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X-ray diffraction study on GaAs(001)-2$$times$$4 surfaces under molecular-beam epitaxy conditions

分子線エピタキシー条件下におけるGaAs(001)-2$$times$$4表面のX線回折測定

高橋 正光; 米田 安宏  ; 水木 純一郎

Takahashi, Masamitsu; Yoneda, Yasuhiro; Mizuki, Junichiro

その場表面X線回折法により、GaAs(001)-$$(2times4)$$再構成表面を詳しく調べた。試料は、他の解析用真空槽に搬送することなく、分子線エピタキシー条件下でそのまま測定に付した。一定のAs圧下において、GaAs(001)-$$(2times4)$$構造の$$beta$$相に相当する範囲内で基板温度を上げていきながら、多数のX線回折パターンを測定した。545$$^circ$$Cまでの比較的低い温度では、測定されたX線回折パターンは$$beta$$2(2$$times$$4)表面とよく一致した。しかしながら、585$$^circ$$Cでは、$$(2times4)$$周期性をなお保ちながら、$$beta$$2(2$$times$$4)とは異なる回折パターンが得られた。この変化は、Asダイマーが一部脱離し、$$beta$$2(2$$times$$4)と$$alpha$$2(2$$times$$4)とが混在した表面になったことにより説明できる。

The GaAs(001)-$$(2times4)$$ reconstructed surface was investigated by in situ surface X-ray diffraction. The sample was subjected to measurements under molecular-beam epitaxy conditions without being transferred another chamber. Several X-ray diffraction patterns were measured with increasing the substrate temperature within the $$beta$$-phase of GaAs(001)-$$(2times4)$$ in a constant As flux of 5$$times$$10$$^{-7}$$ Torr. At relatively low temperatures up to 545$$^circ$$C, the observed X-ray diffraction patterns agree well to the $$beta$$2(2$$times$$4) surface. However, a different X-ray diffraction pattern was obtained at 585$$^circ$$C, while the $$2times 4$$ periodicity still persited. This change is explained by partial As-dimer desorption which results in a mixture of the $$beta$$2(2$$times$$4) and $$alpha$$2(2$$times$$4) structures.

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パーセンタイル:30.88

分野:Chemistry, Physical

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