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Deep-level transient spectroscopy analysis of proton-irradiated n$$^{+}$$/p InGaP solar cell

陽子線照射したn$$^{+}$$/p InGaP太陽電池構造のDLTS解析

Dharmarasu, N.*; 山口 真史*; Khan, K.*; 高本 達也*; 大島 武; 伊藤 久義; 今泉 充*; 松田 純夫*

Dharmarasu, N.*; Yamaguchi, Masafumi*; Khan, K.*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Matsuda, Sumio*

100keV陽子線照射(1E10, 5E12/cm$$^{2}$$)したInGaP半導体n+/p接合のキャリア濃度及び生成される欠陥準位を調べた。キャパシタンス測定の結果、キャリア濃度減少率として、1MeV電子線の0.93/cmより桁違いに大きい6.1E4/cmが見積もられた。またDLTS測定より欠陥準位を調べたところ、H1ピーク(Ev+0.90V対応)が観測された。このH1ピークが多数キャリア捕獲中心として働くことで、100keV陽子線照射では1MeV電子線照射に比べキャリア濃度減少率が大きいことが分かった。

Carrier concentration and defects in n+/p InGaP irradiated with 100keV-protons (1E10, 5E12 /cm2) were studied.As a result of C-V measurements, the carrier removal rate was estimated to be 6.1E4 /cm2 which was extremely high as compared to 1MeV-electron irradiation case (0.93 /cm). H1 peak whose energy corresponds to Ev+0.90V was obtained from DLTS measurements. This suggests that carrier removal rate in proton-irradiated ones is much higher than that in electron-irradiated ones due to the generation of the defects (H1 peak) which act as majority carrier traps.

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パーセンタイル:38.48

分野:Physics, Condensed Matter

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