• help
  • PC | SP
  • JP | EN
          
Refine your search：     
Report No.
 - 
Clear All
Return to the previous page

Majority- and minority-carrier deep level traps in proton-irradiated $$n^{+}/p$$-InGaP space solar cells

Dharmarasu, N.*; Yamaguchi, Masafumi*; Bourgoin, J. C.*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; Matsuda, Sumio*

We studied the properties of observed defects in n$$^{+}$$/p-InGaP solar cells created by irradiation of protons with different energies.Three majority (hole) and a minority-carrier traps, labeled respectively as HP1 (E$$_{V}$$+0.90$$pm$$0.05eV), HP2 (E$$_{V}$$+0.73$$pm$$0.05eV), H2 (E$$_{V}$$ +0.55eV),and EP1 (E$$_{C}$$ 0.54eV),were identified using deep level transient spectroscopy. All majority-carrier traps were found to act as recombination centers. While the H2 traps present in the proton-irradiated p-InGaP was found to anneal out by minority-carrier injection, the other traps were not.

Language

 :

English

Journal

 :

Applied Physics Letters

Volume

 :

81

Number

 :

1

Pages

 :

p.64 - 66

Publication Year/Month

 :

2002/07

Meeting title

 :

Held date

 :

Location (city)

 :

Location (country)

 :

Patent information

 :

PDF

 :


Paper URL

 :

https://doi.org/10.1063/1.1491005

DOI for research data

 :

Keywords

 :

InGaP太陽電池; 陽子線照射; DLTS測定; 多数、少数キャリアトラップ

Research Facility

 :

TIARA(イオン照射研究施設)

Press Release

 :

Article of JAEA R&D Review

 :

Cooperating Institute

 :

豊田工業大学

Accesses

 :

- Accesses

InCites™

 :

Percentile:55.85

Category:Physics, Applied

Altmetrics

 :

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.

Return to the previous page