Element-selective observation of electronic structure transition between semiconducting and metallic states in boron-doped diamond using soft X-ray emission and absorption spectroscopy

軟X線分光法を用いて観測したホウ素ドープダイヤモンドの半導体-金属間電子構造の変化

飯原 順次*; 村松 康司; 武部 敏彦*; 澤村 明賢*; 難波 暁彦*; 今井 貴浩*; Denlinger, J. D.*; Perera, R. C. C.*

Iihara, Junji*; Muramatsu, Yasuji; Takebe, Toshihiko*; Sawamura, Akitaka*; Namba, Akihiko*; Imai, Takahiro*; Denlinger, J. D.*; Perera, R. C. C.*

軟X線分光法を用いてホウ素ドープダイヤモンドの半導体-金属間電子構造の変化を観測した。ホウ素濃度が数十ppmから数万ppmに増加するにつれて、ホウ素と炭素原子のバンド構造(価電子帯と伝導帯)が半導体構造から金属構造に変化してゆく様子が明瞭にとらえられた。本分光法によるバンド構造変化の観察は、ダイヤモンド半導体のバンドギャップ制御に重要な情報をもたらす。

Electronic structure transition between semiconducting and metallic states in boron (B) -doped diamonds was element-selectively observed by soft X-ray emission and absorption spectroscopy using synchrotron radiation. For the lightly B-doped diamonds, the B 2-density of states (DOS) in the valence band were enhanced with a steep-edge-feature near the Fermi level, and localized acceptor levels, characteristic of semiconductors, were clearly observed both in B 2- and C 2-DOS in the conduction bands. For the heavily B-doped diamonds, the localized acceptor levels developed into extended energy levels and new energy levels were generated to form an extended conduction band structure which overlapped with the valence band. Thus, this clarified that the metallic energy band structure is actually formed by heavy boron doping. Such valence and conduction band structures observed by soft X-ray emission and absorption spectroscopy well accounted for the electrical properties of the B-doped diamonds.