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Interfacial properties of a direct bonded Nd-doped YVO$$_{4}$$ and YVO$$_{4}$$ single crystal

直接接合型Nd:YVO$$_{4}$$及びYVO$$_{4}$$結晶の接合界面の特性評価

杉山 僚; 奈良 康永; 和田 謙吾*; 福山 裕康

Sugiyama, Akira; Nara, Yasunaga; Wada, Kengo*; Fukuyama, Hiroyasu

Nd:YVO$$_{4}$$レーザー結晶に放熱板として作用するYVO$$_{4}$$母結晶の接合を試みた。接合面の処理法にはこれまでの化学処理に代わる新たなドライエッチング処理を研磨後の結晶表面に適用した。接合のための熱処理プロセスにおいて、析出物の抑制には873Kの熱処理が必要であった。3$$times$$3mmの接合面を評価するために光学散乱測定及び波面歪み測定を行った。この結果、接合面での光学散乱密度は4.6$$times$$10$$^{6}$$/cm$$^{3}$$以下であり、また光学歪みは633nmにおいて0.04波長程度と推測された。さらに拡大観察試験では、接合界面においても結晶内部と同様に原子が規則正しく整列した状態を確認した。また、YVO$$_{4}$$結晶中のNd$$^{3+}$$イオンの拡散定数は873Kにおいて2.3$$times$$10$$^{-23}$$m$$^{2}$$/secと推測された。

Laser crystal bonding of a neodymium-doped yttrium orthovanadate (Nd: YVO$$_{4}$$) and a non-doped yttrium orthovanadate (YVO$$_{4}$$) crystal as a cold finger has been demonstrated. Instead of a traditional chemical treatment, a newly developed dry etching process was applied to the preparation for contact of mechanically polished surfaces. In the subsequent heat treatment process, stable heating at 873 K was required to prevent precipitation at the bonded interface. The bonded interface of 3 mm $$times$$ 3 mm was investigated by optical scattering and wavefront distortion measurements. The scattering density around the bonded interface was less than 4.6$$times$$10$$^{6}$$ /cm$$^{3}$$ and the wavefront distortion caused by the bonded region was assumed to be around 0.04-wave at 633 nm. Additional magnified inspection showed that atoms in the bonded region were well arranged with the same regularity as the bulk crystal. The diffusion coefficient of Nd$$^{3+}$$ ions in the YVO$$_{4}$$ crystal was estimated at 2.3$$times$$10$$^{-23}$$ m$$^{2}$$/sec at 873 K.

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