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Takeuchi, Tomoaki; Otsuka, Noriaki; Watanabe, Takashi*; Kamiyanagi, Tomohiro*; Komanome, Hirohisa*; Ueno, Shunji*; Tsuchiya, Kunihiko
Proceedings of Decommissioning and Remote Systems 2016 (D&RS 2016) (CD-ROM), p.263 - 264, 2016/07
In response to the lesson of the accident at the Fukushima Dai-ichi Nuclear Power Plant, we started a development of a radiation resistant monitoring camera system. In this study, improvement of radiation resistance of the imaging sensor was addressed as the main target. Three different types of CMOS image sensors with field plate structure and three transistors (3TPD), photogate structure and three (3TPG) or four transistors (4TPG) were designed and fabricated. The sensors were irradiated up to 70 kGy at the 
Co 
-ray irradiation facility at Takasaki Advanced Radiation Research Institute in Japan Atomic Energy Agency. After irradiation, the dark current of the 4TPG rapidly increased and excessed that of the 3T types at least by 50 kGy. The large increase of the dark current of the 4TPG resulted in almost no sensitivity at least by 50 kGy. On the other hand, the sensitivities of the 3T types remained usable values and 3TPG had larger sensitivity than 3TPD after 50 kGy. As the results, the 3TPG sensor was revealed to be the most advantageous one in terms of dark current and sensitivity among the fabricated three sensors.
-irradiation effects on imaging sensors in radiation-resistant monitoring cameraTakeuchi, Tomoaki; Ueno, Shunji; Shibata, Hiroshi; Tsuchiya, Kunihiko; Kamiyanagi, Tomohiro*; Komanome, Hirohisa*; Watanabe, Takashi*
no journal, ,
no abstracts in English
irradiation effects of image sensor for radiation-resistant cameraTakeuchi, Tomoaki; Otsuka, Noriaki; Kamiyanagi, Tomohiro*; Watanabe, Takashi*; Komanome, Hirohisa*; Ueno, Shunji*; Tsuchiya, Kunihiko
no journal, ,
no abstracts in English
武内 伴照; 土谷 邦彦
上柳 智裕*; 渡辺 恭志*
JP, 15/412154 
Patent licensing information Patent publication (In Japanese)
A radiation tolerant optical detection element includes: a p-type base-body region; a gate insulating film provided on an upper surface of the base-body region; an n-type buried charge-generation region buried in an upper portion of the base-body region; an n-type charge-readout region buried in an upper portion of the base-body region on the inner-contour side of the buried charge-generation region; an n-type reset-drain region buried on the inner-contour side of the charge-readout region; a transparent electrode provided on the gate insulating film above the buried charge-generation region; and a reset-gate electrode provided on a portion of the gate insulating film between the charge-readout region and the reset-drain region.
武内 伴照; 土谷 邦彦
上柳 智裕*; 渡辺 恭志*
JP, 2016-535804 Patent licensing information Patent publication (In Japanese)
電圧感度が高く、且つ耐放射線特性を有する光検出素子及びこの光検出素子を画素とした固体撮像装置を提供する。P型の基体領域(11)と、基体領域(11)の上面に設けられたゲート絶縁膜(23)と、基体領域(11)の上部に埋め込まれたN型の電荷生成埋込領域(13)と、電荷生成埋込領域(13)の内径の基体領域(11)の上部に埋め込まれたN型の電荷読出領域(15i,j)と、電荷読出領域(15i,j)の内径側に埋め込まれたN型のリセットドレイン領域(16i,j)と、電荷生成埋込領域の上方となるゲート絶縁膜(23)上に設けられた透明電極(21i,j)と、電荷読出領域(15i,j)とリセットドレイン領域(16i,j)との間のゲート絶縁膜(23)上に設けられたリセットゲート電極(22i,j)とを備える。