EPR study of single silicon vacancy-related defects in 4H- and 6H-SiC

Mizuochi, Norikazu*; Isoya, Junichi*; Yamasaki, Satoshi*; Takizawa, Haruki; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi

The spin triplet (S=1) single silicon vacancy relared defects in electron irradiated (3MeV 410 $^{18}$ e/cm $^{2}$ , room temperature) n-type 4H- and p-type 6H-SiC were studied by electron paramagnetic resonance (EPR) spectroscopy. By laser irradiation, the hyperfine couplings (HFC) with nearest-neighbor (NN) atoms of T $_{V2a}$ were observed. As a result of detailed analysis, T $_{V2a}$ was unambiguously assigned to be the single silicon vacancy.

Language	:	English
Journal	:	Materials Science Forum
Volume	:	389-393
Number	:
Pages	:	p.497 - 500
Publication Year/Month	:	2002/00
Meeting title	:	International Conference of Silicon Carbide and Related Materials 2001 (ICSCRM2001)
Held date	:	2001/10
Location (city)	:	Tsukuba
Location (country)	:	Japan
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.4028/www.scientific.net/MSF.389-393.497
DOI for research data	:
Keywords	:	SiC半導体; 電子線照射; EPR; 欠陥; シリコン空孔
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	図書館情報大学

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Registration No. : B20011136
JAEA Abstracts No. :
Paper Submission No. : 25604

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