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論文

Short-range spin order in paramagnetic AgCrSe$$_{2}$$

中村 惇平*; 川北 至信; 岡部 博孝*; Li, B.*; 下村 浩一郎*; 末益 崇*

Journal of Physics and Chemistry of Solids, 175, p.111199_1 - 111199_8, 2023/04

https://doi.org/10.1016/j.jpcs.2022.111199
 被引用回数：2 パーセンタイル：15.11(Chemistry, Multidisciplinary)

Muon spin rotation ($$mu$$SR) experiments were performed to directly investigate the temperature dependence of the short-range order or correlations of chromium spins in the paramagnetic phase of AgCrSe$$_{2}$$. The detailed investigation of the $$mu$$SR spectra over a wide temperature range from low to high temperatures revealed that the short-range spin correlations developed below about 184 K. It also confirmed no short-range correlations at high temperatures, which had been controversial in previous quasi-elastic neutron scattering studies. In addition, the muon spin relaxation was qualitatively changed and showed large missing asymmetry below about 89 K, where the correlation clearly implied short-range spin order. There could be a preparative phenomenon of the phase transition or an anisotropic short-range spin correlation.

論文

Preparation, thermoelectric properties, and crystal structure of boron-doped Mg$$_{2}$$Si single crystals

林 慶*; 齋藤 亘*; 杉本 和哉*; 大山 研司*; 林 好一*; 八方 直久*; 原田 正英; 及川 健一; 稲村 泰弘; 宮崎 譲*

AIP Advances (Internet), 10(3), p.035115_1 - 035115_7, 2020/03

https://doi.org/10.1063/1.5143839
 被引用回数：19 パーセンタイル：68.10(Nanoscience & Nanotechnology)

Mg$$_{2}$$Si is a potential thermoelectric (TE) material that can directly convert waste energy into electricity. In expectation of improving its TE performance by increasing electron carrier concentration, the element boron (B) is doped in Mg$$_{2}$$Si single crystals (SCs). Their detailed crystal structures are definitely determined by using white neutron holography and single-crystal X-ray diffraction (SC-XRD) measurements. The white neutron holography measurement proves that the doped B atom successfully substitutes for the Mg site. The SC-XRD measurement confirms the B-doping site and also reveals the presence of the defect of Si vacancy (VSi) in the B-doped Mg$$_{2}$$Si SCs. Regarding TE properties, the electrical conductivity, $$sigma$$, and the Seebeck coefficient, S, decreases and increases, respectively, due to the decrease in the electron carrier concentration, contrary to the expectation. The power factor of the B-doped Mg$$_{2}$$Si SCs evaluated from $$sigma$$ and S does not increase but rather decreases by the B-doping.

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