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Journal Articles

Surface modifications of hydrogen storage alloy by heavy ion beams with keV to MeV irradiation energies

Abe, Hiroshi; Tokuhira, Shinnosuke*; Uchida, Hirohisa*; Oshima, Takeshi

Nuclear Instruments and Methods in Physics Research B, 365(Part A), p.214 - 217, 2015/12

no abstracts in English

Journal Articles

Characterization of F$$^{+}$$-irradiated graphite surfaces using photon-stimulated desorption spectroscopy

Sekiguchi, Tetsuhiro; Baba, Yuji; Shimoyama, Iwao; Nath, K. G.

Surface and Interface Analysis, 38(4), p.352 - 356, 2006/04

 Times Cited Count:3 Percentile:8.09(Chemistry, Physical)

We investigated the orientation nature at the top-most layers of F$$^{+}$$-irradiated graphite using polarization dependent near-edge X-ray absorption fine structure (NEXAFS) spectroscopy which incorporates partial electron yield (PEY) detection and photon-stimulated ion desorption (PSID) techniques. The fluorine K-edge NEXAFS spectra conducted in PEY mode show no significant dependence on polarization angles. In contrast, NEXAFS spectra recorded in F$$^{+}$$ ion yield mode show enhanced yields at a feature of $$sim$$689.4 eV assigned as a $$sigma$$*(C-F) state relevant to =C-F sites, which depend on polarization angles. The C-F bonds prefer relatively tilting down the surface at the top-most layer, while the C-F bonds are randomly directed at deeper regions. We conclude that the difference in the orientation structures between the top surface and bulk is reflected in the NEXAFS recorded in the two different detection modes. It was also found that H$$^{+}$$- and F$$^{2+}$$- PSID NEXAFS spectra are helpful in understanding desorption mechanism, thus in analysing NEXAFS data.

Journal Articles

Ion beam surface modification of Y-TZP and effects of subsequent annealing

Motohashi, Yoshinobu*; Shibata, Taiju; Harjo, S.*; Sakuma, Takaaki*; Ishihara, Masahiro; Baba, Shinichi; Sawa, Kazuhiro

Proceedings of 14th International Federation for Heat Treatment and Surface Engineering Congress Transactions of Materials and Heat Treatment Vol.25 No.5, p.1032 - 1036, 2004/10

no abstracts in English

Journal Articles

SR-excited process

Teraoka, Yuden

Nano Tekunoroji Daijiten, p.340 - 351, 2003/12

The current status of microprocesses using synchrotron radiation in Japan was reviewed. The SR-excited process is followed by SR-excited surface modification, SR-excited crystal growth and SR-excited etching. The SR-excited surface modification is followed by SR-gas-excited surface modification and SR-direct-excited surface modification. The SR-excited crystal growth is followed by SR-excited atomic layer epitaxy and SR-excited chemical vapor deposition. THe SR-excited etching is followed by SR-direct-excited etching, SR-gas-excited etching and SR ablation.

JAEA Reports

Proceedings of the 3rd International Symposium on Material Chemistry in Nuclear Environment (MATERIAL CHEMISTRY '02, MC '02); March 13-15, 2002, Tsukuba

MC'02 Sympsoium Committee

JAERI-Conf 2003-001, 451 Pages, 2003/05

JAERI-Conf-2003-001.pdf:30.73MB

The volume contains all presented papers during the the 3rd International Symposium on Material Chemistry in Nuclear Environment: MATERIAL CHEMISTRY '02 (MC'02), held March 13-15, 2002. The purpose of this symposium is to provide an international forum for the discussion of recent progress in the field of materials chemistry in nuclear environments. This symposium intends to build on the success of the previous symposiums held in Tsukuba in 1992 and 1996. The topics discussed in the symposium MC'02 are Chemical Reaction and Thermodynamics, Degradation Phenomena, New Characterization Technology, Fabrication and New Materials, Composite Materials, Surface Modification, and Computational Science.

Journal Articles

Study of modification processes in sputtering during oxygen exposure

Saido, Masahiro;

Nuclear Instruments and Methods in Physics Research B, 39, p.599 - 602, 1989/00

 Times Cited Count:2 Percentile:45.61(Instruments & Instrumentation)

no abstracts in English

JAEA Reports

Journal Articles

Surface modification of sapphire single crystal by ion implantation

Ionics, 9(4), p.31 - 38, 1983/00

no abstracts in English

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