/p InGaP solar cellDharmarasu, N.*; Yamaguchi, Masafumi*; Khan, K.*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Matsuda, Sumio*
Carrier concentration and defects in n+/p InGaP irradiated with 100keV-protons (1E10, 5E12 /cm2) were studied.As a result of C-V measurements, the carrier removal rate was estimated to be 6.1E4 /cm2 which was extremely high as compared to 1MeV-electron irradiation case (0.93 /cm). H1 peak whose energy corresponds to Ev+0.90V was obtained from DLTS measurements. This suggests that carrier removal rate in proton-irradiated ones is much higher than that in electron-irradiated ones due to the generation of the defects (H1 peak) which act as majority carrier traps.
Language |
: | English |
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Volume |
: | 308-310 |
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Pages |
: | p.1181 - 1184 |
Publication Year/Month |
: | 2001/12 |
Meeting title |
: | 21st International Conference on Defects in Semiconductors (ICDS-21) |
Held date |
: | 2001/07 |
Location (city) |
: | Giessen |
Location (country) |
: | Germany |
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Percentile:41.38 Category:Physics, Condensed Matter |
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