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-Ga
O
(001)Tsai, Y. H.*; 小畠 雅明; 福田 竜生; 谷田 肇; 小林 徹; 山下 良之*
Applied Physics Letters, 124(11), p.112105_1 - 112105_5, 2024/03
被引用回数：1 パーセンタイル：0.00(Physics, Applied)Recently, gallium oxide (GaO) has attracted much attention as an ultra-wide bandgap semiconductor with a bandgap of about 5 eV. In order to control device properties, it is important to clarify the chemical state of dopants and doping sites. X-ray absorption near edge structure (XANES) and hard X-ray photoemission spectroscopy were used to investigate the dopant sites and chemical states of Sn in Sn-doped -GaO(001) samples. The results show that the chemical state of the Sn dopant is the Sn
oxidation state and that the bond lengths around the Sn dopant atoms are longer due to the relaxation effect after Sn dopant insertion. Comparison of experimental and simulated XANES spectra indicates that the octahedral Ga substitution site in -GaO(001) is the active site of the Sn dopant.
岡根 哲夫; 小畠 雅明; 佐藤 勇*; 小林 啓介*; 逢坂 正彦; 山上 浩志
Nuclear Engineering and Design, 297, p.251 - 256, 2016/02
被引用回数：2 パーセンタイル：18.37(Nuclear Science & Technology)Transport behavior of CsI in the heating test, which simulated a BWR severe accident, was investigated by hard X-ray photoelectron spectroscopy (HAXPES) with an emphasis on the chemical effect of boron vapors. CsI deposited on metal tube at temperatures ranging from 150
C to 750C was reacted with vapor/aerosol B
O
, and the chemical form of reaction products on the sample surface was examined from the HAXPES spectra of core levels, e.g., Ni 2p, Cs 3d and I 3d levels, and valence band. For the samples at 
300C, while the chemical form of major product on the sample surface without an exposure to BO was suggested to be CsI from the HAXPES spectra, an intensity ratio of Cs/I was dramatically reduced at the sample surface after the reaction with BO. The results suggest the possibility of significant decomposition of deposited CsI induced by the chemical reaction with BO at specific temperatures.
