Heavy-ion induced current in MOS structure

Takahashi, Yoshihiro*; Shibata, Toshihiko*; Murase, Yuji*; Onishi, Kazunori*; Hirao, Toshio; Kamiya, Tomihiro

no abstracts in English

Language	:	English
Journal	:	Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6)
Volume	:
Number	:
Pages	:	p.111 - 114
Publication Year/Month	:	2004/10
Meeting title	:	6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6)
Held date	:	2004/10
Location (city)	:	Tsukuba
Location (country)	:	Japan
Patent information	:
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Paper URL	:
DOI for research data	:
Keywords	:	MOSキャパシタ; 重イオン; シングルイオンヒット; TIBIC; 変位電流
Research Facility	:	TIARA(イオン照射研究施設)
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	日本大学

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Registration No. : B20041358
JAEA Abstracts No. : 47001741
Paper Submission No. : 22340

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