Amorphization of carbon materials studied by X-ray photoelectron spectroscopy

X線光電子分光法による炭素系材料の非晶質化の研究

高廣 克己*; 寺井 睦*; 大泉 信之助*; 川面 澄*; 山本 春也; 楢本 洋

Takahiro, Katsumi*; Terai, Atsushi*; Oizumi, Shinnosuke*; Kawatsura, Kiyoshi*; Yamamoto, Shunya; Naramoto, Hiroshi

高配向性黒鉛,等方性黒鉛,ガラス状炭素,Cなどの炭素同素体にイオン照射した結果誘起される非晶質状態をX線光電子分光法及びラマン分光法により調べた。その結果、イオン照射量の増加に伴い「C 1s」線の非対称性が増すことを見いだした。「C 1s」線の非対称性は、黒鉛のドメインサイズとは無関係で、結合角の乱れなどの局所の構造乱れと関係するとの結論を得た。

X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy have been applied to investigate amorphization processes by ion irradiation for various carbon materials, including highly oriented pyrolytic graphite (HOPG), isotropic graphite, glassy carbon (GC) and C crystalline film. It is found that the asymmetry of the XPS C 1s line increases as the irradiation dose increases. The origin of the asymmetry appeared on the C 1s line is discussed. It is concluded that the asymmetry of the C 1s line is not correlated with the increase in the size of a graphitic layer, but is related with the structural disorders, such as a bond angle disorder.