Anomalous increase in effective channel mobility on -irradiated p-channel SiC metal-oxide-semiconductor field-effect transistors containing step bunching

Lee, K. K.*; Oshima, Takeshi; Oi, Akihiko*; Ito, Hisayoshi; Pensl, G.*

no abstracts in English

Language	:	English
Journal	:	Japanese Journal of Applied Physics, Part 1
Volume	:	45
Number	:	9A
Pages	:	p.6830 - 6836
Publication Year/Month	:	2006/09
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Paper URL	:	https://doi.org/10.1143/JJAP.45.6830
DOI for research data	:
Keywords	:	no keyword
Research Facility	:	コバルト60照射施設
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Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:51.3 Category:Physics, Applied
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Registration No. : AA20060320
JAEA Abstracts No. : 34001293
Paper Submission No. : 1463

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