Local bifurcation with spin-transfer torque in superparamagnetic tunnel junctions

Funatsu, Takuya*; Kanai, Shun*; Ieda, Junichi; Fukami, Shunsuke*; Ohno, Hideo*

Nature Communications (Internet), 13, p.4079_1 - 4079_8, 2022/07

https://doi.org/10.1038/s41467-022-31788-1

Modulation of the energy landscape by external perturbations governs various thermally-activated phenomena, described by the Arrhenius law. Thermal fluctuation of nanoscale magnetic tunnel junctions with spin-transfer torque (STT) shows promise for unconventional computing, whereas its rigorous representation, based on the Neel-Arrhenius law, has been controversial. In particular, the exponents for thermally-activated switching rate therein, have been inaccessible with conventional thermally-stable nanomagnets with decade-long retention time. Here we approach the Neel-Arrhenius law with STT utilising superparamagnetic tunnel junctions that have high sensitivity to external perturbations and determine the exponents through several independent measurements including homodyne-detected ferromagnetic resonance, nanosecond STT switching, and random telegraph noise. Furthermore, we show that the results are comprehensively described by a concept of local bifurcation observed in various physical systems. The findings demonstrate the capability of superparamagnetic tunnel junction as a useful tester for statistical physics as well as sophisticated engineering of probabilistic computing hardware with a rigorous mathematical foundation.

Chiral-spin rotation of non-collinear antiferromagnet by spin-orbit torque

Takeuchi, Yutaro*; Yamane, Yuta*; Yoon, J.-Y.*; Ito, Ryuichi*; Jinnai, Butsurin*; Kanai, Shun*; Ieda, Junichi; Fukami, Shunsuke*; Ohno, Hideo*

Nature Materials, 20(10), p.1364 - 1370, 2021/10

https://doi.org/10.1038/s41563-021-01005-3

Magnetization dynamics and its scattering mechanism in thin CoFeB films with interfacial anisotropy

Okada, Atsushi*; He, S.*; Gu, B.; Kanai, Shun*; Soumyanarayanan, A.*; Lim, S. T.*; Tran, M.*; Mori, Michiyasu; Maekawa, Sadamichi; Matsukura, Fumihiro*; et al.

Proceedings of the National Academy of Sciences of the United States of America, 144(15), p.3815 - 3820, 2017/04

http://doi.org/10.1073/pnas.1613864114

Anomalous temperature dependence of current-induced torques in CoFeB/MgO heterostructures with Ta-based underlayers

Kim, J.*; Sinha, J.*; Mitani, Seiji*; Hayashi, Masamitsu*; Takahashi, Saburo*; Maekawa, Sadamichi; Yamanouchi, Michihiko*; Ohno, Hideo*

Physical Review B, 89(17), p.174424_1 - 174424_8, 2014/05

https://doi.org/10.1103/PhysRevB.89.174424

We have studied the underlayer thickness and temperature dependencies of the current-induced effective field in CoFeB/MgO heterostructures with Ta-based underlayers. The underlayer thickness at which the effective field saturates is found to be different between the two orthogonal components of the effective field; i.e., the dampinglike term tends to saturate at a smaller underlayer thickness than the fieldlike term. For large underlayer thickness films in which the effective field saturates, we find that the measurement temperature significantly influences the size of the effective field. A striking difference is found in the temperature dependence of the two components: the dampinglike term decreases whereas the fieldlike term increases with increasing temperature. Using a simple spin diffusion-spin transfer model, we find that all of these results can be accounted for provided the real and imaginary parts of an effective spin mixing conductance are negative. These results imply that either spin transport in this system is different from conventional metallic interfaces or effects other than spin diffusion into the magnetic layer need to be taken into account in order to model the system accurately.

Magnetic circular dichroism in Mn 2p core absorption of GaMnAs

Ueda, Shigenori*; Imada, Shin*; Muro, Takayuki*; Saito, Yuji; Suga, Shigemasa*; Matsukura, F.*; Ohno, Hideo*

Physica E, 10(1-3), p.210 - 214, 2001/05

https://doi.org/10.1016/S1386-9477(01)00084-4

no abstracts in English

電子デバイス、その製造方法及びその使用方法

家田 淳一

竹内 祐太朗*; 深見 俊輔*; 山根 結太*; Yoon J.-Y.*; 陣内 佛霖*; 金井 駿*; 大野 英男*

JP, 2021-071582  Patent licensing information

【課題】 外部磁場が不要であり、比較的大きな読み出し信号の出力が可能な乱数生成素子、メモリ素子として使用することが可能であり、また、出力/入力周波数の可変性を備えた発振/検波素子としても使用することが可能である電子デバイスを提供することを目的とする。 【解決手段】 本体と、入力端子と、出力端子と、を備え、前記本体は、基板上にスピントルク生成層とノンコリニア反強磁性層がこの順、または逆順の積層方向に積層されて構成されるものであり、前記入力端子は、前記スピントルク生成層の積層面と平行な任意の一方向の両端に配置され、前記ノンコリニア反強磁性層は、前記任意の一方向と前記積層方向が成す平面においてノンコリニアな磁気秩序を有することを特徴とする電子デバイス。

電子デバイス、その製造方法及びその使用方法

家田 淳一

竹内 祐太朗*; 深見 俊輔*; 山根 結太*; Yoon J.-Y.*; 陣内 佛霖*; 金井 駿*; 大野 英男*

JP, 202280029040.1  Patent licensing information

外部磁場が不要であり、比較的大きな読み出し信号の出力が可能な乱数生成素子、メモリ素子として使用することが可能であり、また、出力/入力周波数の可変性を備えた発振/検波素子としても使用することが可能である電子デバイスを提供することを目的とする。 本体と、入力端子と、出力端子と、を備え、前記本体は、基板上にスピントルク生成層とノンコリニア反強磁性層がこの順、または逆順の積層方向に積層されて構成されるものであり、前記入力端子は、前記スピントルク生成層の積層面と平行な任意の一方向の両端に配置され、前記ノンコリニア反強磁性層は、前記任意の一方向と前記積層方向が成す平面においてノンコリニアな磁気秩序を有することを特徴とする電子デバイス。