Refine your search�ソスF     
Report No.

Low energy proton-induced defects on n$$^{+}$$/p InGaP solar cell

Dharmarasu, N.*; Yamaguchi, Masafumi*; Khan, A.*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Matsuda, Sumio*

n$$^{+}$$/p InGaP junctions were irradiated with 100keV-protons, and the effect on their electrical properties were studied using C-V and DLTS methods.The n$$^{+}$$/p InGaP junctions were fabricated by MOCVD method.They were irradiated up to 1E12 /cm$$^{2}$$ at RT. The carrier removal rate was estimated to be 6.1E4 cm$$^{-1}$$ from the fluence dependence of carrier concentration. H1 peaks which were observed at 400 K in DLTS measurements were found after irradiation.It was concluded that H1 peaks relates residual defects which act as carrier removal centers.



- Accesses




Category:Energy & Fuels



[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.