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Single crystal growth and magnetic properties of antiferromagnet Ce$$_2$$Pd$$_3$$Si$$_5$$

反強磁性体Ce$$_2$$Pd$$_3$$Si$$_5$$の単結晶育成と磁性

Nguyen, D.; 芳賀 芳範 ; 松田 達磨; 山田 勉*; Thamizhavel, A.*; 奥田 悠介*; 竹内 徹也*; 杉山 清寛*; 萩原 政幸*; 金道 浩一*; 摂待 力生*; 大貫 惇睦*

Nguyen, D.; Haga, Yoshinori; Matsuda, Tatsuma; Yamada, Tsutomu*; Thamizhavel, A.*; Okuda, Yusuke*; Takeuchi, Tetsuya*; Sugiyama, Kiyohiro*; Hagiwara, Masayuki*; Kindo, Koichi*; Settai, Rikio*; Onuki, Yoshichika*

斜方晶Ce$$_2$$Pd$$_3$$Si$$_5$$の単結晶育成に成功し、その構造を決定したほか電気抵抗,比熱,磁化測定を行った。7.2Kにおいて反強磁性秩序を確認し、比較的大きな電子比熱係数77mJ/K$$^2cdot$$mol$$cdot$$Ceを有することを明らかにした。磁化容易軸は001方向で、$$mu_{rm s}$$=1.3$$mu_{rm B}$$/Ceの飽和磁化を持つ。これらの磁性は結晶場モデルによってよく理解でき、励起状態は87Kと504Kにあると見積もられた。

We succeeded in growing a single crystal of Ce$$_2$$Pd$$_3$$Si$$_5$$ with the orthorhombic crystal structure by the Sn-flux method and measured the electrical resistivity, specific heat, magnetic susceptibility and magnetization. The antiferromagnetic ordering was confirmed to be $$T_{rm N}$$ = 7.2 K. The electronic specific heat coefficient was determined as 77 mJ/K$$^2cdot$$mol$$cdot$$Ce. The antiferromagnetic easy-axis was found to be the [001] direction, with an ordered moment of $$mu_{rm s}$$ = 1.3 $$mu_{rm B}$$/Ce, while [100] and [010] directions are hard-axes in magnetization. We observed a metamagnetic transition at 5.7 T for $$Hparallel$$[001] and a saturation of magnetization above 12.1 T. The characteristic magnetic phase diagram was constructed. The crystalline electric field (CEF) scheme was proposed for Ce$$_2$$Pd$$_3$$Si$$_5$$, where the splitting energies between the ground state and two excited doublets in the CEF scheme are estimated to be 87 K and 504 K, respectively.

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パーセンタイル:38.68

分野:Physics, Multidisciplinary

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