-situ monitoring of ion-beam luminescence of Si-O-C(-H) ceramics under proton-beam irradiation

陽子線照射下でのSi-O-C(-H)セラミックスのイオンビーム発光のその場観察

成澤 雅紀*; 江夏 昌志; 武山 昭憲; 杉本 雅樹; 出崎 亮; 佐藤 隆博; 外薗 洋樹*; 河相 武利*; 岩瀬 彰宏*

Narisawa, Masaki*; Koka, Masashi; Takeyama, Akinori; Sugimoto, Masaki; Idesaki, Akira; Sato, Takahiro; Hokazono, Hiroki*; Kawai, Taketoshi*; Iwase, Akihiro*

Two kinds of Si-O-C(-H) ceramics particles having intrinsic photoluminescence (PL) spectra were prepared from silicone resin microspheres by heat treatment in a hydrogen atmosphere at 800 or 1100C. The obtained particles were painted on a Si substrate using a binder, and ion-beam-luminescence spectra were observed under proton beam irradiation with an acceleration energy in the ranges of 1-3 MeV. Observed spectra had peaks at wavelength of 520-540 nm. These peak wavelengths were larger than those observed under UV light irradiation. The luminescence of H 1100 (sample decarbonized at 1100C) was bright, and that of H 800 (sample decarbonized at 800C) was faint. However, the intensity of luminescence decreased rapidly at an early stage of the beam irradiation. In air, a sharp luminescence band with a peak at 300 nm appeared together with the main emission with a peak in the range of 520-540 nm. The existence of the sharp band at 300 nm was apparent in the H 800 spectra, whereas it appeared as a minor peak in the H 1100 spectra in air.