/p InGaP solar cellDharmarasu, N.*; Yamaguchi, Masafumi*; Khan, A.*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Matsuda, Sumio*
n/p InGaP junctions were irradiated with 100keV-protons, and the effect on their electrical properties were studied using C-V and DLTS methods.The n/p InGaP junctions were fabricated by MOCVD method.They were irradiated up to 1E12 /cm
at RT. The carrier removal rate was estimated to be 6.1E4 cm
from the fluence dependence of carrier concentration. H1 peaks which were observed at 400 K in DLTS measurements were found after irradiation.It was concluded that H1 peaks relates residual defects which act as carrier removal centers.
Language |
: | English |
|---|---|---|
Journal |
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Volume |
: | 75 |
Number |
: | 1-2 |
Pages |
: | p.327 - 333 |
Publication Year/Month |
: | 2003/01 |
Meeting title |
: | 12th International Photovoltaic Science and Engineering Conference (PVSEC-12) |
Held date |
: | 2001/06 |
Location (city) |
: | Cheju Island |
Location (country) |
: | Korea |
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: |
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