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Christle, D.*; Falk, A.*; Andrich, A.*; Klimov, P.*; Hassan, J.*; Son, N. T.*; Janzn, E.*; 大島 武; Awschalom, D.*
Nature Materials, 14(2), p.160 - 163, 2015/02
被引用回数:382 パーセンタイル:99.25(Chemistry, Physical)Carbon vacancy - silicon vacancy pair (V-V
) in silicon carbide (SiC) is regarded as a promising candidate for a qubit for quantum computing since V
-V
is thought to have electronic states with sharp optical and spin transitions. However, single spin operation using V
-V
has not yet been succeeded although it was revealed that V
-V
shows the characteristics as a single photon source (SPS). In this study, we studied spin properties of V
-V
created in SiC by 2 MeV-electron irradiation. First, we found V
-V
in SiC using a confocal microscope (CFM) and measured their optical detected magnet resonance (ODMR) at 20 K. Then, their spin coherence was measured from the standard two-pulse Hahn-echo sequence using ODMR. As a result, the spin coherence time exceeding 1 ms was obtained.
Son, N. T.*; 梅田 享英*; 磯谷 順一*; Gali, A.*; Bockstedte, M.*; Magnusson, B.*; Ellison, A.*; 森下 憲雄; 大島 武; 伊藤 久義; et al.
Materials Science Forum, 527-529, p.527 - 530, 2006/00
電子常磁性共鳴(EPR)を用いて六方晶炭化ケイ素(4H-, 6H-SiC)中の欠陥センターであるP6/P7の構造同定を行った。試料はn型,p型の4H-及び6H-SiC及び高品質半絶縁4H-SiCを用いた。室温または850Cでの3MeV電子線照射(2
10
1
10
/cm
)によりP6/P7センターを導入した。低温(8K及び77K)での
C及び
Siの超微細相互作用を調べた結果、P6及びP7センターは、それぞれ、結晶のC軸に垂直または平行なシリコン空孔(V
)と炭素空孔(V
)の複空孔(V
-V
)であると決定できた。