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Majority- and minority-carrier deep level traps in proton-irradiated $$n^{+}/p$$-InGaP space solar cells

Dharmarasu, N.*; Yamaguchi, Masafumi*; Bourgoin, J. C.*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Matsuda, Sumio*

We studied the properties of observed defects in n$$^{+}$$/p-InGaP solar cells created by irradiation of protons with different energies.Three majority (hole) and a minority-carrier traps, labeled respectively as HP1 (E$$_{V}$$+0.90$$pm$$0.05eV), HP2 (E$$_{V}$$+0.73$$pm$$0.05eV), H2 (E$$_{V}$$ +0.55eV),and EP1 (E$$_{C}$$ 0.54eV),were identified using deep level transient spectroscopy. All majority-carrier traps were found to act as recombination centers. While the H2 traps present in the proton-irradiated p-InGaP was found to anneal out by minority-carrier injection, the other traps were not.

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Category:Physics, Applied

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