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Preparation, thermoelectric properties, and crystal structure of boron-doped Mg$$_{2}$$Si single crystals

ホウ素ドープMg$$_{2}$$Si単結晶の作製,熱電特性および結晶構造

林 慶*; 齋藤 亘*; 杉本 和哉*; 大山 研司*; 林 好一*; 八方 直久*; 原田 正英  ; 及川 健一  ; 稲村 泰弘 ; 宮崎 譲*

Hayashi, Kei*; Saito, Wataru*; Sugimoto, Kazuya*; Oyama, Kenji*; Hayashi, Koichi*; Happo, Naohisa*; Harada, Masahide; Oikawa, Kenichi; Inamura, Yasuhiro; Miyazaki, Yuzuru*

Mg$$_{2}$$Si is a potential thermoelectric (TE) material that can directly convert waste energy into electricity. In expectation of improving its TE performance by increasing electron carrier concentration, the element boron (B) is doped in Mg$$_{2}$$Si single crystals (SCs). Their detailed crystal structures are definitely determined by using white neutron holography and single-crystal X-ray diffraction (SC-XRD) measurements. The white neutron holography measurement proves that the doped B atom successfully substitutes for the Mg site. The SC-XRD measurement confirms the B-doping site and also reveals the presence of the defect of Si vacancy (VSi) in the B-doped Mg$$_{2}$$Si SCs. Regarding TE properties, the electrical conductivity, $$sigma$$, and the Seebeck coefficient, S, decreases and increases, respectively, due to the decrease in the electron carrier concentration, contrary to the expectation. The power factor of the B-doped Mg$$_{2}$$Si SCs evaluated from $$sigma$$ and S does not increase but rather decreases by the B-doping.

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パーセンタイル:71.61

分野:Nanoscience & Nanotechnology

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